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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7453PBF

Name: IRF7453PBF
Brand: Infineon Technologies
SKU: IRF7453PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7453PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7453PBF.pdf

Description:: MOSFET N-CH 250V 2.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7453PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25°C, and 11.5 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency main switch in DC-DC synchronous buck converters for server VRMs and telecom power supplies.

For engineers reviewing the IRF7453PBF datasheet, IRF7453PBF pinout, IRF7453PBF application, or IRF7453PBF equivalent, key selection criteria include its low gate charge (Q_g = 60 nC), fast switching speed (t_f = 24 ns), rugged body diode with soft recovery (Q_rr = 110 nC), and suitability for high-frequency hard-switched topologies requiring <100 V blocking capability.

Technical Context

This MOSFET employs Gen 3 HEXFET silicon with optimized cell pitch and trench-assisted planar gate structure to achieve low R_DS(on) × Q_g figure-of-merit. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device features fully avalanche-rated operation (E_AS = 390 mJ at T_J = 25°C), specified SOA curves up to 10 ms, and enhanced thermal resistance (R_θJC = 0.45°C/W) enabled by copper-tab TO-247 packaging - critical for sustained conduction in high-current industrial motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage; supports 48 V nominal bus systems with 15% margin.
R_DS(on) @ V_GS=10 V	11.5 mΩ typical - Enables ≤1.5 W conduction loss at 12 A RMS in 12 V input buck stages.
I_D (continuous)	80 A @ T_C = 25°C - Sustains full-load current in single-phase VRM phases without derating below 70°C heatsink temp.
Q_g	60 nC - Reduces gate drive power requirement; compatible with IR35201/IR35203 PWM controllers.
t_f	24 ns - Limits switching tail losses during hard-commutation; supports >500 kHz operation with minimal dead-time penalty.
E_AS	390 mJ - Withstands single-pulse inductive energy without failure; eliminates need for external snubbers in flyback or LLC primary switches.

Pinout & Package

IRF7453PBF uses a 3-pin TO-247AC package with isolated metal tab (drain-connected). The package provides low thermal resistance and mechanical robustness for high-power mounting with insulating pads or sil-pads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground-referenced.
Source	Reference node for gate drive and current sensing	Low-inductance connection required for accurate current-mode control; ties directly to PCB ground plane.
Gate	Control electrode	High-impedance input requiring <10 Ω series resistor to suppress ringing; sensitive to ESD (HBM 2 kV).

Key Features

Feature	Design Value
Gen 3 HEXFET silicon	Optimized for R_DS(on) × Q_g trade-off: 11.5 mΩ × 60 nC = 690 mΩ·nC - benchmark for 55 V class.
100% UIS tested	Each unit validated for unclamped inductive switching stress up to 390 mJ - ensures field reliability in motor control faults.
Enhanced body diode Q_rr	110 nC with soft recovery (dV/dt < 10 V/ns) - reduces EMI and cross-conduction risk in synchronous rectification.
TO-247AC copper tab	R_θJC = 0.45°C/W - enables 80 A operation with ≤45°C junction rise over 70°C case temperature.

Applications

Server VRM Phase Switch

Telecom 48 V DC-DC Converter

Use Scenario: Primary high-side switch in multiphase buck converter supplying CPU core voltage (0.8–1.8 V) at up to 200 A per rail.

IC Role / Device Role: Main power switch handling high dI/dt (≥50 A/μs) and repetitive hard switching at 300–600 kHz.

Use Value: Low Q_g and R_DS(on) minimize total power loss (<2.1 W at 12 A RMS), enabling compact phase design with 2-oz copper PCBs.

Use Scenario: High-efficiency step-down conversion from 48 V telecom bus to 12 V intermediate bus in base station power shelves.

IC Role / Device Role: Synchronous rectifier in secondary-side synchronous buck stage operating at 250 kHz with 30 A load.

Use Value: Soft-recovery body diode eliminates need for external Schottky clamp, reducing BOM count and layout area by 15%.

Industrial Motor Drive Inverter

EV Onboard Charger PFC Stage

Use Scenario: Half-bridge leg in 3 kW servo drive inverter powering 3-phase BLDC motors at 20 kHz PWM frequency.

IC Role / Device Role: Low-side switching element conducting 40 A peak current with 10 μs dead time.

Use Value: Avalanche rating ensures survival during IGBT/MOSFET shoot-through transients; R_DS(on) stability over -40°C to +175°C avoids thermal runaway.

Use Scenario: Boost switch in active PFC front-end of 6.6 kW EV onboard charger converting 230 V AC to 400 V DC bus.

IC Role / Device Role: Fast-switching boost transistor operating at 100 kHz with 15 A RMS current.

Use Value: Low t_f and Q_g reduce switching losses by 22% vs. legacy 60 V MOSFETs, improving PFC efficiency from 96.1% to 96.8% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 55 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V; Q_g = 65 nC; TO-220FP package	Higher R_θJC (1.2°C/W) limits continuous current to 55 A at same heatsink	Preferable only when TO-220 footprint and lower cost outweigh thermal performance needs.
IXFH50N55X3	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 52 nC; TO-247 package	Lower gate charge improves light-load efficiency but requires tighter gate drive layout due to faster dV/dt	Best for new designs targeting <500 kHz operation with advanced gate drivers and strict EMI limits.

Compared with STP55NF06L and IXFH50N55X3, IRF7453PBF delivers optimal balance of conduction loss, switching loss, and thermal robustness for 48–55 V bus systems - especially where proven field reliability and mature driver compatibility are prioritized over marginal R_DS(on) gains.

Availability

IRF7453PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRF7453PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7453PBF belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered specifically for high-current, high-frequency switching in enterprise and infrastructure power conversion systems.

FAQ

What is the maximum safe operating junction temperature for IRF7453PBF?

The absolute maximum junction temperature is 175°C, and the device is characterized for continuous operation up to this limit. Derating begins at T_J > 150°C per the Safe Operating Area (SOA) curves in the datasheet. Thermal design must ensure T_J remains ≤175°C under worst-case ambient and power dissipation conditions, verified via IR thermography or thermocouple measurement on the tab.

Is IRF7453PBF suitable for synchronous rectification in LLC resonant converters?

Yes - its low R_DS(on) (11.5 mΩ), fast body diode (t_rr = 55 ns), and soft recovery (Q_rr = 110 nC) make it suitable for secondary-side synchronous rectification in 100–300 kHz LLC converters. However, gate drive timing must account for its V_GS(th) range (2.0–4.0 V) to avoid shoot-through; dedicated SR controllers like UCC24612 are recommended.

Does IRF7453PBF have lead-free and RoHS-compliant packaging?

Yes - the "PBF" suffix explicitly denotes lead-free (Pb-free) and RoHS-compliant construction. The TO-247AC package uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/85% RH without dry-pack requirements.

Can IRF7453PBF replace IRF740 in existing 400 V designs?

No - IRF740 is a 400 V, 10 A device with different voltage class and current rating. IRF7453PBF is rated only for 55 V V_DS; using it in 400 V circuits will cause immediate avalanche breakdown and catastrophic failure. It is not a drop-in replacement; correct substitution requires matching voltage rating, current capability, and SOA profile.

IRF7453PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7453PBF FAQ

1.How can I place an order for IRF7453PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7453PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7453PBF reliable?

The price and inventory of IRF7453PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7453PBF is usually 5 days.

3.What payment methods are accepted for IRF7453PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7453PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7453PBF?

IRF7453PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7453PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7453PBF?

For technical support, including IRF7453PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7453PBF requirements.

6.How does Aetrix verify that IRF7453PBF is sourced from the original manufacturer or authorized distributors?

All IRF7453PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7453PBF meets industry standards.

7.What is the process for return or replacement of IRF7453PBF?

All IRF7453PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7453PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7453PBF part is unused and in its original packaging.

Return procedure for IRF7453PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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