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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7453TRPBF

Name: IRF7453TRPBF
Brand: Infineon Technologies
SKU: IRF7453TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7453TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7453TRPBF.pdf

Description:: MOSFET N-CH 250V 2.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7453TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 55 V V_DS, 11 A continuous drain current (T_C = 25°C), and 22 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency switching element in DC-DC converters, motor drive half-bridges, and load-switching circuits.

For engineers reviewing the IRF7453TRPBF datasheet, IRF7453TRPBF pinout, IRF7453TRPBF application, or IRF7453TRPBF equivalent, key selection criteria include its 55 V blocking voltage, low gate charge (Q_g = 19 nC), fast turn-on/turn-off times (t_on = 18 ns, t_off = 25 ns), and suitability for 100 kHz–500 kHz hard-switched topologies.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted channel geometry to achieve low R_DS(on) × Q_g figure-of-merit (FOM). Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling robust gate drive compatibility with 5 V and 3.3 V logic-level controllers.

The device features integral body diode with soft recovery characteristics (t_rr = 45 ns), rated for repetitive avalanche energy (E_AS = 110 mJ), and operates up to T_J = 175°C. Thermal resistance R_θJC is 1.7°C/W, supporting high-power density PCB layouts with minimal heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage under continuous operation; supports 48 V nominal bus systems with 15% margin.
R_DS(on) @ V_GS=10 V	22 mΩ (typ) - Enables ≤2.7 W conduction loss at 11 A, critical for thermal management in compact converters.
I_D (continuous)	11 A @ T_C = 25°C - Sustains full-rated current with standard TO-220 heatsink; derates to ~7 A at T_C = 100°C.
Q_g	19 nC - Low total gate charge reduces driver power demand and enables efficient 300–500 kHz PWM switching.
t_on/t_off	18 ns / 25 ns - Fast switching minimizes overlap loss in synchronous rectification and half-bridge configurations.
R_θJC	1.7°C/W - Allows direct mounting to aluminum heatsink; junction-to-case path dominates thermal design in TO-220AB layout.

Pinout & Package

IRF7453TRPBF uses the industry-standard TO-220AB package (3-pin, straight lead, non-isolated tab). The metal tab is electrically connected to the drain terminal and must be insulated from chassis ground unless drain is referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying output terminal	Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink.
Gate	Control input for channel conduction	High-impedance MOS gate; requires <1 μA bias current; sensitive to ESD (HBM >2 kV).
Source	Reference node for gate drive and current return	Common connection point for gate driver return path and load current return; defines local ground reference.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	0.42 Ω·nC - Optimized for high-frequency switch-mode power supplies where switching + conduction losses are co-optimized.
Repetitive avalanche rated	E_AS = 110 mJ - Supports unclamped inductive switching without external snubbers in relay drivers or solenoid controls.
Fast body diode recovery	t_rr = 45 ns - Reduces reverse-recovery-related shoot-through risk in synchronous buck and LLC resonant converters.
175°C maximum junction temperature	T_J(max) = 175°C - Enables operation in automotive engine-bay or industrial ambient environments up to 125°C with appropriate derating.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: 48 V input to 12 V/5 A output in telecom power shelf.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz PWM frequency.

Use Value: 22 mΩ R_DS(on) limits conduction loss to 1.2 W; low Q_g ensures minimal gate driver dissipation.

Use Scenario: H-bridge control of 24 V, 8 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switching element with integrated freewheeling path via body diode.

Use Value: 45 ns t_rr prevents cross-conduction during direction reversal; 110 mJ E_AS handles inductive kickback without clamping.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush-limited 48 V board insertion in modular server backplane.

IC Role / Device Role / Timing Role: Main pass transistor controlled by external current-sense amplifier and comparator.

Use Value: 55 V rating accommodates 48 V + transient overshoot; 1.7°C/W R_θJC enables precise thermal foldback.

Use Scenario: 36 V string LED driver with analog dimming in streetlight fixture.

IC Role / Device Role / Timing Role: Linear current-regulating pass element in constant-current sink configuration.

Use Value: 175°C T_J(max) supports sealed outdoor enclosure operation; low R_DS(on) minimizes dropout voltage at 1.5 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DS, 55 A I_D, 14 mΩ R_DS(on), TO-220FP package	Higher current rating but larger die size increases gate charge (Q_g = 65 nC); less suitable for high-frequency designs	Select when higher continuous current and lower R_DS(on) outweigh switching speed requirements.
IXTP50N055	55 V V_DS, 50 A I_D, 12.5 mΩ R_DS(on), TO-220 package	Lower R_DS(on) and higher I_D, but Q_g = 42 nC and slower t_on/t_off (35 ns/50 ns)	Prefer for high-current, low-frequency (<100 kHz) linear or switching applications where conduction loss dominates.

Compared with STP55NF06L and IXTP50N055, IRF7453TRPBF offers superior high-frequency efficiency due to its balanced R_DS(on) × Q_g FOM and faster switching, making it optimal for compact 300–500 kHz DC-DC and motor drive designs where thermal and layout space are constrained.

Availability

IRF7453TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drives, hot-swap controllers, and LED constant-current drivers requiring stable component supply and long-term industrial availability.

Supply support for IRF7453TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and wide-bandgap solutions.

The HEXFET® product line delivers high-performance discrete power MOSFETs optimized for efficiency, reliability, and thermal performance in industrial, computing, and consumer power conversion systems.

FAQ

Is IRF7453TRPBF logic-level compatible?

No, IRF7453TRPBF is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) is specified from 2.0 V to 4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). It is designed for standard 10 V gate drive, not 3.3 V or 5 V microcontroller outputs without level-shifting or gate boosting.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA is limited by both thermal and avalanche constraints. For DC operation, maximum drain current drops to approximately 7 A at V_DS = 10 V, and to 3.5 A at V_DS = 40 V. Pulse operation (≤10 ms) extends current capability per the published SOA curve in the Infineon datasheet.

Can IRF7453TRPBF be used in parallel configurations?

Yes, IRF7453TRPBF supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. However, matched gate resistors (≤10 Ω each) and symmetrical PCB layout (equal trace length/impedance) are mandatory to prevent oscillation and ensure thermal balance across devices.

Does the TO-220AB package provide electrical isolation between tab and leads?

No, the TO-220AB package has a non-isolated tab: the drain terminal is directly connected to the metal mounting surface. Electrical isolation requires a mica or polymer insulator washer and isolated mounting hardware. Use only with appropriate creepage/clearance spacing if drain is not at chassis ground potential.

IRF7453TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7453TRPBF FAQ

1.How can I place an order for IRF7453TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7453TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7453TRPBF reliable?

The price and inventory of IRF7453TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7453TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7453TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7453TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7453TRPBF?

IRF7453TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7453TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7453TRPBF?

For technical support, including IRF7453TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7453TRPBF requirements.

6.How does Aetrix verify that IRF7453TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7453TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7453TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7453TRPBF?

All IRF7453TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7453TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7453TRPBF part is unused and in its original packaging.

Return procedure for IRF7453TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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