Infineon Technologies IRF7455
- Part No.:
- IRF7455
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7455.pdf
- Description:
- MOSFET N-CH 30V 15A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:5,672
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Product details
Overview
IRF7455 from Infineon Technologies (formerly International Rectifier) is a 30V, 15A logic-level N-channel HEXFET® Power MOSFET in SO-8 package, optimized for synchronous rectification in telecom 48V input DC-DC converters. It delivers RDS(on) = 7.5 mΩ at VGS = 10V and 9 mΩ at VGS = 4.5V, with ultra-low gate charge (Qg = 37–56 nC) and fast switching (tr = 18 ns, tf = 44 ns).
For engineers reviewing the IRF7455 datasheet, IRF7455 pinout, IRF7455 application, or IRF7455 equivalent, key selection criteria include its 4.5V logic-level gate drive compatibility, 120A pulsed drain current capability, avalanche-rated ruggedness (EAS = 200 mJ), and thermal performance on standard PCBs (RθJA = 50°C/W).
Technical Context
The IRF7455 is engineered for high-frequency synchronous buck and flyback topologies where low conduction and switching losses are critical. Its low RDS(on) at 4.5V enables direct drive from PWM controllers without level-shifting, while its 100 pF Crss and 3480 pF Ciss support clean turn-on/turn-off transitions under 6.0 Ω gate resistance.
It integrates a fully characterized body diode with trr = 64–96 ns and Qrr = 99–150 nC, enabling efficient reverse recovery in hard-switched synchronous rectifiers. The device is qualified for operation from –55°C to +150°C and supports unclamped inductive switching up to IAS = 15A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24–48V telecom input rails |
| RDS(on) @ VGS = 4.5V | 6.9–9.0 mΩ - Enables efficient synchronous rectification with 3.3V/5V logic-level drivers |
| ID @ TA = 25°C | 15 A - Continuous conduction capability for mid-power SMPS stages |
| Qg | 37–56 nC - Low total gate charge reduces driver power loss and speeds switching |
| tr/tf | 18 ns / 44 ns - Fast edge rates minimize overlap loss in synchronous rectifier FETs |
| EAS | 200 mJ - Single-pulse avalanche energy rating ensures robustness during transient overloads |
| RθJA | 50 °C/W - Thermal resistance on 1-inch² copper board defines safe continuous power derating |
Pinout & Package
IRF7455 uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal and current handling. The package measures 4.98 mm × 6.20 mm × 1.75 mm and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Parallel-connected high-current output path; tied to PCB copper pour for thermal dissipation |
| 5 | Gate (G) | Control terminal requiring <±12 V rating; low input capacitance enables fast switching |
| Source (S) | Source (S) | Reference node for gate drive and current sensing; pins 5 and 8 are internally connected as source terminals |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5V | Enables direct interface with 3.3V/5V PWM controllers-no gate driver IC required |
| Low Qgd/Qgs ratio | Miller charge of 13–20 nC minimizes risk of false turn-on during high dv/dt events |
| Characterized body diode | Reverse recovery parameters (trr, Qrr) specified for synchronous rectifier timing design |
| Avalanche-rated | Guaranteed single-pulse energy handling (200 mJ) improves system reliability in inductive load faults |
Applications
| Telecom 48V DC-DC Converters | Server VRM Synchronous Rectifiers |
|---|---|
Use Scenario: Primary-side synchronous rectification in isolated 48V-to-12V telecom power supplies operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET replacing Schottky diodes to reduce conduction loss and improve efficiency above 90%. Use Value: 7.5 mΩ RDS(on) at 10V cuts conduction loss by >50% vs. typical 40V Schottky, directly improving full-load efficiency. | Use Scenario: Secondary-side synchronous rectification in multiphase server VRMs delivering 50–100A at 1.0–1.8V to CPUs/GPUs. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch in parallel configurations with precise gate timing control. Use Value: 120A pulsed current rating and 100 pF Crss allow tight dead-time control and minimal shoot-through risk. |
| Industrial PoE++ PSE Controllers | Automotive DC-DC Modules (12V/24V) |
Use Scenario: High-efficiency 90W PoE++ (IEEE 802.3bt Type 4) power sourcing equipment with active rectification. IC Role / Device Role / Timing Role: Logic-level controlled switch in secondary-side synchronous rectifier stage of isolated flyback or forward converter. Use Value: 4.5V gate threshold and 9 mΩ RDS(on) enable stable operation with PoE controller gate outputs, reducing heat rise in compact modules. | Use Scenario: 12V-to-5V/3.3V step-down conversion in automotive infotainment and ADAS ECUs with strict thermal constraints. IC Role / Device Role / Timing Role: Main power switch in high-frequency buck regulator operating across –40°C to +125°C ambient. Use Value: Specified RDS(on) drift (0.029 V/°C) and 150°C max junction temperature ensure predictable performance over full automotive temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP | RDS(on) = 5.8 mΩ @ 10V; higher Qg = 62 nC; SO-8 with enhanced thermal pad | Better conduction loss but slower switching due to higher gate charge | Prefer when thermal margin is tight and switching frequency ≤ 300 kHz |
| DMN3025LSD | RDS(on) = 2.5 mΩ @ 10V; VGS(th) = 1.0–2.5V; tighter gate threshold distribution | Lower RDS(on) but less rugged avalanche rating (EAS = 85 mJ) | Prefer for high-current, low-voltage rails where avalanche stress is minimal |
Compared with Si7852DP and DMN3025LSD, the IRF7455 offers balanced trade-offs: moderate RDS(on), low Qg, and industry-leading EAS-making it optimal for telecom and industrial SMPS where reliability under transient overload is critical.
Availability
IRF7455 is available at Aetrix Electronics and suitable for telecom 48V DC-DC converters, server VRM synchronous rectifiers, and industrial PoE++ PSE controllers requiring stable component supply and long-term lifecycle support.
Supply support for IRF7455 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with emphasis on energy efficiency and system reliability.
The IRF7455 belongs to Infineon's HEXFET® logic-level MOSFET product line, designed specifically for high-frequency, high-efficiency DC-DC conversion in telecom, computing, and industrial power systems.
FAQ
What is the maximum gate-source voltage rating for IRF7455?
The absolute maximum VGS rating is ±12 V. Exceeding this value risks permanent gate oxide damage. For reliable operation, gate drive should be clamped within –10 V to +10 V, especially during fast switching transients where ringing may occur. The device's gate threshold voltage (0.6–2.0 V) ensures turn-on with standard 3.3V or 5V logic signals.
Can IRF7455 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (0.029 V/°C) enables inherent current sharing when multiple devices are paralleled. However, matched gate drive layout (equal trace length/impedance) and symmetrical thermal mounting are essential to prevent thermal runaway. Derate total current by 15% per additional device beyond two.
Does IRF7455 have a specified reverse recovery time for its body diode?
Yes-trr is specified as 64–96 ns at TJ = 25°C, IF = 2.5A, and di/dt = 100 A/µs. This parameter is fully characterized and supports timing analysis for synchronous rectifier dead-time optimization. Qrr is also specified (99–150 nC), enabling accurate loss estimation in hard-switched topologies.
Is IRF7455 suitable for automotive applications?
While not AEC-Q101 qualified, the IRF7455 operates across –55°C to +150°C junction temperature and meets key automotive thermal and avalanche requirements. It has been widely deployed in non-safety-critical automotive DC-DC modules (e.g., infotainment, lighting). For ASIL-B/C systems, AEC-Q101-qualified alternatives like IPB120N04S4-H0 are recommended.
IRF7455 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7455 FAQ
1.How can I place an order for IRF7455 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7455 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7455 reliable?
The price and inventory of IRF7455 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7455 is usually 5 days.
3.What payment methods are accepted for IRF7455?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7455 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7455?
IRF7455 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7455 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7455?
For technical support, including IRF7455 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7455 requirements.
6.How does Aetrix verify that IRF7455 is sourced from the original manufacturer or authorized distributors?
All IRF7455 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7455 meets industry standards.
7.What is the process for return or replacement of IRF7455?
All IRF7455 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7455, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7455 part is unused and in its original packaging.
Return procedure for IRF7455:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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