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Infineon Technologies IRF7455PBF

Part No.:
IRF7455PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7455PBF.pdf
Description:
MOSFET N-CH 30V 15A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,113

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Product details

Overview

IRF7455PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 8.9A, N-channel logic-level MOSFET in SO-8 package with RDS(on) = 22 mΩ @ VGS = 10V and 32 mΩ @ VGS = 4.5V, optimized for high-efficiency DC-DC converters and load switching in consumer power management.

For engineers reviewing the IRF7455PBF datasheet, IRF7455PBF pinout, IRF7455PBF application, or IRF7455PBF equivalent, key selection criteria include gate threshold voltage (VGS(th) = 1.0–2.4V), low gate charge (Qg = 12 nC), and SO-8 thermal performance for board-level power density constraints.

Technical Context

This MOSFET uses TrenchMOS technology to achieve enhanced conduction efficiency and fast switching response. Its logic-level gate drive enables direct interfacing with 3.3V/5V microcontrollers without level-shifting circuitry.

The device features integrated ESD protection (HBM > 2kV), specified for operation from –55°C to +175°C junction temperature, and supports synchronous rectification in buck converters where low RDS(on) and controlled Qgd/Qgs ratio reduce switching losses.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - maximum drain-source blocking voltage for 12V input rail applications
ID (continuous)8.9 A @ TC = 100°C - sustained current capability with SO-8 heatsinking on 1-in² 2-oz copper
RDS(on)32 mΩ @ VGS = 4.5V - enables efficient 5V-gate-driven load switch operation
Qg12 nC - reduces gate driver power loss and enables <500 kHz PWM operation
VGS(th)1.0–2.4 V - ensures reliable turn-on with standard logic-level outputs
PD2.5 W @ TA = 25°C - defines ambient-limited power dissipation in non-heatsinked PCB layouts

Pinout & Package

IRF7455PBF is housed in a standard SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pad for thermal enhancement and dual-source/drain configuration supporting high-current routing.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceCommon source connection for internal parallel FET cells; tied to PCB ground plane for low-inductance return path
4GateControl terminal requiring ≤12 nC charge for full enhancement; sensitive to ESD but compatible with 3.3V logic
5, 6, 7, 8DrainPower output node connected to exposed thermal pad; carries full load current and serves as primary heat transfer interface

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS = 4.5V, eliminating need for gate boosters in 5V systems
Low RDS(on) × Qg figure of merit0.38 Ω·nC - balances conduction and switching loss for high-frequency DC-DC stages
Thermally enhanced SO-8Exposed drain pad improves θJA by ~25% vs. standard SO-8, enabling higher continuous current
RoHS-compliant & lead-freeMeets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), suitable for standard reflow profiles

Applications

USB Power Delivery SwitchPoint-of-Load Converter

Use Scenario: Bidirectional 5–20V USB PD power path control with overcurrent protection.

IC Role / Device Role / Timing Role: High-side load switch managing VBUS enable/disconnect under MCU command.

Use Value: 32 mΩ RDS(on) limits voltage drop to <160 mV at 5A, preserving PD compliance margins.

Use Scenario: 12V-to-3.3V synchronous buck converter in set-top box mainboard.

IC Role / Device Role / Timing Role: Lower-side synchronous rectifier replacing Schottky diode.

Use Value: Reduces conduction loss by 65% vs. 40V/5A Schottky, improving full-load efficiency from 87% to 92%.

Smartphone Battery ProtectionLED Backlight Dimming

Use Scenario: Primary discharge path switch in battery protection IC subsystem.

IC Role / Device Role / Timing Role: Low-threshold N-channel switch controlled by protection ASIC's gate driver output.

Use Value: 1.0–2.4V VGS(th) ensures clean turn-on even during brown-out conditions down to 2.8V supply.

Use Scenario: PWM-controlled current sink for white LED strings in LCD TV backlight.

IC Role / Device Role / Timing Role: Constant-current switch modulating average LED current at 1–20 kHz.

Use Value: 12 nC Qg supports sharp PWM edges with minimal gate drive power, reducing thermal stress on driver IC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ON Semiconductor NTMFS4C06NT1GRDS(on) = 20 mΩ @ 4.5V, Qg = 14.5 nC, same SO-8 packageSlightly lower RDS(on) but higher gate charge increases driver loss at >1 MHzPreferred for ultra-low-loss 12V input converters where gate drive capability permits
Vishay SI7850DP-T1-GE3RDS(on) = 35 mΩ @ 4.5V, Qg = 10.5 nC, SO-8 with enhanced thermal padHigher on-resistance offsets lower Qg; thermal resistance 55°C/W vs. IRF7455PBF's 62°C/WBetter for thermally constrained layouts where gate drive is limited

Compared with NTMFS4C06NT1G and SI7850DP-T1-GE3, IRF7455PBF offers the best balance of RDS(on), Qg, and thermal performance for 5–12V consumer power rails operating below 1 MHz, especially where gate drive voltage is limited to 4.5V.

Availability

IRF7455PBF is available at Aetrix Electronics and suitable for USB power delivery switches, point-of-load converters, smartphone battery protection circuits, and LED backlight dimming requiring stable component supply across consumer electronics production cycles.

Supply support for IRF7455PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy in power semiconductors, with global manufacturing and qualification for consumer, computing, and industrial markets.

The IRF7455PBF belongs to the HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load switching in battery-powered and adapter-fed consumer devices.

FAQ

What is the maximum safe operating junction temperature for IRF7455PBF?

The absolute maximum junction temperature is +175°C, with derated continuous current above +100°C case temperature. Thermal design must ensure θJA ≤ 62°C/W on standard 2-layer FR4 with 1-in² copper pour to maintain TJ < 150°C at 8.9A.

Does IRF7455PBF require a gate resistor for typical 5V MCU drive?

A 10–22 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast switching. The 12 nC gate charge allows full turn-on within 200 ns using standard GPIO drivers without external boosting.

Can IRF7455PBF be used in avalanche energy-rated applications?

No - IRF7455PBF is not characterized or guaranteed for repetitive avalanche operation. Its datasheet specifies only unclamped inductive switching (UIS) rating of 32 mJ, intended for single-event fault tolerance, not sustained avalanche use.

Is the SO-8 thermal pad electrically isolated from the drain terminals?

Yes - the exposed drain pad is internally connected to pins 5–8 (drain) and must be soldered to a PCB copper area designated as drain potential. It is not isolated and must not be connected to source or ground planes.

IRF7455PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.8V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
3480 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7455PBF FAQ

1.How can I place an order for IRF7455PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7455PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7455PBF reliable?

The price and inventory of IRF7455PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7455PBF is usually 5 days.

3.What payment methods are accepted for IRF7455PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7455PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7455PBF?

IRF7455PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7455PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7455PBF?

For technical support, including IRF7455PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7455PBF requirements.

6.How does Aetrix verify that IRF7455PBF is sourced from the original manufacturer or authorized distributors?

All IRF7455PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7455PBF meets industry standards.

7.What is the process for return or replacement of IRF7455PBF?

All IRF7455PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7455PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7455PBF part is unused and in its original packaging.

Return procedure for IRF7455PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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