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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7456PBF

Name: IRF7456PBF
Brand: Infineon Technologies
SKU: IRF7456PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7456PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7456PBF.pdf

Description:: MOSFET N-CH 20V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7456PBF from Infineon Technologies is a logic-level N-channel MOSFET optimized for synchronous rectification in high-frequency DC-DC converters, featuring 20 V V_DS, 6.5 mΩ R_DS(on) at 4.5 V V_GS, 16 A continuous drain current, and SO-8 package. It enables efficient 48 V telecom input converters with low gate charge (41 nC typical) and fast switching (t_r = 25 ns).

For engineers reviewing the IRF7456PBF datasheet, IRF7456PBF pinout, IRF7456PBF application, or IRF7456PBF equivalent, key selection criteria include R_DS(on) at 4.5 V, diode reverse recovery performance (Q_rr = 74–110 nC), avalanche energy rating (E_AS = 250 mJ), thermal resistance (R_θJA = 50 °C/W), and SO-8 lead-free compliance.

Technical Context

This MOSFET employs a trench-gate HEXFET structure to achieve ultra-low on-resistance with logic-level gate drive compatibility down to 2.8 V. Its body diode is fully characterized for reverse recovery (t_rr = 48–72 ns, Q_rr = 74–110 nC), enabling reliable synchronous rectification without external Schottky replacement in compact 48 V input topologies.

The device supports repetitive avalanche operation (I_AR = 16 A, E_AR = 0.25 mJ) and features tightly specified gate threshold (V_GS(th) = 0.6–2.0 V) and transconductance (g_fs = 44 S typical), ensuring stable turn-on behavior across temperature and manufacturing variation in SMPS feedback loops.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12 V/24 V/48 V intermediate bus DC-DC stages
R_DS(on) @ 4.5 V	6.5 mΩ max - Enables <1 W conduction loss at 13 A in 48 V→12 V synchronous buck
Q_g	41–62 nC - Low total gate charge reduces driver power and enables >1 MHz switching
t_r/t_f	25 ns / 52 ns - Fast edge rates minimize overlap loss in synchronous rectifier FETs
E_AS	250 mJ - Single-pulse avalanche robustness supports unclamped inductive turn-off stress
R_θJA	50 °C/W - Thermal limit of 2.5 W P_D at 25 °C ambient with standard SO-8 PCB layout
Q_rr	74–110 nC - Quantified body diode recovery charge critical for ZVS/ZCS soft-switching design

Pinout & Package

IRF7456PBF is housed in a standard SO-8 surface-mount package with exposed drain pads for enhanced thermal performance. The package conforms to EIA-481 and EIA-541 tape-and-reel standards and is lead-free (PbF) compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 7, 8	Drain (D)	Parallel-connected internal drain terminals - tied to PCB power plane for low-inductance, high-current path
5	Gate (G)	Control terminal - requires <62 nC charge to fully enhance; sensitive to ESD (±12 V rating)
6	Source (S)	Reference node for gate drive and current sensing - common return for synchronous rectifier output

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on) ≤ 7.5 mΩ at V_GS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V controller designs
Low Q_gd/Q_gs ratio	18–27 nC / 9.7–15 nC - reduces Miller effect, improving noise immunity during hard switching
Fully characterized body diode	t_rr = 48–72 ns, Q_rr = 74–110 nC - enables accurate dead-time optimization in synchronous rectifiers
Avalanche-rated	E_AS = 250 mJ, I_AR = 16 A - withstands transient overvoltage events without derating in telecom power supplies
Thermal stability	R_DS(on) tempco = +0.024 V/°C - predictable on-resistance rise ensures consistent current sharing in parallel configurations

Applications

Telecom 48 V Input Buck Converters

USB PD 28 V Output Synchronous Rectifiers

Use Scenario: Step-down conversion from 48 V telecom rectified bus to 12 V intermediate rail in base station power modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET, driven by dedicated gate controller with adaptive dead-time control.

Use Value: 6.5 mΩ R_DS(on) at 4.5 V enables >95% efficiency at 10 A load while eliminating external Schottky diode heat sink.

Use Scenario: Secondary-side synchronous rectification in USB Power Delivery 28 V output adapters supporting 100 W delivery.

IC Role / Device Role / Timing Role: High-speed switching FET replacing body diode conduction during light-load burst-mode operation.

Use Value: 41 nC Q_g and 25 ns t_r allow clean zero-voltage switching transitions up to 600 kHz, reducing no-load power below 30 mW.

Industrial PLC 24 V DC-DC Supplies

Automotive ADAS Camera Power Modules

Use Scenario: Isolated 24 V input-to-5 V output flyback converter powering I/O modules in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side active clamp switch or secondary-side rectifier in quasi-resonant topology.

Use Value: 250 mJ E_AS rating ensures reliability under line surge conditions per IEC 61000-4-5 Level 3 testing.

Use Scenario: Compact 12 V→3.3 V point-of-load regulator supplying image sensor and ISP in automotive surround-view cameras.

IC Role / Device Role / Timing Role: Synchronous buck high-side or low-side switch operating in forced PWM mode for low-noise output.

Use Value: SO-8 package with exposed drain allows direct thermal coupling to copper pour, maintaining T_J < 125 °C at 5 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 5.8 mΩ @ 4.5 V; Q_g = 33 nC; V_DS = 20 V	Lower gate charge improves high-frequency efficiency but reduced avalanche rating (E_AS = 120 mJ)	Preferred for >1 MHz fixed-frequency designs where avalanche stress is minimal
DMN2020LFG-7	R_DS(on) = 7.2 mΩ @ 4.5 V; Q_g = 45 nC; V_DS = 20 V; rated for automotive AEC-Q101	Higher R_DS(on) increases conduction loss but qualified for extended temperature and vibration	Required for automotive ADAS applications requiring AEC-Q101 qualification and -40°C to +125°C operation

Compared with Si7157DP-T1-GE3 and DMN2020LFG-7, IRF7456PBF offers balanced trade-offs: higher avalanche robustness than the Vishay part and lower on-resistance than the Diodes Inc. AEC-Q101 option-making it optimal for industrial telecom power where reliability and efficiency are both critical.

Availability

IRF7456PBF is available at Aetrix Electronics and suitable for telecom 48 V input converters, USB PD 28 V output adapters, and industrial PLC 24 V DC-DC supplies requiring stable component supply and full traceability.

Supply support for IRF7456PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRF7456PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-density synchronous rectification in telecom and industrial DC-DC converters operating below 20 V.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7456PBF supports 13 A continuous drain current at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes standard SO-8 mounting on FR-4 with 1-inch² copper and accounts for thermal derating (0.02 W/°C) beyond 25°C ambient.

Does IRF7456PBF have a specified reverse recovery time for its body diode?

Yes - the body diode reverse recovery time (t_rr) is specified as 48–72 ns at T_J = 25°C, I_F = 2.5 A, and di/dt = 100 A/µs. This parameter is fully characterized and published in the Diode Characteristics section of the datasheet, enabling precise dead-time calculation in synchronous rectifier designs.

Can IRF7456PBF be used in avalanche mode repeatedly?

No - while the device is rated for single-pulse avalanche energy (E_AS = 250 mJ), its repetitive avalanche energy (E_AR) is only 0.25 mJ. Repeated avalanche operation exceeds safe operating limits and risks cumulative junction damage; it must be avoided in normal operation and protected against via circuit design.

Is the SO-8 package thermally enhanced?

Yes - the SO-8 package uses an exposed drain paddle that serves as the primary thermal path. When soldered to a large copper area on the PCB, it achieves R_θJA = 50 °C/W. The datasheet confirms this value applies to standard 1-inch² copper board mounting, and thermal performance improves further with multi-layer thermal vias under the drain pad.

IRF7456PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3640 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7456PBF FAQ

1.How can I place an order for IRF7456PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7456PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7456PBF reliable?

The price and inventory of IRF7456PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7456PBF is usually 5 days.

3.What payment methods are accepted for IRF7456PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7456PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7456PBF?

IRF7456PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7456PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7456PBF?

For technical support, including IRF7456PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7456PBF requirements.

6.How does Aetrix verify that IRF7456PBF is sourced from the original manufacturer or authorized distributors?

All IRF7456PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7456PBF meets industry standards.

7.What is the process for return or replacement of IRF7456PBF?

All IRF7456PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7456PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7456PBF part is unused and in its original packaging.

Return procedure for IRF7456PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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