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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7457

Name: IRF7457
Brand: Infineon Technologies
SKU: IRF7457
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7457

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7457.pdf

Description:: MOSFET N-CH 20V 15A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:8,538

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Product details

Overview

IRF7457PbF from Infineon Technologies (formerly International Rectifier) is a 20 V, 15 A N-channel SO-8 packaged MOSFET optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and processor power. It features 7.0 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 28–42 nC), and fully characterized avalanche capability (E_AS = 265 mJ).

For engineers reviewing the IRF7457PbF datasheet, IRF7457PbF pinout, IRF7457PbF application, or IRF7457PbF equivalent, key selection criteria include its low R_DS(on) at 4.5 V (≤10.5 mΩ), fast switching (t_r = 16 ns, t_f = 7.5 ns), robust body diode (Q_rr = 70–110 nC), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This HEXFET Power MOSFET uses planar V-groove technology to achieve stable threshold voltage (V_GS(th) = 1.0–3.0 V) and low on-resistance temperature coefficient (0.023 V/°C). Its gate structure delivers very low input capacitance (C_iss = 3100 pF) and minimized reverse transfer capacitance (C_rss = 270 pF), enabling clean turn-on/turn-off in hard-switched topologies.

The device integrates a co-packaged, low-Q_rr body diode with V_SD = 0.67–0.8 V at 12 A and T_J = 125°C, supporting efficient synchronous rectification without external Schottky diodes. Avalanche rating (I_AR = 15 A, E_AS = 265 mJ) allows unclamped inductive switching in flyback or forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) @ V_GS = 10 V	7.0 mΩ - Enables ≤15 A continuous conduction with <0.8 W conduction loss at 25°C
Q_g	28–42 nC - Low gate drive energy supports >1 MHz operation with minimal driver loss
C_rss	270 pF - Reduces Miller-induced shoot-through risk in half-bridge configurations
E_AS	265 mJ - Supports single-pulse unclamped inductive switching up to 12 A peak
R_θJA	50 °C/W - Limits junction rise to ~125°C at 1.6 W dissipation on standard FR4 PCB
V_GS(th)	1.0–3.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers

Pinout & Package

IRF7457PbF is housed in a standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed drain paddle for enhanced thermal performance. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and is RoHS-compliant and lead-free (PbF).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain Connection	All pins 1–7 and pin 8 are internally connected to the drain terminal; used for high-current output path and thermal sinking via exposed pad
Pin 8 (Source)	Source Terminal	Pin 8 is the dedicated source connection - not shared with drain - enabling Kelvin source sensing in precision gate drive layouts
Pin 3 (Gate)	Control Input	Single gate input with low impedance (typ. 1.8 Ω gate resistance recommended); isolated from power paths for noise immunity

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	≤10.5 mΩ - Enables direct drive from 5 V microcontrollers or PWM controllers without level-shifting
Fully characterized avalanche	E_AS = 265 mJ, I_AR = 15 A - Eliminates need for external snubbers in flyback or resonant converters
Low Q_rr body diode	70–110 nC - Reduces switching loss and EMI during reverse recovery in synchronous rectifiers
Thermally enhanced SO-8	R_θJL = 20 °C/W - Allows >2.5 W power dissipation when mounted on copper pour or heatsinked PCB

Applications

Telecom DC-DC Converters

Server CPU VRMs

Use Scenario: High-efficiency 48 V to 12 V isolated DC-DC converters in telecom power shelves using active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes on secondary side; switched at 300–500 kHz.

Use Value: 7.0 mΩ R_DS(on) reduces conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency by 1.2–1.8%.

Use Scenario: Multiphase buck converters delivering 100+ A to modern x86 processors in cloud servers.

IC Role / Device Role / Timing Role: High-side or low-side switch in 300–1000 kHz multiphase VRM; driven by integrated gate driver ICs.

Use Value: Low Q_g (28–42 nC) and C_rss (270 pF) minimize gate drive loss and enable precise phase interleaving.

Industrial PoE PSE

USB-C PD Adapters

Use Scenario: 802.3bt Type 4 (90 W) Power Sourcing Equipment with active DC-DC stage and hot-swap FET control.

IC Role / Device Role / Timing Role: Primary-side switch in 600 kHz flyback converter; subjected to repetitive unclamped inductive stress.

Use Value: Rated E_AS = 265 mJ ensures reliable operation under line transients without external clamping.

Use Scenario: Compact 65 W USB-C Power Delivery adapters using QR flyback with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at variable frequency up to 130 kHz.

Use Value: Low V_SD (0.67 V @ 125°C) and Q_rr (74 nC) reduce reverse recovery loss and improve light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 31 nC; SO-8; V_DS = 20 V	Slightly lower R_DS(on), but higher C_iss (3500 pF) and no published avalanche rating	Preferred where conduction loss dominates and avalanche stress is absent
DMN2020LSD	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 22 nC; SO-8; V_DS = 20 V; logic-level only (V_GS(th) = 0.5–1.2 V)	Lower gate charge enables faster switching, but higher R_DS(on) increases conduction loss at high current	Better for 3.3 V gate drive systems where speed outweighs resistive loss

Compared with Si7157DP and DMN2020LSD, IRF7457PbF offers the best balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness-critical for industrial and telecom designs subject to line surges and inductive kickback.

Availability

IRF7457PbF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU VRMs, and industrial PoE PSE applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7457PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF7457PbF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained telecom and computing infrastructure.

FAQ

Is IRF7457PbF suitable for 3.3 V gate drive?

Yes. With a gate threshold voltage range of 1.0–3.0 V and R_DS(on) ≤10.5 mΩ at V_GS = 4.5 V, IRF7457PbF achieves usable on-resistance under 3.3 V logic drive-though full 7.0 mΩ performance requires ≥10 V. Designers should verify gate drive strength and layout parasitics for stable switching.

What is the maximum continuous drain current at 70°C ambient?

The datasheet specifies 12 A continuous drain current at T_A = 70°C with V_GS = 10 V. This assumes standard SO-8 mounting on FR4 with 1 in² copper area. Derating follows linear factor of 0.02 W/°C above 70°C ambient, limiting usable current further under high board temperatures.

Does IRF7457PbF have an integrated Schottky diode?

No. It features a co-packaged, optimized body diode formed by the MOSFET's inherent p-n junction. This diode has low V_SD (0.67–0.8 V) and controlled Q_rr (70–110 nC), but it is not a discrete Schottky. For ultra-low V_F or zero-recovery applications, external Schottky or GaN devices may be preferred.

Can IRF7457PbF replace IRF7413 in existing designs?

Not directly. While both are SO-8 N-channel MOSFETs, IRF7413 has V_DS = 30 V and R_DS(on) = 12 mΩ @ 10 V. IRF7457PbF offers lower R_DS(on) (7.0 mΩ) but reduced voltage rating (20 V). Replacement is viable only if system max V_DS stays below 16 V with margin and gate drive remains compatible.

IRF7457 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7457 FAQ

1.How can I place an order for IRF7457 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7457 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7457 reliable?

The price and inventory of IRF7457 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7457 is usually 5 days.

3.What payment methods are accepted for IRF7457?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7457 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7457?

IRF7457 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7457 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7457?

For technical support, including IRF7457 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7457 requirements.

6.How does Aetrix verify that IRF7457 is sourced from the original manufacturer or authorized distributors?

All IRF7457 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7457 meets industry standards.

7.What is the process for return or replacement of IRF7457?

All IRF7457 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7457, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7457 part is unused and in its original packaging.

Return procedure for IRF7457:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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