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Infineon Technologies IRF7457PBF
- Part No.:
- IRF7457PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7457PBF.pdf
- Description:
- MOSFET N-CH 20V 15A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,858
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Product details
Overview
IRF7457PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 15 A, 7.0 mΩ N-channel HEXFET Power MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and processor power. It features ultra-low RDS(on), fully characterized avalanche capability (265 mJ), and low gate charge (28–42 nC).
For engineers reviewing the IRF7457PBF datasheet, IRF7457PBF pinout, IRF7457PBF application, or IRF7457PBF equivalent, key selection criteria include its 7.0 mΩ on-resistance at VGS = 10 V, 12 A continuous current at 70°C, 15 A pulsed rating, and SO-8 thermal performance (RθJA = 50 °C/W).
Technical Context
This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low conduction loss while maintaining fast switching. Its gate threshold voltage (1.0–3.0 V) and low input capacitance (Ciss = 3100 pF) support robust 4.5 V logic-level drive in high-efficiency synchronous rectifiers.
The device integrates a co-packaged body diode with low reverse recovery charge (Qrr = 70–110 nC) and fast trr (50–75 ns), enabling efficient operation in hard-switched topologies without external Schottky supplementation. Avalanche ruggedness (EAS = 265 mJ) ensures reliability under inductive load transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin |
| RDS(on) max | 7.0 mΩ @ VGS = 10 V - Enables <15 mW conduction loss at 12 A in 12 V→1.2 V buck stages |
| ID continuous | 15 A @ TA = 25°C - Supports high-current output stages in server VRMs and telecom PSUs |
| Qg | 28–42 nC - Low gate drive energy reduces controller loading and switching losses at >500 kHz |
| Coss | 1600 pF @ VDS = 10 V - Minimizes turn-off energy and improves zero-voltage switching compatibility |
| EAS | 265 mJ - Withstands single-pulse inductive energy surges in unclamped flyback or LLC resonant circuits |
| trr / Qrr | 50–75 ns / 70–110 nC - Reduces body-diode conduction loss and EMI in synchronous rectifier applications |
Pinout & Package
IRF7457PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 (D) | Drain | Parallel-connected high-current output path; electrically tied to exposed copper pad for thermal and electrical sinking |
| 5 (G) | Gate | Control terminal requiring ≤20 V drive; low 270 pF Crss minimizes Miller effect during switching |
| 7–8 (S) | Source | Reference node for gate drive and current sensing; shared with body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 7.0 mΩ at 10 V gate drive enables <100 mW total conduction loss in 12 A, 12 V→1.8 V converter stage |
| Low gate charge | 28–42 nC total charge allows clean 500 kHz+ switching with standard gate drivers (e.g., IR2110, UCC27531) |
| Enhanced body diode | Qrr = 70–110 nC and trr = 50–75 ns reduce reverse recovery loss and EMI in synchronous rectifier mode |
| Avalanche-rated | 265 mJ single-pulse EAS supports reliable operation in unclamped inductive switching without snubbers |
Applications
| Telecom DC-DC Converters | Server Processor VRMs |
|---|---|
Use Scenario: High-frequency isolated forward or active-clamp forward converters delivering 48 V to 12 V/5 V intermediate bus in telecom rectifiers. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes on secondary side to improve efficiency above 92%. Use Value: 7.0 mΩ RDS(on) cuts conduction loss by >65% vs. 40 V Schottky, directly increasing full-load efficiency by 1.2–1.8%. | Use Scenario: Multiphase buck converters supplying 1.0–1.8 V at up to 200 A to modern x86 or ARM processors in data center servers. IC Role / Device Role / Timing Role: High-side or low-side switch in 500–1000 kHz multiphase topology with integrated driver feedback. Use Value: Low Qg (28–42 nC) and Ciss (3100 pF) enable precise phase alignment and minimize dead-time losses across 4–8 phases. |
| Industrial SMPS | Point-of-Load Regulators |
Use Scenario: 24 V input industrial power supplies powering PLC I/O modules, motor drivers, and fieldbus interfaces. IC Role / Device Role / Timing Role: Primary-side switch in 200–400 kHz flyback or forward converters with tight thermal constraints. Use Value: 265 mJ EAS withstands transformer leakage inductance spikes without derating, eliminating need for external clamping. | Use Scenario: Compact 12 V→3.3 V or 5 V point-of-load modules mounted directly on FPGA or ASIC carrier boards. IC Role / Device Role / Timing Role: Final-stage synchronous rectifier MOSFET operating at >1 MHz with minimal footprint and thermal resistance. Use Value: SO-8 package with exposed drain provides 20 °C/W junction-to-pad thermal path, enabling 12 A continuous operation on 1-in² copper area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP | RDS(on) = 6.2 mΩ @ 10 V; Qg = 45 nC; SO-8 with enhanced thermal pad | Higher gate charge increases driver loss at >1 MHz; superior thermal resistance (RθJA = 40 °C/W) | Preferred for thermally constrained PoL designs where gate drive loss is secondary to junction temperature rise |
| IPB120N04S4-02 | RDS(on) = 2.0 mΩ @ 10 V; VDS = 40 V; TO-263 package; higher capacitance (Ciss = 4500 pF) | Over-specified voltage rating adds cost and size; unsuitable for space-constrained SO-8 layouts | Only suitable when 40 V blocking and >20 A current are required-otherwise introduces unnecessary layout overhead |
Compared with SiR872DP and IPB120N04S4-02, IRF7457PBF delivers optimal balance of low RDS(on), moderate Qg, and SO-8 compatibility for 20 V-class telecom and computing power stages-making it ideal where board area, thermal budget, and switching frequency are jointly constrained.
Availability
IRF7457PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.
Supply support for IRF7457PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7457PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in telecom infrastructure and computing applications.
FAQ
Is IRF7457PBF suitable for 4.5 V logic-level gate drive?
Yes. With a gate threshold voltage range of 1.0–3.0 V and guaranteed RDS(on) ≤ 10.5 mΩ at VGS = 4.5 V and ID = 12 A, IRF7457PBF is fully compatible with 4.5 V microcontroller or PWM controller outputs without level-shifting circuitry.
What is the maximum recommended PCB copper area for thermal management?
When mounted on a 1-inch square (25.4 mm × 25.4 mm) FR-4 board with 2 oz copper, IRF7457PBF achieves RθJA ≈ 50 °C/W. For continuous 12 A operation at ambient 70°C, ≥250 mm² of internal or external copper pour connected to drain pins is recommended to maintain TJ < 125°C.
Does IRF7457PBF have built-in ESD protection?
No. IRF7457PBF does not integrate gate oxide ESD protection structures. Standard handling precautions-including grounded wrist straps, conductive foam storage, and series gate resistors (≥10 Ω) during prototyping-are required to prevent electrostatic damage to the 20 V-rated gate oxide.
Can IRF7457PBF replace IRF7413 in existing designs?
Yes, with validation. Both are SO-8 N-channel MOSFETs, but IRF7457PBF offers lower RDS(on) (7.0 mΩ vs. 12 mΩ) and higher ID (15 A vs. 11 A). Layout and gate drive timing must be rechecked due to higher Qg (28–42 nC vs. 18 nC), especially in >1 MHz designs.
IRF7457PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3100 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7457PBF FAQ
1.How can I place an order for IRF7457PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7457PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7457PBF reliable?
The price and inventory of IRF7457PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7457PBF is usually 5 days.
3.What payment methods are accepted for IRF7457PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7457PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7457PBF?
IRF7457PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7457PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7457PBF?
For technical support, including IRF7457PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7457PBF requirements.
6.How does Aetrix verify that IRF7457PBF is sourced from the original manufacturer or authorized distributors?
All IRF7457PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7457PBF meets industry standards.
7.What is the process for return or replacement of IRF7457PBF?
All IRF7457PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7457PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7457PBF part is unused and in its original packaging.
Return procedure for IRF7457PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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