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Infineon Technologies IRF7457TR

Part No.:
IRF7457TR
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7457TR.pdf
Description:
MOSFET N-CH 20V 15A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,012

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Product details

Overview

IRF7457TR from Infineon Technologies (formerly International Rectifier) is a 20 V, 15 A, 7.0 mΩ N-channel HEXFET Power MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and processor power. It features ultra-low RDS(on), fully characterized avalanche capability (265 mJ), and low gate charge (28 nC typ.) for efficient switching at 1–2 MHz.

For engineers reviewing the IRF7457TR datasheet, IRF7457TR pinout, IRF7457TR application, or IRF7457TR equivalent, key selection criteria include its 7.0 mΩ on-resistance at VGS = 10 V, 12 A continuous current at 70°C, 15 A pulsed rating, and SO-8 thermal performance (RθJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-free structure to achieve low conduction loss while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.0–3.0 V) and low Qgd/Qgs ratio (≈0.9) support stable operation with 4.5 V logic-level drive in synchronous rectifier topologies.

The device integrates a fast body diode with trr = 50–75 ns and Qrr = 70–110 nC, enabling efficient reverse recovery in hard-switched and resonant converter stages. Thermal design is supported by validated junction-to-ambient and junction-to-drain thermal resistance values under defined PCB mounting conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS20 V - Maximum drain-source blocking voltage for 3.3 V/5 V input rail applications
RDS(on) max7.0 mΩ @ VGS = 10 V - Enables ≤150 mW conduction loss at 12 A DC current
ID cont12 A @ TA = 70°C - Sustains full load in thermally constrained telecom modules
Qg28 nC typ. - Reduces gate drive power and enables <200 ns total switching time with 1.8 Ω RG
EAS265 mJ - Withstands single-pulse inductive energy without failure in synchronous rectifier flyback
trr50 ns typ. @ TJ = 25°C - Minimizes diode recovery loss during dead-time in half-bridge configurations
RθJA50 °C/W - Validated on standard 1-inch² copper board; defines heatsinking requirements

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.75 mm height, with exposed drain pad for thermal enhancement. Pin 1 marked via laser etch; lead-free (PbF) construction per RoHS.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8Drain (D), Source (S), Gate (G)Pins 1–3 & 5–8: Parallel-connected drain terminals (low-inductance high-current path); Pin 4: Gate; Pins 6–7: Source - SO-8 layout supports dual-side cooling and Kelvin source sensing

Key Features

FeatureDesign Value
Ultra-low RDS(on)7.0 mΩ @ 10 V enables >95% efficiency in 12 A, 5 V output synchronous buck converters
Fully characterized UIS265 mJ single-pulse avalanche energy ensures reliability in unregulated inductive turn-off events
Low Qgd/Qgs ratio~0.9 (10/11 nC) improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments
Logic-level compatibleGuaranteed turn-on at VGS = 4.5 V (RDS(on) ≤ 10.5 mΩ) supports direct microcontroller GPIO drive

Applications

Telecom Isolated DC-DC ConvertersServer CPU Core Voltage Regulators

Use Scenario: 48 V to 12 V isolated forward converter with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve thermal margin.

Use Value: 7.0 mΩ RDS(on) cuts rectifier loss by >60% vs. 40 V Schottky, enabling 20 W higher output power in same footprint.

Use Scenario: Multiphase 3–1.0 V buck converter supplying modern x86 processors with dynamic current up to 12 A per phase.

IC Role / Device Role / Timing Role: High-current, low-RDS(on) power stage switch operating at 500 kHz–1 MHz PWM frequency.

Use Value: 28 nC Qg and 7.5 ns fall time minimize switching loss, supporting >92% efficiency at 12 A load.

Industrial PoE++ Power Sourcing EquipmentAutomotive ADAS Camera Power Modules

Use Scenario: 90 W PoE++ PSE controller delivering regulated 57 V to powered devices with integrated hot-swap protection.

IC Role / Device Role / Timing Role: Primary-side switching FET in active clamp forward topology with tight duty-cycle control.

Use Value: 20 V VDS rating matches clamp voltage margin; 120 A pulsed rating handles surge currents during cable insertion.

Use Scenario: Compact 5 V/3 A buck converter powering image sensor and ISP in rear-view camera module.

IC Role / Device Role / Timing Role: Integrated power switch in monolithic DC-DC IC or discrete high-efficiency regulator stage.

Use Value: -55°C to +150°C TJ range and qualified automotive-grade packaging ensure operation in under-hood temperature cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si7157DP-T1-GE3RDS(on) = 6.5 mΩ @ 10 V; Qg = 31 nC; SO-8 packageSlightly lower RDS(on) but higher gate charge increases drive loss at >1 MHzPreferred for fixed-frequency 500 kHz designs where conduction loss dominates
DMN2011UVT-7RDS(on) = 8.5 mΩ @ 4.5 V; Qg = 22 nC; 2×2 mm WDFN packageSmaller footprint and lower Qg, but higher on-resistance limits peak current to 10 ABetter for space-constrained portable designs with <10 A steady-state load

Compared with Si7157DP and DMN2011UVT, the IRF7457TR offers optimal balance of low RDS(on), moderate Qg, and proven avalanche ruggedness-making it preferred for telecom and industrial SMPS where reliability under transient stress is critical.

Availability

IRF7457TR is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PoE++ power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRF7457TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF7457TR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power conversion in consumer, telecom, and computing applications.

FAQ

Is IRF7457TR suitable for 4.5 V gate drive in synchronous rectifier applications?

Yes. The device guarantees RDS(on) ≤ 10.5 mΩ at VGS = 4.5 V and ID = 12 A, with gate threshold voltage specified between 1.0 V and 3.0 V. This ensures full enhancement and low conduction loss when driven directly by 4.5 V logic or controller outputs without level-shifting.

What is the maximum recommended PCB copper area for thermal performance?

Per the datasheet, thermal characterization was performed on a 1-inch² (25.4 mm × 25.4 mm) FR-4 board with 2 oz copper. Increasing copper area beyond this provides diminishing returns; however, using internal ground/power planes and thermal vias beneath the exposed drain pad improves RθJA by up to 15 °C/W in multilayer boards.

Does IRF7457TR have built-in ESD protection?

No. The device does not integrate dedicated ESD protection circuitry. Its gate oxide is rated for ±20 V absolute maximum VGS; therefore, handling and PCB layout must follow standard MOSFET ESD precautions-including current-limiting gate resistors, avoidance of floating gate traces, and use of grounded wrist straps during assembly.

Can IRF7457TR replace IRF7457PbF in existing designs?

Yes. IRF7457TR is the tape-and-reel version of the same die and package as IRF7457PbF, with identical electrical specifications, thermal ratings, and pinout. The "TR" suffix denotes packaging format only; no parametric or reliability differences exist between the two part numbers.

IRF7457TR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7457TR FAQ

1.How can I place an order for IRF7457TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7457TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7457TR reliable?

The price and inventory of IRF7457TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7457TR is usually 5 days.

3.What payment methods are accepted for IRF7457TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7457TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7457TR?

IRF7457TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7457TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7457TR?

For technical support, including IRF7457TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7457TR requirements.

6.How does Aetrix verify that IRF7457TR is sourced from the original manufacturer or authorized distributors?

All IRF7457TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7457TR meets industry standards.

7.What is the process for return or replacement of IRF7457TR?

All IRF7457TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7457TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7457TR part is unused and in its original packaging.

Return procedure for IRF7457TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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