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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7457TRPBF

Name: IRF7457TRPBF
Brand: Infineon Technologies
SKU: IRF7457TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7457TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7457TRPBF.pdf

Description:: MOSFET N-CH 20V 15A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7457TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 15 A, N-channel Trench MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and industrial power supplies. It features 7.0 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 28–42 nC), and fully characterized avalanche capability (E_AS = 265 mJ).

For engineers reviewing the IRF7457TRPBF datasheet, IRF7457TRPBF pinout, IRF7457TRPBF application, or IRF7457TRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V (8.0–10.5 mΩ), body diode reverse recovery (t_rr = 50–75 ns), thermal resistance (R_θJA = 50 °C/W), and SO-8 lead-free compliance for high-density board layouts.

Technical Context

This MOSFET employs Trench-based silicon process technology to achieve low conduction loss and fast switching with minimal Miller effect-evidenced by C_rss = 270 pF and Q_gd = 10–15 nC at V_DS = 10 V. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) supports 4.5 V logic-level drive in compact point-of-load designs.

The device integrates a robust intrinsic body diode with V_SD = 0.67–1.3 V (T_J = 25–125 °C, I_S = 12 A), enabling efficient freewheeling in synchronous buck topologies without external Schottky diodes. Avalanche-rated operation allows reliable unclamped inductive switching up to I_AS = 15 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) @ V_GS = 10 V	7.0 mΩ - Enables ≤15 A continuous conduction with <0.2 W conduction loss at 25 °C
R_DS(on) @ V_GS = 4.5 V	8.0–10.5 mΩ - Ensures usable on-resistance under 5 V logic drive in space-constrained designs
Q_g	28–42 nC - Reduces gate drive power and enables >1 MHz switching in resonant converters
t_rr	50–75 ns - Limits body diode switching loss and EMI in hard-switched synchronous rectifiers
E_AS	265 mJ - Supports single-pulse unclamped inductive energy handling without failure
R_θJA	50 °C/W - Requires minimum copper area (≥1 in²) for 1.6 W dissipation at 70 °C ambient

Pinout & Package

IRF7457TRPBF is housed in a standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed drain pads for enhanced thermal performance. The package measures 4.9 × 6.0 mm with 1.27 mm pitch and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally paralleled terminals forming low-inductance, high-current drain path; connected to exposed pad
8	Gate (G)	High-impedance control terminal requiring <42 nC charge for full enhancement
Source (S)	Source (S)	Common reference node for gate drive and load return; pins 1–7 are drain-only, not source-connected

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.0 mΩ @ 10 V enables <0.2 W conduction loss at 12 A, reducing thermal footprint in dense SMPS
Low gate charge	Q_g = 28–42 nC minimizes driver power and propagation delay in high-frequency (>500 kHz) topologies
Fully characterized avalanche	E_AS = 265 mJ and I_AS = 15 A allow safe operation under unclamped inductive switching stress
Optimized body diode	t_rr = 50–75 ns and Q_rr = 70–110 nC reduce switching loss and voltage overshoot during freewheeling

Applications

Telecom DC-DC Converters

Industrial Buck Regulators

Use Scenario: 48 V to 12 V isolated forward converter with synchronous rectification in base station power modules.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier MOSFET replacing Schottky diode to improve efficiency above 92% at full load.

Use Value: 7.0 mΩ R_DS(on) cuts conduction loss by >60% vs. 45 V Schottky, directly increasing system efficiency and reducing heatsink size.

Use Scenario: High-current CPU core voltage regulator (VRM) delivering up to 15 A at 1.2 V in programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter operating at 1 MHz with 4.5 V gate drive.

Use Value: R_DS(on) of 8.0–10.5 mΩ at 4.5 V ensures stable on-state performance without gate boosting circuitry.

Server Point-of-Load Supplies

Industrial Motor Drive Gate Drivers

Use Scenario: 12 V input, 0.8–3.3 V output VR12-compliant POL module for FPGA and ASIC power domains.

IC Role / Device Role / Timing Role: High-side switch in dual-phase interleaved buck with tight duty-cycle control.

Use Value: Low Q_gd (10–15 nC) and C_rss (270 pF) suppress shoot-through risk and minimize dead-time requirements.

Use Scenario: Half-bridge high-side driver stage in 24 V BLDC motor controller with integrated bootstrap supply.

IC Role / Device Role / Timing Role: High-voltage level-shifted switch controlling gate of main power MOSFETs.

Use Value: 20 V V_DS rating and 150 °C T_J(max) support reliable operation in thermally stressed motor control enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 31 nC; SO-8 package	Lower R_DS(on) but higher C_iss (3500 pF vs. 3100 pF); same 20 V rating	Preferred where conduction loss dominates; verify gate drive strength due to higher input capacitance
DMN2011UW-7	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 25 nC; SOT-23-6 package (not SO-8)	Smaller footprint but lower ID (10 A) and PD (1.25 W); unsuitable for 15 A continuous loads	Select only for space-constrained, lower-current (<10 A) applications where thermal budget permits

Compared with Si7157DP-T1-GE3 and DMN2011UW-7, IRF7457TRPBF offers balanced trade-offs: mid-range R_DS(on), lowest Q_gd/C_rss among the three, and SO-8 thermal mass suitable for sustained 12–15 A operation without derating.

Availability

IRF7457TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial buck regulators, and server point-of-load supplies requiring stable component supply, long-lifecycle availability, and lead-free compliance.

Supply support for IRF7457TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This MOSFET belongs to Infineon's OptiMOS™ Trench family, engineered specifically for high-efficiency, high-frequency switching power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7457TRPBF supports 12 A continuous drain current at T_A = 70°C with proper PCB copper area (≥1 in²) and no forced airflow. This rating assumes SO-8 mounting on FR-4 with 1 oz copper and is derived from its 1.6 W power dissipation limit and 50 °C/W junction-to-ambient thermal resistance.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 1.8 Ω, as used in official switching time tests) is recommended to dampen ringing caused by gate loop inductance and prevent unintended turn-on due to dv/dt coupling. The device's low gate impedance (Q_g = 28–42 nC) makes it sensitive to fast edge rates without series resistance.

Can IRF7457TRPBF be used in linear mode (as a pass transistor)?

No-it is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤10 ms at V_DS > 5 V, and continuous linear use risks thermal runaway due to positive R_DS(on) temperature coefficient and lack of SOA derating data beyond 100 µs pulses.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is fully specified with t_rr = 50–75 ns and Q_rr = 70–110 nC at T_J = 25–125 °C, enabling clean commutation in synchronous buck and forward converters up to ~1 MHz. Its soft recovery behavior reduces EMI compared to standard PN diodes.

IRF7457TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7457TRPBF FAQ

1.How can I place an order for IRF7457TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7457TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7457TRPBF reliable?

The price and inventory of IRF7457TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7457TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7457TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7457TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7457TRPBF?

IRF7457TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7457TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7457TRPBF?

For technical support, including IRF7457TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7457TRPBF requirements.

6.How does Aetrix verify that IRF7457TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7457TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7457TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7457TRPBF?

All IRF7457TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7457TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7457TRPBF part is unused and in its original packaging.

Return procedure for IRF7457TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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