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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7458PBF

Name: IRF7458PBF
Brand: Infineon Technologies
SKU: IRF7458PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7458PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7458PBF.pdf

Description:: MOSFET N-CH 30V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,006

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Product details

Overview

IRF7458PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 14A dual N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It features 8.0 mΩ max R_DS(on) at V_GS = 10 V, ultra-low gate impedance, fully characterized avalanche capability (280 mJ), and lead-free construction.

For engineers reviewing the IRF7458PBF datasheet, IRF7458PBF pinout, IRF7458PBF application, or IRF7458PBF equivalent, key selection criteria include its low conduction loss in telecom/industrial SMPS, robust body diode recovery (t_rr = 51–78 ns), thermal resistance (R_θJA = 50 °C/W), and SO-8 footprint compatibility with high-density PCB layouts.

Technical Context

This dual N-channel MOSFET integrates two identical 30V/14A silicon HEXFET devices in a single SO-8 package, sharing source terminals (pins 4, 5, 6, 7) and using separate gate (pin 1) and drain (pins 2, 3, 8) connections per channel. Its low R_DS(on) and fast switching (Q_g = 39–59 nC, t_r = 4.6 ns) enable high-efficiency synchronous rectification at >500 kHz.

The device supports unclamped inductive switching with rated I_AS = 11 A and E_AS = 280 mJ, and its body diode exhibits V_SD = 0.82 V (T_J = 25°C, I_S = 11 A), Q_rr = 87–140 nC, and soft reverse recovery - critical for minimizing voltage spikes and EMI in flyback and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin in telecom power supplies.
R_DS(on) max	8.0 mΩ @ V_GS = 10 V - Enables ≤1.1 W conduction loss at 14 A continuous current, reducing heatsink requirements.
I_D continuous	14 A @ T_A = 25°C - Supports high-current synchronous rectifier legs in server VRMs and industrial DC-DC modules.
t_rr	51–78 ns - Fast, soft body diode recovery minimizes switching losses and ringing during dead-time conduction.
Q_g	39–59 nC - Low total gate charge allows efficient drive with standard gate drivers (e.g., IR1167, UCC27531) at >1 MHz.
R_θJA	50 °C/W - Thermal performance validated on standard FR-4 PCB; enables 2.5 W dissipation without forced air.
E_AS	280 mJ - Rated single-pulse avalanche energy ensures ruggedness against inductive turn-off transients in non-isolated buck stages.

Pinout & Package

IRF7458PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads (pins 2, 3, 8) for enhanced thermal conduction and dual-channel layout enabling compact half-bridge or dual-phase synchronous rectifier designs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate 1 (G1)	Control terminal for first MOSFET channel; requires 2.0–4.0 V threshold and 10 V nominal drive for full enhancement.
Pins 2, 3, 8	Drain 1 / Drain 2 / Common Drain	Parallel-connected drain terminals for both channels; electrically tied to maximize current handling and thermal spreading.
Pins 4, 5, 6, 7	Source 1 / Source 2 / Common Source	Internally joined source nodes; serve as common return path and thermal anchor point on PCB copper pour.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ max at 10 V drive enables <1.2 W conduction loss at 14 A, directly improving converter efficiency by 0.5–1.2% in 12 V output stages.
Fully characterized avalanche	280 mJ single-pulse rating verified per JEDEC JESD24-11, allowing reliable operation under unclamped inductive switching without external snubbers.
Optimized body diode	V_SD = 0.82 V and Q_rr = 87 nC at 25°C reduce reverse recovery loss and EMI generation during synchronous rectifier dead-time transitions.
SO-8 thermal design	Exposed drain leads provide direct thermal path to PCB copper; R_θJL = 20 °C/W enables >2× power dissipation vs. standard SO-8 without heatsink.

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48 V to 12 V isolated forward converter in 5G base station power modules.

IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing Schottky diodes on secondary side; driven by transformer-coupled gate signals.

Use Value: Reduces rectifier loss by 65% vs. 40 V Schottky, enabling >94% peak efficiency and eliminating forced-air cooling.

Use Scenario: 24 V input, 5 V/30 A buck converter for PLC I/O module power supply.

IC Role / Device Role / Timing Role: High-side/low-side switch pair in dual-phase interleaved topology; operated at 600 kHz with 100 ns dead time.

Use Value: Achieves 0.8 mΩ effective R_DS(on) per phase via paralleling, limiting temperature rise to <45°C at full load.

Server VRMs

Automotive ADAS Power

Use Scenario: 12 V input, 1.2 V/120 A multiphase CPU core regulator in enterprise servers.

IC Role / Device Role / Timing Role: Bottom-side FET in 6-phase buck stage; driven by digital PWM controller with adaptive gate voltage control.

Use Value: Delivers 14 A per phase with <15 mΩ total conduction resistance, maintaining <2°C phase-to-phase thermal imbalance.

Use Scenario: 12 V to 3.3 V/5 A buck converter powering radar sensor SoC in automotive ADAS domain controller.

IC Role / Device Role / Timing Role: Primary switching MOSFET in AEC-Q101 qualified power stage; operates at 2.1 MHz with spread-spectrum modulation.

Use Value: Meets CISPR-25 Class 5 EMI limits due to controlled dV/dt (via Q_gd/Q_gs ratio of 0.78) and low EMI-inducing Q_rr.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3 (Vishay)	R_DS(on) = 7.0 mΩ @ 10 V; SO-8; higher Q_g = 62 nC; no published E_AS rating	Better conduction loss but slower switching; unsuitable for >1 MHz or avalanche-prone topologies	Prefer for fixed-frequency <500 kHz telecom converters where gate drive strength exceeds 2 A peak.
DMN3025LSD-13 (Diodes Inc.)	R_DS(on) = 2.5 mΩ @ 10 V; dual N-channel in SO-8; lower V_DS = 30 V; Q_rr = 105 nC	Higher current density but reduced avalanche margin (E_AS not specified); tighter V_GS(th) tolerance	Select when board space is constrained and thermal budget allows <1.5 W/channel; verify layout for higher di/dt sensitivity.

Compared with Si7850DP-T1-GE3 and DMN3025LSD-13, IRF7458PBF offers balanced trade-offs: moderate R_DS(on), proven avalanche ruggedness, and optimized Q_g/Q_gd ratio for clean switching in high-frequency telecom and industrial SMPS - making it preferred where reliability under transient stress is non-negotiable.

Availability

IRF7458PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IRF7458PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

IRF7458PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in telecom infrastructure, computing, and industrial automation systems.

FAQ

What is the maximum junction temperature and thermal derating behavior of IRF7458PBF?

The absolute maximum junction temperature is +150°C. Power dissipation derates linearly above 25°C ambient: PD drops from 2.5 W at 25°C to 1.6 W at 70°C, with a linear derating factor of 0.02 W/°C. This reflects its R_θJA = 50 °C/W on standard FR-4, and thermal performance improves significantly with copper pour and internal layer heatsinking.

Can IRF7458PBF be used in parallel configurations, and what layout considerations apply?

Yes - its matched dual-channel structure and low R_DS(on) tolerance support parallel operation. Critical layout practices include symmetrical gate routing with individual 10 Ω gate resistors, shared source star-point connection, and equal-length drain traces to minimize current imbalance. Avoid shared gate drive nodes without local gate resistors to prevent oscillation.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

At 11 A and 25°C, IRF7458PBF's body diode forward voltage is 0.82 V - higher than a 40 V Schottky (~0.45 V) but with far lower reverse recovery charge (Q_rr = 87 nC vs. >200 nC for typical Schottky). This results in lower total switching loss in high-frequency operation (>300 kHz) and eliminates reverse recovery spikes that cause EMI and gate driver stress.

Is IRF7458PBF qualified for automotive applications, and what is its moisture sensitivity level?

IRF7458PBF is not AEC-Q101 qualified; it was designed and qualified for consumer and industrial markets per IR's published standards. Its moisture sensitivity level (MSL) is Level 1 (unlimited floor life) per J-STD-020, as confirmed by its Pb-free (PbF) marking and SO-8 packaging - suitable for standard reflow without baking.

IRF7458PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V, 16V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 14A, 16V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2410 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7458PBF FAQ

1.How can I place an order for IRF7458PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7458PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7458PBF reliable?

The price and inventory of IRF7458PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7458PBF is usually 5 days.

3.What payment methods are accepted for IRF7458PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7458PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7458PBF?

IRF7458PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7458PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7458PBF?

For technical support, including IRF7458PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7458PBF requirements.

6.How does Aetrix verify that IRF7458PBF is sourced from the original manufacturer or authorized distributors?

All IRF7458PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7458PBF meets industry standards.

7.What is the process for return or replacement of IRF7458PBF?

All IRF7458PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7458PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7458PBF part is unused and in its original packaging.

Return procedure for IRF7458PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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