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Infineon Technologies IRF7458TR
- Part No.:
- IRF7458TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7458TR.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,609
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Product details
Overview
IRF7458TR from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It delivers 30 V VDS, 8.0 mΩ RDS(on) at VGS = 10 V, 14 A continuous drain current at TA = 25°C, and features fully characterized avalanche capability (EAS = 280 mJ) for robust power conversion in telecom and industrial systems.
For engineers reviewing the IRF7458TR datasheet, IRF7458TR pinout, IRF7458TR application, or IRF7458TR equivalent, key selection criteria include low gate charge (Qg = 39–59 nC), fast switching (tr = 4.6 ns, tf = 5.0 ns), body diode performance (VSD = 0.82 V @ IS = 11 A), thermal resistance (RθJA = 50 °C/W), and SO-8 footprint compatibility with standard PCB layouts.
Technical Context
The IRF7458TR integrates two identical N-channel MOSFETs sharing a common source terminal in a single SO-8 package, enabling complementary half-bridge or dual-phase synchronous rectifier topologies. Its low RDS(on) and optimized gate charge profile support operation above 500 kHz in isolated flyback and forward converters.
It employs trench-gate HEXFET® technology with enhanced avalanche ruggedness and tightly controlled VGS(th) (2.0–4.0 V), ensuring reliable turn-on across temperature and supply voltage variations. The integrated body diode exhibits low reverse recovery charge (Qrr = 87–130 nC) and fast trr (51–77 ns), minimizing switching losses during freewheeling conduction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V input rail applications with margin |
| RDS(on) max | 8.0 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 11 A in 12 V output rails |
| ID continuous | 14 A @ TA = 25°C - Supports high-current synchronous rectification without forced air |
| Qg total | 39–59 nC - Reduces gate drive power and enables efficient 1–2 MHz PWM control |
| tr/tf | 4.6 ns / 5.0 ns - Minimizes overlap loss in hard-switched topologies |
| EAS | 280 mJ - Withstands unclamped inductive energy during fault conditions |
| RθJA | 50 °C/W - Requires minimal copper area on 1-inch² board for thermal compliance |
Pinout & Package
IRF7458TR uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads for thermal enhancement. Pin 1 is Gate 1, Pin 2 is Source 1, Pin 3 is Drain 1, Pin 4 is Drain 2, Pin 5 is Source 2, Pin 6 is Gate 2, Pin 7 is Drain 3, Pin 8 is Drain 4 - configured as dual independent N-channel devices with shared-source topology (S1/S2 internally connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G1) | Gate of Channel 1 | Controls turn-on of first MOSFET; requires 10 V drive for full RDS(on) |
| Pin 2 (S1) | Source of Channel 1 | Common source node; electrically tied to Pin 5 (S2) internally |
| Pin 3 (D1) | Drain of Channel 1 | High-side switch node in half-bridge; connects to transformer secondary |
| Pin 4 (D2) | Drain of Channel 2 | Low-side switch node; used for synchronous rectifier return path |
| Pin 5 (S2) | Source of Channel 2 | Internally bonded to Pin 2 - forms shared source for dual-channel operation |
| Pin 6 (G2) | Gate of Channel 2 | Independent gate control for second MOSFET; timing-critical for phase alignment |
| Pins 7 & 8 (D3/D4) | Additional Drain Terminals | Parallel drain connections to reduce package inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 8.0 mΩ at 10 V drive enables >95% efficiency in 12 V/10 A telecom rectifiers |
| Low gate charge | Qg = 39–59 nC reduces driver IC loading and gate loss in high-frequency operation |
| Fully characterized avalanche | EAS = 280 mJ supports reliable operation under transient overloads without external snubbers |
| Fast body diode recovery | Qrr = 87–130 nC and trr = 51–77 ns minimize reverse recovery loss in synchronous rectification |
| SO-8 thermal design | RθJL = 20 °C/W to drain lead enables direct heat transfer to PCB copper pour |
Applications
| Telecom Isolated DC-DC Converters | Server VRM Buck Regulators |
|---|---|
Use Scenario: 48 V to 12 V isolated forward converter in 1RU telecom shelf with 200 kHz switching frequency. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing Schottky diodes on secondary side; G1/G2 driven by transformer-coupled gate signals. Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling 15 W/cm² power density with natural convection cooling. | Use Scenario: Multiphase 1.2 V/120 A CPU core regulator using interleaved buck stages. IC Role / Device Role / Timing Role: High-side and low-side switch pair per phase; operated in synchronous mode with precise dead-time control. Use Value: Achieves <0.5 mΩ effective RDS(on) per phase via paralleling, limiting junction rise to <45°C at full load. |
| Industrial PLC Power Supplies | Medical Imaging DC-DC Modules |
Use Scenario: 24 V input, 5 V/20 A output flyback converter in DIN-rail mounted PLC power module. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with adaptive gate timing to compensate for variable duty cycle. Use Value: Eliminates 2.4 W diode conduction loss, reducing thermal stress on potting compound and extending MTBF beyond 100,000 hours. | Use Scenario: Compact 24 V to ±15 V isolated dual-output converter for CT scanner analog front-end bias rails. IC Role / Device Role / Timing Role: Dual-channel rectifier supporting independent positive/negative rail regulation with tight cross-regulation. Use Value: Maintains <±1% output deviation across 10–100% load due to matched RDS(on) tracking between channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 6.5 mΩ @ 10 V; Qg = 42 nC; SO-8; VDS = 30 V | Lower RDS(on) but higher Ciss (2900 pF vs. 2410 pF); less avalanche-rated (EAS not specified) | Preferred where conduction loss dominates and avalanche stress is minimal |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; dual N; SO-8; VDS = 30 V; Qg = 19 nC | Superior RDS(on) and lower Qg, but no published EAS or Qrr data; not qualified for industrial temp range | Best for high-efficiency, non-avalanche-critical consumer-grade designs |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, the IRF7458TR offers balanced trade-offs: verified avalanche ruggedness for industrial reliability, documented Qrr for synchronous rectifier design, and SO-8 thermal performance validated up to 150°C junction temperature - making it suitable where safety-critical transient immunity is required.
Availability
IRF7458TR is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial PLCs, and medical imaging DC-DC modules requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for IRF7458TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
The IRF7458TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in telecom, computing, and industrial applications where low RDS(on), fast switching, and avalanche robustness are critical.
FAQ
What is the maximum safe operating frequency for IRF7458TR in synchronous rectification?
The IRF7458TR supports reliable operation up to 1 MHz in synchronous rectifier configurations, based on its 4.6 ns rise time, 5.0 ns fall time, and 2410 pF input capacitance. At 500 kHz, gate drive losses remain below 0.3 W with a 1.8 Ω series resistor, and thermal limits are maintained with ≥2 cm² of 2-oz copper on the drain pad.
Does IRF7458TR require negative gate turn-off voltage?
No. The IRF7458TR has a gate threshold voltage range of 2.0–4.0 V and is designed for 0–10 V or 0–12 V gate drive. Negative turn-off voltage is not required or recommended; applying VGS < –5 V risks exceeding the ±30 V absolute maximum rating and may accelerate gate oxide degradation.
How is the shared-source configuration implemented internally?
The IRF7458TR integrates two discrete N-channel MOSFET dice in one SO-8 package with their source terminals bonded together to Pin 2 and Pin 5. This internal connection is verified in the device's die photograph and SPICE model; external traces must route S1 and S2 to the same net, typically the output capacitor ground plane.
Can IRF7458TR be used in linear regulator applications?
No. The IRF7458TR is not characterized for linear-mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only, and the RDS(on) increases significantly above 100°C. For linear regulation, dedicated LDOs or bipolar pass transistors with SOA-rated derating should be used instead.
IRF7458TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V, 16V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 14A, 16V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2410 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7458TR FAQ
1.How can I place an order for IRF7458TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7458TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7458TR reliable?
The price and inventory of IRF7458TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7458TR is usually 5 days.
3.What payment methods are accepted for IRF7458TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7458TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7458TR?
IRF7458TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7458TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7458TR?
For technical support, including IRF7458TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7458TR requirements.
6.How does Aetrix verify that IRF7458TR is sourced from the original manufacturer or authorized distributors?
All IRF7458TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7458TR meets industry standards.
7.What is the process for return or replacement of IRF7458TR?
All IRF7458TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7458TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7458TR part is unused and in its original packaging.
Return procedure for IRF7458TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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