Infineon Technologies IRF7459PBF

Overview

IRF7459PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 12 A, N-channel SO-8 packaged MOSFET optimized for synchronous rectification in high-frequency DC-DC converters. It features 9.0 mΩ R_DS(on) at V_GS = 10 V, 11 mΩ at 4.5 V, and 23 nC total gate charge - enabling efficient operation in telecom and industrial isolated buck converters with tight thermal constraints.

For engineers reviewing the IRF7459PBF datasheet, IRF7459PBF pinout, IRF7459PBF application, or IRF7459PBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, fully characterized avalanche rating (290 mJ), body diode reverse recovery performance (70–105 ns), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This HEXFET power MOSFET uses a trench-gate process to achieve ultra-low on-resistance and gate impedance. Its 4.5 V logic-level compatibility enables direct drive from standard PWM controllers without level-shifting, while its fully characterized unclamped inductive switching (UIS) capability supports robust operation under transient overloads.

The device integrates a fast, low-Q_rr body diode (Q_rr = 70–113 nC, t_rr = 70–105 ns) with low forward voltage (V_SD = 0.84 V at 9.6 A, T_J = 25°C), making it suitable for synchronous rectification where diode conduction loss and reverse recovery loss dominate efficiency.

Key Specifications

Pinout & Package

IRF7459PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012, EIA-481 compliant), with exposed drain pads for enhanced thermal transfer. The package measures 4.9 × 6.0 mm and supports reflow soldering per IPC/JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN2020LSD-13, IRF7459PBF offers the best balance of low 4.5 V R_DS(on), moderate Q_g, and proven avalanche ruggedness - making it preferred for telecom and industrial isolated converters where reliability under transient stress is critical.

Availability

IRF7459PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial isolated buck regulators, and server VRM synchronous rectifiers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7459PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF7459PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in space-constrained power supplies.

FAQ

Is IRF7459PBF suitable for 3.3 V gate drive applications?

Yes. With a gate threshold voltage (V_GS(th)) of 0.6–2.0 V and R_DS(on) = 11 mΩ at V_GS = 4.5 V, IRF7459PBF achieves full enhancement using standard 3.3 V logic outputs when paired with appropriate gate resistor sizing to manage dv/dt. Its 4.5 V characterization ensures predictable on-state performance without gate boosting.

What is the maximum continuous drain current at 85°C case temperature?

At T_C = 85°C, the maximum continuous drain current is approximately 8.5 A. This is derived from linear derating: PD @ TA = 70°C = 1.6 W, derating factor = 0.02 W/°C → PD @ 85°C = 1.6 W − (15°C × 0.02 W/°C) = 1.3 W. Using R_DS(on) = 11 mΩ (worst-case at 4.5 V), I_D = √(P/R) ≈ √(1.3/0.011) ≈ 10.9 A; however, thermal limits and SO-8 package constraints reduce practical continuous rating to ~8.5 A at 85°C case.

Does IRF7459PBF have an integrated Schottky diode?

No. IRF7459PBF uses the intrinsic body diode formed by the MOSFET's p-n junction. It is not a Schottky or hybrid device. However, its body diode is fully characterized for reverse recovery (t_rr = 70–105 ns, Q_rr = 70–113 nC) and optimized for synchronous rectification - offering faster recovery and lower Q_rr than standard power MOSFETs of similar rating.

Can IRF7459PBF be used in avalanche mode repeatedly?

No. The 290 mJ E_AS rating is specified for single-pulse avalanche only. Repetitive avalanche operation is not guaranteed and may cause cumulative degradation. Designers must ensure circuit conditions (e.g., inductive energy, di/dt, clamping voltage) remain within single-pulse limits, or implement external protection (e.g., TVS, RCD snubber) for repetitive stress scenarios.