Infineon Technologies IRF7459TRPBF

Overview

IRF7459TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 12 A, N-channel logic-level MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency DC-DC converters. It features 9.0 mΩ R_DS(on) at V_GS = 10 V, 11 mΩ at 4.5 V, and 100 ns reverse recovery time, enabling efficient power conversion in telecom and industrial isolated supplies.

For engineers reviewing the IRF7459TRPBF datasheet, IRF7459TRPBF pinout, IRF7459TRPBF application, or IRF7459TRPBF equivalent, key selection criteria include low gate charge (23 nC typ.), ultra-low R_DS(on) at 4.5 V, avalanche energy rating (290 mJ), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This HEXFET Power MOSFET uses planar silicon process with integrated body diode and is characterized for unclamped inductive switching (UIS) up to 290 mJ. Its gate threshold voltage (0.6–2.0 V) and low input capacitance (C_iss = 2480 pF) support fast, low-loss switching in buck and flyback topologies.

The device operates across –55 °C to +150 °C junction temperature range and delivers stable R_DS(on) performance up to 125 °C. Its 100 ns trr and 70 nC Q_rr enable reliable synchronous rectification without external snubbing in 500 kHz+ converters.

Key Specifications

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AC, EIA-481 compliant), 4.9 mm × 6.0 mm footprint, 1.75 mm height, with exposed drain pad for enhanced thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRF7459TRPBF, Si7852DP-T1-GE3 offers marginally better conduction efficiency but demands stronger gate drive, while DMN3022LSD-13 trades 14% higher R_DS(on) for 30% lower Q_g, favoring high-frequency, low-duty-cycle operation.

Availability

IRF7459TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial isolated SMPS, and server VRM buck stages requiring stable component supply and long-term production continuity.

Supply support for IRF7459TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRF7459TRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification and DC-DC conversion in space- and thermally-constrained systems.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRF7459TRPBF supports 10 A continuous drain current at T_A = 70°C with proper PCB copper area and airflow. This rating assumes SO-8 mounting on 1-inch square 2-oz copper; derating follows 0.02 W/°C beyond 70°C ambient.

Does this MOSFET require a gate resistor for stability in synchronous rectifier applications?

Yes - a 1–5 Ω gate resistor is recommended to damp ringing caused by 2480 pF C_iss interacting with PCB inductance. Typical evaluation uses 1.8 Ω (as specified in switching time test conditions), balancing speed and EMI control.

Can IRF7459TRPBF replace a Schottky diode in a 12 V output flyback converter?

Yes - its 70 ns t_rr, 11 mΩ R_DS(on) at 4.5 V, and integrated body diode make it suitable for synchronous rectification in 12 V flyback outputs up to 500 kHz, provided gate drive timing avoids shoot-through during dead-time.

Is the SO-8 package thermally enhanced with an exposed drain pad?

Yes - pins 1–4 and the underside of the SO-8 package form a single exposed drain thermal pad. For optimal R_θJA, this pad must be soldered to ≥1 in² of internal or external copper pour using ≥4 thermal vias to inner layers.