Infineon Technologies IRF7460PBF

Overview

IRF7460PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 12 A, N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators for telecom and industrial power supplies. It features 7.2 mΩ R_DS(on) at V_GS = 10 V, 19 nC total gate charge, and fully characterized avalanche capability (240 mJ E_AS).

For engineers reviewing the IRF7460PBF datasheet, IRF7460PBF pinout, IRF7460PBF application, or IRF7460PBF equivalent, key selection criteria include low conduction loss at 12 A, fast switching with 11 ns turn-on delay and 4.3 ns fall time, robust body diode recovery (44–66 ns t_rr), and thermal performance validated up to +150 °C junction temperature.

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell pitch and trench-free structure to achieve ultra-low R_DS(on) while maintaining high dV/dt immunity and controlled gate charge distribution. Its 19 nC Q_g and 6.0 nC Q_gd support efficient operation in 500 kHz–1 MHz switching topologies.

The device integrates a co-packaged p-n junction body diode with 0.8 V forward voltage at 9.6 A and 25 °C, enabling reliable unclamped inductive switching. Avalanche rating (9.6 A I_AR, 240 mJ E_AS) is validated per JEDEC JESD24-11 under repetitive pulsed conditions with L = 5.2 mH and RG = 25 Ω.

Key Specifications

Pinout & Package

IRF7460PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction to PCB copper. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiR872DP-T1-GE3 and IPB80N04S4-02, IRF7460PBF offers optimal balance of low Q_g/R_DS(on) ratio and SO-8 thermal performance for compact, high-frequency synchronous rectifiers-making it preferred over lower-R_DS(on) alternatives where gate drive loss or layout area is constrained.

Availability

IRF7460PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial buck regulators, and server VRMs requiring stable component supply across multi-year production cycles.

Supply support for IRF7460PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial sensors.

The IRF7460PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in space-constrained power conversion systems where thermal density and gate drive simplicity are critical.

FAQ

What is the maximum recommended gate drive voltage for IRF7460PBF?

The absolute maximum V_GS rating is ±20 V, but the device is fully specified and characterized at V_GS = 10 V for R_DS(on) and switching parameters. Driving above 12 V provides negligible R_DS(on) improvement (<2%) while increasing gate oxide stress and ESD vulnerability; 10 V is the optimal and industry-standard drive level.

Can IRF7460PBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature, per Fig 4) ensures inherent current sharing when paralleled. Designers must match gate loop inductance and use Kelvin source connections to avoid oscillation; typical layouts support up to four devices in parallel for >40 A output stages.

Does IRF7460PBF require a gate resistor for stability?

A gate resistor (typically 1–10 Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 150 pF) interacting with PCB trace inductance. Without it, overshoot exceeding 20 V can occur during fast switching, risking gate oxide breakdown. The 1.8 Ω RG used in datasheet switching tests (Fig 10b) is a validated starting point for 1 MHz operation.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is fully characterized with t_rr = 44–66 ns and Q_rr = 60–96 nC across 25–125 °C. Its soft recovery profile minimizes EMI and allows zero-voltage switching (ZVS) in resonant topologies. However, it must be actively commutated before reverse recovery completes to avoid cross-conduction losses in synchronous buck stages.