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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7460TRPBF

Name: IRF7460TRPBF
Brand: Infineon Technologies
SKU: IRF7460TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7460TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7460TRPBF.pdf

Description:: MOSFET N-CH 20V 12A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7460TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 12 A, N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It features 7.2 mΩ R_DS(on) at V_GS = 10 V, 19 nC total gate charge, and fully characterized avalanche capability (240 mJ E_AS). Used in telecom and industrial power supplies where low conduction loss and fast switching are critical.

For engineers reviewing the IRF7460TRPBF datasheet, IRF7460TRPBF pinout, IRF7460TRPBF application, or IRF7460TRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V (10.5 mΩ), Q_gd/Q_gs ratio (0.87), body diode reverse recovery (44–66 ns), thermal resistance R_θJA (50 °C/W), and SO-8 lead-free compliance.

Technical Context

This MOSFET employs trench-gate HEXFET technology to achieve ultra-low gate impedance and minimized Miller capacitance (C_rss = 150 pF). Its 2050 pF C_iss and 1060 pF C_oss support operation above 1 MHz in hard-switched topologies.

The device integrates a robust body diode with 0.8 V forward voltage at 9.6 A and 25 °C, enabling reliable unclamped inductive switching. Avalanche rating (I_AR = 9.6 A, E_AS = 240 mJ) is validated per JEDEC JESD24-11 under repetitive 400 µs pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on) @ V_GS = 10 V	7.2 mΩ - Enables ≤150 mW conduction loss at 12 A continuous current
Q_g	19 nC - Determines gate drive power requirement for 500 kHz switching
C_rss	150 pF - Low Miller capacitance reduces switching-induced dv/dt coupling and improves turn-off control
E_AS	240 mJ - Supports single-pulse unclamped inductive energy handling without failure
R_θJA	50 °C/W - Requires heatsinking or copper pour for >1.6 W continuous dissipation at 70 °C ambient
V_GS(th)	1.0–3.0 V - Ensures reliable turn-on with 3.3 V logic-level gate drivers

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.75 mm height, lead-free (PbF) compliant. Thermal pad not electrically connected; drain terminals (pins 1–4) are internally tied to exposed die attach area.

Pin/Terminal	Circuit Role	Design Meaning
1–4 (D)	Drain	Four parallel drain leads reduce package inductance and improve current sharing in high-di/dt synchronous rectifiers
5 (G)	Gate	Single gate input with 19 nC total charge; layout must minimize loop inductance to suppress ringing
6–8 (S)	Source	Three-source-pin configuration lowers source inductance, critical for accurate current sensing and stable gate drive return path

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	10.5 mΩ - Enables direct drive from 5 V or 4.5 V controllers without level-shifting
Low Q_gd/Q_gs ratio	0.87 - Reduces Miller plateau duration and improves controllability during hard switching
Fully characterized avalanche	240 mJ E_AS at I_AR = 9.6 A - Eliminates need for external snubbers in flyback or LLC resonant converters
Optimized body diode	t_rr = 44 ns, Q_rr = 60 nC - Minimizes reverse recovery loss and EMI in synchronous rectification

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V to 12 V isolated half-bridge converter in telecom shelf power modules.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side, replacing Schottky diodes to reduce conduction loss.

Use Value: Achieves >95% efficiency at full load by cutting rectifier loss by 65% versus 40 V Schottky.

Use Scenario: Multiphase buck converter delivering 1 V/150 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side switch in interleaved phase leg, operating at 500 kHz–1 MHz.

Use Value: 7.2 mΩ R_DS(on) and 19 nC Q_g enable low-loss, low-noise switching with minimal gate driver overhead.

Industrial SMPS

LED Driver Power Stages

Use Scenario: 24 V input offline flyback with active clamp for factory automation sensors.

IC Role / Device Role / Timing Role: Clamp switch handling repetitive unclamped inductive energy during reset.

Use Value: Validated 240 mJ single-pulse avalanche rating ensures reliability without derating at 85 °C ambient.

Use Scenario: Constant-current buck LED driver for high-bay lighting (36 V output, 3 A).

IC Role / Device Role / Timing Role: Main power switch regulating average current via PWM dimming at 1–20 kHz.

Use Value: Low 0.8 V body diode V_SD minimizes reverse conduction loss during freewheeling, improving thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 6.1 mΩ @ 10 V; Q_g = 22 nC; SO-8 with thermal pad	Higher thermal performance due to exposed pad; requires PCB thermal via design	Preferred when board-level thermal management supports enhanced heat transfer
DMN2011UFG-7	R_DS(on) = 8.5 mΩ @ 10 V; Q_g = 13.5 nC; smaller 2×2 mm WDFN package	Lower gate charge enables faster switching but higher conduction loss	Selected for space-constrained designs prioritizing switching speed over conduction efficiency

Compared with IRF7460TRPBF, SiR872DP offers lower R_DS(on) at the cost of higher Q_g and thermal pad dependency, while DMN2011UFG trades conduction loss for compact size and reduced drive energy-making each suitable for distinct layout and thermal constraints.

Availability

IRF7460TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRF7460TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7460TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7460TRPBF supports 10 A continuous drain current at T_A = 70°C with proper PCB copper area (1 inch²), based on its 1.6 W power dissipation limit and 50 °C/W R_θJA. Derating follows 0.02 mW/°C beyond 70°C ambient, requiring thermal analysis for enclosure or forced-air conditions.

Does this MOSFET require a gate resistor for stability?

Yes-a 1.8 Ω gate resistor is specified in the datasheet for switching time characterization (t_d(off), t_f). For practical use, a 2–10 Ω series resistor is recommended to dampen gate ringing caused by PCB inductance and the device's low input impedance, especially at >300 kHz.

Can IRF7460TRPBF be used in linear mode (constant-current regulation)?

No-it is not rated or characterized for linear (ohmic) operation. The Safe Operating Area (SOA) curve limits pulse operation only; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin below 10 V V_DS.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is fully characterized with t_rr = 44–66 ns and Q_rr = 60–96 nC across temperature. Its soft recovery behavior and low Q_rr make it viable for synchronous rectification in isolated DC-DC converters up to 1 MHz, provided gate timing avoids shoot-through.

IRF7460TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7460TRPBF FAQ

1.How can I place an order for IRF7460TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7460TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7460TRPBF reliable?

The price and inventory of IRF7460TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7460TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7460TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7460TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7460TRPBF?

IRF7460TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7460TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7460TRPBF?

For technical support, including IRF7460TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7460TRPBF requirements.

6.How does Aetrix verify that IRF7460TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7460TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7460TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7460TRPBF?

All IRF7460TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7460TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7460TRPBF part is unused and in its original packaging.

Return procedure for IRF7460TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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