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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7463

Name: IRF7463
Brand: Infineon Technologies
SKU: IRF7463
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7463

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7463.pdf

Description:: MOSFET N-CH 30V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:2,834

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Product details

Overview

IRF7463 from Infineon Technologies (acquired International Rectifier) is a 30V, 14A dual N-channel MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency DC-DC converters. It delivers 8 mΩ R_DS(on) at V_GS = 10 V and 9.5 mΩ at 4.5 V, with fully characterized avalanche capability (320 mJ E_AS) and low gate charge (34 nC typ.) for efficient switching in telecom and industrial power supplies.

For engineers reviewing the IRF7463 datasheet, IRF7463 pinout, IRF7463 application, or IRF7463 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V, robust body diode recovery (Q_rr = 65–100 nC), SO-8 thermal performance (R_θJA = 50 °C/W), and validated use in isolated flyback and buck topologies requiring <100 ns turn-off delay.

Technical Context

This dual N-channel MOSFET integrates two identical enhancement-mode silicon devices in a single SO-8 package, sharing source terminals internally to support synchronous rectification without external interconnects. Its gate threshold voltage (0.6–2.0 V) enables direct drive from 3.3 V or 5 V controllers, while the low Miller charge (Q_gd = 12–18 nC) minimizes switching losses during hard commutation.

The device features fully specified unclamped inductive switching (UIS) behavior with 14 A I_AS and 320 mJ E_AS, and its body diode exhibits fast reverse recovery (t_rr = 45–75 ns) and low forward voltage (V_SD = 0.52 V typ. at 11 A, 25 °C), critical for minimizing conduction loss and ringing in high-dV/dt converter stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V input rails and transient margin in telecom systems.
R_DS(on) @ 10 V	6.0–8.0 mΩ - Enables ≤1.1 W conduction loss at 14 A continuous current in thermally constrained PCB layouts.
R_DS(on) @ 4.5 V	7.0–9.5 mΩ - Supports direct logic-level gate drive from PWM controllers without level-shifting circuitry.
Q_g	34–51 nC - Low total gate charge reduces driver power demand and improves efficiency at >500 kHz switching frequencies.
E_AS	320 mJ - Rated single-pulse avalanche energy ensures ruggedness against inductive kickback in synchronous rectifier failure modes.
t_rr	45–75 ns - Fast body diode recovery limits voltage overshoot and EMI generation during freewheeling transitions.
R_θJA	50 °C/W - Thermal resistance enables 1.6 W power dissipation at 70 °C ambient when mounted on standard FR-4 with 1-in² copper pour.

Pinout & Package

IRF7463 is housed in a surface-mount SO-8 package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 5–8 for enhanced thermal conduction. The package supports reflow soldering per IPC-J-STD-020 and provides 20 °C/W junction-to-drain thermal resistance when soldered to internal copper planes.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (Channel 1)	High-current output node for first MOSFET; electrically tied to pins 5–8 via internal substrate connection in dual configuration.
5, 6, 7, 8	Drain (Channel 2)	High-current output node for second MOSFET; shares common source with Channel 1 for synchronous rectifier pairing.
G1 (Pin 3)	Gate (Channel 1)	Independent gate terminal enabling separate control of each channel for asymmetric duty-cycle applications.
G2 (Pin 6)	Gate (Channel 2)	Independent gate terminal; allows interleaved or phase-shifted gate drive to reduce input/output ripple.
S (Pins 4 & 5)	Common Source	Internally connected source node for both channels; serves as reference point for gate drive and current sensing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	9.5 mΩ max - Enables high-efficiency operation directly from 5 V or 3.3 V controller outputs without gate drivers.
Low Q_gd/Q_gs ratio	12–18 nC / 7.6–11.4 nC - Reduces Miller-induced shoot-through risk and improves dv/dt immunity in high-side configurations.
Characterized avalanche performance	320 mJ E_AS at 14 A - Eliminates need for external snubbers in flyback and forward converters under overload conditions.
Fast body diode recovery	t_rr = 45–75 ns - Minimizes reverse recovery loss and associated voltage spikes during zero-voltage switching transitions.

Applications

Telecom DC-DC Converters

Industrial Buck Regulators

Use Scenario: 48 V to 12 V isolated DC-DC module in base station power distribution.

IC Role / Device Role: Synchronous rectifier in secondary-side full-bridge topology.

Use Value: 8 mΩ R_DS(on) cuts conduction loss by 40% vs. Schottky diodes, improving full-load efficiency from 89% to 93%.

Use Scenario: 24 V to 3.3 V point-of-load regulator for PLC I/O modules.

IC Role / Device Role: High-side switch in high-frequency (1 MHz) buck converter.

Use Value: 34 nC Q_g enables clean 10 ns rise/fall times with 1.8 Ω gate resistor, reducing switching loss by 28%.

Server VRMs

Automotive ADAS Power Supplies

Use Scenario: Multiphase CPU core voltage regulator with 3-phase interleaving.

IC Role / Device Role: Low-side synchronous FET in each phase leg.

Use Value: Dual-channel SO-8 layout simplifies PCB routing and reduces trace inductance, cutting peak current overshoot by 15%.

Use Scenario: 12 V to 5 V/3.3 V power supply for radar sensor ECUs.

IC Role / Device Role: Primary switch in automotive-grade buck converter meeting AEC-Q101 stress requirements.

Use Value: -55 °C to +150 °C operating range and 14 A pulsed rating ensure reliability across engine bay temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 32 nC; SO-8 but no internal source tie.	Requires external source connection for dual-channel sync rectification; lacks rated E_AS.	Preferred where discrete gate control and lower Q_g outweigh integrated source convenience.
DMN3029LSD-13	R_DS(on) = 8.2 mΩ @ 10 V; Q_g = 39 nC; dual N-channel with common source in SO-8.	Higher R_DS(on) at 4.5 V (11.5 mΩ); no published avalanche energy rating.	Valid drop-in for non-avalanche-critical buck designs where cost sensitivity exceeds ruggedness needs.

Compared with Si7852DP-T1-GE3 and DMN3029LSD-13, IRF7463 offers superior 4.5 V drive capability and guaranteed avalanche ruggedness-critical for telecom isolated converters-while maintaining identical SO-8 footprint and thermal profile for direct layout reuse.

Availability

IRF7463 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial buck regulators, and server VRMs requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IRF7463 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7463 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained telecom and computing applications.

FAQ

What is the maximum continuous drain current for IRF7463 at 70°C ambient?

The maximum continuous drain current is 11 A at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes SO-8 mounting on a standard FR-4 PCB with 1-in² copper area and accounts for thermal derating beyond 25°C ambient.

Does IRF7463 support logic-level gate drive?

Yes-its gate threshold voltage ranges from 0.6 V to 2.0 V, and it delivers 9.5 mΩ R_DS(on) at V_GS = 4.5 V, enabling reliable enhancement-mode operation with 3.3 V or 5 V microcontroller or PWM controller outputs without external level shifters.

How is the SO-8 package thermally optimized for power dissipation?

The SO-8 package uses exposed drain leads (pins 1–4 and 5–8) that serve as primary thermal paths to PCB copper. With R_θJL = 20 °C/W and R_θJA = 50 °C/W, it achieves 1.6 W power dissipation at 70°C ambient when using 1-in² 2-oz copper pour, verified per JEDEC JESD51-7 test conditions.

Is IRF7463 qualified for automotive applications?

No-IRF7463 is qualified for consumer and industrial markets per Infineon's documentation. It is not AEC-Q101 qualified; for automotive ADAS or infotainment power supplies, designers should select Infineon's OptiMOS™-T2 or StrongIRFET™ series with formal automotive qualification.

IRF7463 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3150 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7463 FAQ

1.How can I place an order for IRF7463 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7463 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7463 reliable?

The price and inventory of IRF7463 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7463 is usually 5 days.

3.What payment methods are accepted for IRF7463?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7463 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7463?

IRF7463 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7463 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7463?

For technical support, including IRF7463 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7463 requirements.

6.How does Aetrix verify that IRF7463 is sourced from the original manufacturer or authorized distributors?

All IRF7463 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7463 meets industry standards.

7.What is the process for return or replacement of IRF7463?

All IRF7463 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7463, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7463 part is unused and in its original packaging.

Return procedure for IRF7463:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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