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Infineon Technologies IRF7463TRPBF

Part No.:
IRF7463TRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixIRF7463TRPBF.pdf
Description:
MOSFET N-CH 30V 14A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,074

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Product details

Overview

IRF7463TRPBF from Infineon Technologies (formerly International Rectifier) is a 30V, 8mΩ, 14A N-channel dual MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency DC-DC converters. It features ultra-low RDS(on) at 4.5V gate drive, fully characterized avalanche capability (320mJ), and integrated body diode with 45ns reverse recovery time. Used in telecom and industrial isolated power supplies.

For engineers reviewing the IRF7463TRPBF datasheet, IRF7463TRPBF pinout, IRF7463TRPBF application, or IRF7463TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (2.7V–10V), junction-to-ambient thermal resistance (50°C/W), SO-8 footprint suitability for high-density layouts, and avalanche-rated operation in unclamped inductive switching.

Technical Context

This dual N-channel MOSFET integrates two identical die in a single SO-8 package, sharing source terminals (pins 5–8) and enabling complementary high-side/low-side or parallel configurations. Its 8mΩ RDS(on) at VGS = 10V and 9.5mΩ at VGS = 4.5V supports efficient synchronous rectification in buck and flyback topologies operating above 300kHz.

The device exhibits 34nC total gate charge and 180pF reverse transfer capacitance (Crss), enabling fast switching with minimal Miller-induced shoot-through risk. Avalanche robustness (14A IAR, 320mJ EAS) allows reliable operation under transient overcurrent conditions without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30V - Maximum drain-source blocking voltage for 24V-input DC-DC stages
RDS(on) @ VGS=4.5V 9.5mΩ - Enables <1W conduction loss at 11A continuous current in compact layouts
ID @ TA=25°C 14A - Continuous current rating with standard SO-8 PCB copper area (1in²)
Qg 34nC - Gate drive energy compatible with low-power PWM controllers (e.g., UC384x)
EAS 320mJ - Single-pulse avalanche energy supporting unclamped inductive turn-off in 3.3mH circuits
trr 45ns - Fast body diode recovery minimizing cross-conduction losses in synchronous rectifiers
RθJA 50°C/W - Thermal performance baseline for thermal design on FR-4 with 1in² copper pour

Pinout & Package

IRF7463TRPBF uses the industry-standard SO-8 (MS-012AA) surface-mount package with exposed drain pads on pins 1–4 and 6–7 for enhanced thermal dissipation. The dual MOSFET shares source connections across pins 5–8.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 6, 7 Drain (D) Common high-current output path; electrically tied internally to maximize current handling per side
5, 8 Source (S) Shared source node for both MOSFETs; connects directly to ground plane for low-inductance return path
5, 8 Source (S) Shared source node for both MOSFETs; connects directly to ground plane for low-inductance return path
5, 8 Source (S) Shared source node for both MOSFETs; connects directly to ground plane for low-inductance return path

Key Features

Feature Design Value
Ultra-low RDS(on) at 4.5V 9.5mΩ enables >95% efficiency in 12V→3.3V synchronous buck converters at 10A
Fully characterized avalanche 320mJ EAS and 14A IAR allow safe operation during transformer leakage energy discharge
Low Qgd/Qgs ratio 12nC/7.6nC minimizes Miller plateau duration, reducing switching transition time and EMI
Fast body diode recovery 45ns trr at 25°C reduces dead-time losses and prevents reverse conduction in hard-switched topologies
Lead-free SO-8 package RoHS-compliant MS-012AA outline with 1.27mm pitch supports automated reflow assembly and IPC-A-610 Class 2 reliability

Applications

Telecom DC-DC Converters Industrial Isolated SMPS

Use Scenario: 48V input to 12V/5V isolated outputs in base station power modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter, replacing Schottky diodes.

Use Value: Reduces conduction loss by 40% vs. 40V Schottky, lowering secondary-side temperature rise by 18°C at full load.

Use Scenario: 24V–48V input to 3.3V/5V outputs in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Low-side switch in primary-side active clamp forward converter.

Use Value: Enables 500kHz switching with <1.2W total switching+conduction loss at 8A output.

Server VRMs High-Density Buck Regulators

Use Scenario: 12V input to 1.8V/1.2V core voltage rails for Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck converter with integrated driver IC.

Use Value: 8mΩ RDS(on) at 10V gate drive maintains <0.5% voltage droop under 100A transient load steps.

Use Scenario: Point-of-load (POL) conversion in network switch line cards with space constraints.

IC Role / Device Role / Timing Role: Dual configuration as paralleled low-side switches for 15A output.

Use Value: SO-8 footprint delivers 14A per device with <0.8°C/W effective θJA using 2oz copper and thermal vias.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel dual MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si7852DP-T1-GE3 RDS(on) = 7.5mΩ @ 10V but higher Qg (42nC); SO-8 with separate sources Requires modified PCB layout due to non-shared source pins; better for independent channel control Prefer when gate drive strength exceeds 1A and source isolation is needed for current sensing
DMN3025LSD-13 Lower RDS(on) (6.5mΩ @ 10V) but no avalanche rating; 30V rating same, SO-8 package Not rated for unclamped inductive switching; unsuitable for flyback or forward converters with leakage spikes Select only for regulated buck converters with tight voltage clamping and <100ns turn-off timing control

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7463TRPBF uniquely balances low RDS(on), controlled gate charge, and certified avalanche ruggedness-making it optimal for telecom and industrial isolated converters where reliability under transient stress is non-negotiable.

Availability

IRF7463TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial isolated SMPS, and server VRMs requiring stable component supply and long-term production continuity.

Supply support for IRF7463TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

IRF7463TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in telecom infrastructure and industrial automation systems.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF7463TRPBF supports 11A continuous drain current at TA = 70°C with standard SO-8 mounting on 1in² copper. This rating assumes no forced airflow and accounts for thermal derating of 0.02mW/°C beyond 25°C ambient. At 70°C, power dissipation is limited to 1.6W, consistent with its RDS(on) and thermal resistance profile.

Does IRF7463TRPBF support 3.3V gate drive in practical designs?

Yes-IRF7463TRPBF delivers 20mΩ RDS(on) at VGS = 2.7V and 14A ID, making it functional with 3.3V logic-level gate drivers. However, full performance (8mΩ) requires ≥10V drive; for 3.3V systems, verify that peak current demand stays below 7A to maintain acceptable conduction loss and junction temperature.

How is the SO-8 package thermally enhanced for power dissipation?

The SO-8 package uses pins 1–4 and 6–7 as exposed drain terminals, providing direct thermal paths to PCB copper pours. With 1in² of 2oz copper and 6 thermal vias, junction-to-ambient resistance drops from 50°C/W to ~22°C/W. The package outline conforms to JEDEC MS-012AA, ensuring compatibility with standard reflow profiles and pick-and-place equipment.

Can IRF7463TRPBF be used in parallel configurations?

Yes-the dual-die structure and matched RDS(on) characteristics (±10% typical) enable stable current sharing when paralleled. Use individual gate resistors (≤10Ω) and symmetrical PCB routing to minimize imbalance. Derate total current by 15% versus sum of individual ratings to account for thermal coupling between devices on shared copper areas.

IRF7463TRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
3150 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

IRF7463TRPBF FAQ

1.How can I place an order for IRF7463TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7463TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7463TRPBF reliable?

The price and inventory of IRF7463TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7463TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7463TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7463TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7463TRPBF?

IRF7463TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7463TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7463TRPBF?

For technical support, including IRF7463TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7463TRPBF requirements.

6.How does Aetrix verify that IRF7463TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7463TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7463TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7463TRPBF?

All IRF7463TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7463TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7463TRPBF part is unused and in its original packaging.

Return procedure for IRF7463TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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