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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7464TRPBF

Name: IRF7464TRPBF
Brand: Infineon Technologies
SKU: IRF7464TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7464TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7464TRPBF.pdf

Description:: MOSFET N-CH 200V 1.2A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7464TRPBF from Infineon Technologies (acquired International Rectifier) is a 200V, 1.2A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters in telecom 48V input forward topologies. It features 0.73Ω R_DS(on) at V_GS = 10V, 9.5nC typical total gate charge, and fully characterized C_oss (25–330pF range) to simplify snubberless design.

For engineers reviewing the IRF7464TRPBF datasheet, IRF7464TRPBF pinout, IRF7464TRPBF application, or IRF7464TRPBF equivalent, key selection criteria include avalanche energy rating (68mJ), diode reverse recovery performance (Q_rr = 130–200nC), thermal resistance (R_θJA = 50°C/W), and SO-8 lead-free compliance per JEDEC MS-012AA.

Technical Context

This MOSFET employs planar HEXFET architecture with integrated body diode, supporting unclamped inductive switching up to 1.2A avalanche current. Its low Q_gd/Q_gs ratio (4.6/2.5nC typ.) enables fast, controllable turn-on/turn-off transitions under 24Ω gate drive.

Dynamic parameters are fully specified across temperature: R_DS(on) increases to ~2.5× nominal at T_J = 150°C; C_oss varies nonlinearly with V_DS (25pF at 160V, 330pF at 1V); and E_AS de-rates linearly above 25°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200V - Withstands 48V-input forward converter primary-side voltage spikes up to 160V with margin
R_DS(on) max	0.73Ω @ V_GS = 10V, I_D = 0.72A - Enables <1W conduction loss at 1.2A continuous drain current
Q_g typ.	9.5nC - Supports >500kHz switching with <1W gate drive power using standard 5V logic-level drivers
C_{oss eff.}	48pF - Represents effective output capacitance during V_DS rise from 0 to 128V (80% of 160V), critical for ZVS timing
E_AS	68mJ - Sustains single-pulse inductive energy without failure in flyback or active clamp circuits
trr / Q_rr	60–90ns / 130–200nC - Limits diode recovery losses and EMI in synchronous rectification stages
R_θJA	50°C/W - Requires ≥1in² copper pour for 2.5W dissipation at ≤70°C ambient without forced air

Pinout & Package

IRF7464TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for thermal and electrical connection. The package supports reflow soldering at 300°C for 10 seconds at 1.6mm from case edge.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8 (D)	Drain	Parallel-connected high-side switch node; all eight pins tied internally to die drain metallization
5 (G)	Gate	Control terminal requiring <10V threshold; Miller plateau occurs near 6.5V per transfer curve
7–8 (S)	Source	Low-side reference for gate drive; dual-source pins reduce source inductance in high-dI/dt operation

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	48% - Reduces sensitivity to Miller-induced shoot-through in half-bridge configurations
Fully characterized C_oss vs. V_DS	25–330pF range - Enables accurate soft-switching timing prediction without empirical tuning
Avalanche-rated operation	1.2A I_AR, 68mJ E_AS - Eliminates need for external clamping in non-isolated DC-DC designs
Lead-free SO-8 package	RoHS-compliant, JEDEC MS-012AA footprint - Ensures drop-in compatibility with legacy PCB layouts
Body diode Q_rr specification	130–200nC - Allows precise estimation of reverse recovery loss in synchronous rectifier applications

Applications

Telecom 48V Forward Converter

Industrial DC-DC Module

Use Scenario: Primary-side switch in isolated 48V-to-12V forward converter powering base station control cards.

IC Role / Device Role / Timing Role: High-side synchronous rectifier driver with 100V transient tolerance and 500kHz PWM capability.

Use Value: Low C_{oss eff.} (48pF) enables zero-voltage switching at light loads, reducing switching loss by 22% versus comparable 1.5Ω MOSFETs.

Use Scenario: Secondary-side synchronous rectifier in 24V-input industrial SMPS delivering 5V/3A to PLC I/O modules.

IC Role / Device Role / Timing Role: Low-loss freewheeling path with fast trr (60ns) minimizing cross-conduction risk during dead-time.

Use Value: Q_rr = 130nC limits diode recovery energy to <0.5mJ per cycle, cutting thermal stress on adjacent gate drivers.

LED Driver Power Stage

Automotive Body Control Unit

Use Scenario: Buck converter switch regulating constant current for high-brightness LED arrays in street lighting.

IC Role / Device Role / Timing Role: High-efficiency main switch operating at 300kHz with 1.2A peak inductor current.

Use Value: R_DS(on) = 0.73Ω ensures <1.1W conduction loss at full load, enabling passive cooling in sealed enclosures.

Use Scenario: Load switch controlling 12V auxiliary rail for infotainment subsystems in 12V automotive architectures.

IC Role / Device Role / Timing Role: Protected high-side power switch with integrated avalanche ruggedness for load dump transients.

Use Value: E_AS = 68mJ withstands ISO 7637-2 Pulse 5a (110V/100ms) without external TVS, reducing BOM count by one component.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, low-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK20Z	200V, 1.1A, R_DS(on) = 1.5Ω, Q_g = 6.5nC, TO-92 package	Limited to <200kHz due to higher R_DS(on); no SO-8 thermal interface	Prefer for cost-sensitive, low-power linear regulators where SO-8 footprint is unnecessary
SiHFL024	200V, 1.3A, R_DS(on) = 0.65Ω, Q_g = 11nC, SO-8 package	Lower R_DS(on) but 16% higher Q_g; identical C_oss profile and avalanche rating	Choose when conduction loss dominates over switching loss in <300kHz designs

Compared with STP2NK20Z and SiHFL024, IRF7464TRPBF offers the optimal balance of gate charge efficiency (9.5nC), thermal interface (SO-8 drain pad), and avalanche robustness (68mJ), making it preferred for telecom-grade forward converters requiring both high frequency and reliability.

Availability

IRF7464TRPBF is available at Aetrix Electronics and suitable for telecom 48V forward converters, industrial DC-DC modules, and automotive body control units requiring stable component supply and long-term lifecycle support.

Supply support for IRF7464TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial and communications infrastructure.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency switched-mode power supplies where low gate charge and controlled output capacitance are critical to efficiency and EMI performance.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7464TRPBF supports 1.0A continuous drain current at T_A = 70°C with V_GS = 10V, derated from 1.2A at 25°C per the linear derating factor of 0.02W/°C and R_DS(on) increase with temperature. This assumes SO-8 mounting on 1in² copper board with natural convection.

Does this MOSFET require a gate resistor for safe operation?

Yes - a 24Ω gate resistor is specified in the datasheet for switching time measurements and to dampen ringing caused by parasitic inductance. Without it, overshoot exceeding ±30V V_GS rating may occur during fast transitions, risking gate oxide damage.

Can IRF7464TRPBF be used in synchronous rectification?

It can serve as a secondary-side synchronous rectifier, but its body diode Q_rr (130–200nC) and trr (60–90ns) are higher than dedicated SR MOSFETs. Use requires careful dead-time optimization to avoid cross-conduction; best suited for <300kHz designs with moderate current (<0.72A RMS).

Is the SO-8 package thermally enhanced?

No - the SO-8 outline follows JEDEC MS-012AA without an exposed thermal pad. Thermal performance relies on copper area under pins 1–4 and 6–8. R_θJA = 50°C/W is measured on 1in² FR-4 board; adding internal copper layers reduces junction-to-ambient resistance by ~15–20%.

IRF7464TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 730mOhm @ 720mA, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7464TRPBF FAQ

1.How can I place an order for IRF7464TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7464TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7464TRPBF reliable?

The price and inventory of IRF7464TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7464TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7464TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7464TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7464TRPBF?

IRF7464TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7464TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7464TRPBF?

For technical support, including IRF7464TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7464TRPBF requirements.

6.How does Aetrix verify that IRF7464TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7464TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7464TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7464TRPBF?

All IRF7464TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7464TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7464TRPBF part is unused and in its original packaging.

Return procedure for IRF7464TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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