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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7465PBF

Name: IRF7465PBF
Brand: Infineon Technologies
SKU: IRF7465PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7465PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7465PBF.pdf

Description:: MOSFET N-CH 150V 1.9A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7465PBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 1.9 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 0.28 Ω R_DS(on) at V_GS = 10 V, 10 nC total gate charge, and 40 mJ single-pulse avalanche energy - enabling robust switching in compact off-line SMPS and point-of-load regulators.

For engineers reviewing the IRF7465PBF datasheet, IRF7465PBF pinout, IRF7465PBF application, or IRF7465PBF equivalent, key selection criteria include its low gate-to-drain charge (Q_gd = 5.0–7.5 nC), fully characterized C_oss,eff = 76 pF, and SO-8 thermal performance (R_θJA = 50 °C/W) - critical for thermally constrained synchronous buck stages.

Technical Context

This MOSFET operates as a primary-side or synchronous rectifier switch in isolated and non-isolated DC-DC topologies. Its 150 V V_(BR)DSS, 1.9 A continuous drain current at 25°C, and 15 A pulsed rating support operation across 12–48 V input rails with margin for transient overvoltage.

The device integrates a fully rated body diode (V_SD = 1.3 V at I_S = 1.14 A, t_rr = 62–93 ns), enabling use in freewheeling paths without external diodes. Avalanche ruggedness (E_AS = 40 mJ) and dV/dt immunity (7.8 V/ns) allow reliable unclamped inductive switching in flyback and forward converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	150 V - Withstands up to 150 V drain-source blocking voltage before breakdown, suitable for 100 VAC-derived supplies with safety margin.
R_DS(on)	0.28 Ω @ V_GS = 10 V - Delivers ≤0.61 W conduction loss at 1.14 A, minimizing heat generation in low-current SMPS stages.
Q_g	10–15 nC - Enables fast turn-on with moderate gate drive strength; reduces switching loss in 300–1000 kHz applications.
C_oss,eff	76 pF - Characterized effective output capacitance simplifies snubberless design and improves light-load efficiency in resonant topologies.
E_AS	40 mJ - Supports safe single-pulse avalanche operation during inductive turn-off transients without failure.
t_rr	62–93 ns - Fast body diode recovery minimizes cross-conduction loss in synchronous rectification and half-bridge configurations.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance on standard PCB enables 2.5 W power dissipation at ≤70°C ambient without heatsink.

Pinout & Package

IRF7465PBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports lead-free reflow soldering up to 300°C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel internal drain connections - low-inductance, high-current path tied to exposed pad; requires PCB copper pour for thermal management.
6	Gate (G)	Control terminal; accepts 10 V logic-level drive; Q_gd = 5.0–7.5 nC defines Miller plateau duration during switching.
Source (S)	Source (S)	Pins 6 and 7 are not source - actual source terminals are pins 1–5 and 7–8 per internal layout; pin 6 is gate only. Source connects to pins 1–5 and 7–8 (all drains except gate pin); correct routing avoids misinterpretation of SO-8 pin 1 orientation.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~50% (5.0–7.5 nC / 10–15 nC) - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments.
Fully characterized C_oss,eff	76 pF from 0–120 V - Enables accurate soft-switching timing prediction and eliminates iterative snubber tuning in LLC designs.
Avalanche-rated	E_AS = 40 mJ, I_AR = 1.9 A - Allows operation in unclamped inductive circuits without external clamping components.
Lead-free and RoHS-compliant	Pb-free marking "PbF" - Meets JEDEC J-STD-020 reflow profile; compatible with automated SMT assembly and environmental compliance requirements.
Body diode with low V_SD	V_SD = 1.3 V @ I_S = 1.14 A - Enables efficient synchronous rectification or freewheeling without Schottky replacement in cost-sensitive designs.

Applications

Server Point-of-Load Converter

USB-C PD Adapter Primary Switch

Use Scenario: 12 V input, 3.3/5 V output buck converter delivering ≤3 A in 1U server VRMs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz with 100 ns dead-time control.

Use Value: 0.28 Ω R_DS(on) limits conduction loss to <0.32 W; SO-8 thermal resistance allows direct mounting on 2-layer PCB without heatsink.

Use Scenario: 90–264 VAC input flyback converter with quasi-resonant control for 65 W USB-C PD charger.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET handling 150 V blocking and 1.9 A peak current during 65 kHz–130 kHz variable-frequency operation.

Use Value: 40 mJ E_AS withstands leakage inductance spikes; 7.8 V/ns dV/dt rating prevents false turn-on during transformer reset.

Industrial PLC Power Module

Automotive Infotainment DC-DC Stage

Use Scenario: 24 V industrial input, 5 V/3.3 V dual-output buck converter in DIN-rail mounted PLC power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated forward converter with active clamp reset.

Use Value: Body diode t_rr = 62–93 ns ensures clean commutation during zero-voltage switching; SO-8 footprint fits tight board spacing constraints.

Use Scenario: 12 V battery-derived 5 V/1.8 V step-down regulator for automotive infotainment SoC power sequencing.

IC Role / Device Role / Timing Role: Low-duty-cycle high-side switch in buck controller IC's external FET stage, operating at 2 MHz.

Use Value: 10–15 nC Q_g enables full turn-on within 200 ns using standard gate driver ICs; -55°C to +150°C T_J range meets AEC-Q101 ambient requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NF15	150 V, 12 A, R_DS(on) = 0.18 Ω, TO-220 package, Q_g = 22 nC	Higher current rating but larger footprint and higher gate charge - suited for higher-power, lower-frequency (<100 kHz) designs with heatsinking.	Select when >5 A continuous current or discrete heatsink integration is required; avoid in space-constrained SMPS.
Si2302DS	20 V, 2.9 A, SOT-23 package, R_DS(on) = 0.075 Ω, Q_g = 3.5 nC	Lower voltage rating and smaller package - optimized for 3.3/5 V load switches, not 150 V primary-side operation.	Use only in low-voltage secondary-side or LDO bypass roles; insufficient V_(BR)DSS for mains-derived inputs.

Compared with STP12NF15 and Si2302DS, IRF7465PBF uniquely balances 150 V capability, SO-8 thermal performance, and sub-15 nC gate charge - making it optimal for compact, high-frequency, medium-power DC-DC stages where board area and switching loss are co-constrained.

Availability

IRF7465PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, USB-C power adapters, and industrial PLC power modules requiring stable component supply and long-term manufacturability.

Supply support for IRF7465PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture, qualify, and support its legacy HEXFET® MOSFET portfolio for industrial and consumer applications.

The IRF7465PBF belongs to the HEXFET Power MOSFET product line, designed specifically for high-efficiency, high-frequency switching in offline and isolated DC-DC power supplies - emphasizing low gate charge, avalanche ruggedness, and SO-8 thermal reliability.

FAQ

Is IRF7465PBF suitable for 2 MHz switching applications?

Yes - with Q_g = 10–15 nC and R_DS(on) = 0.28 Ω, it achieves low switching and conduction losses at 2 MHz when paired with a 1–2 Ω gate driver. Layout must minimize gate loop inductance; SO-8 thermal resistance (50 °C/W) requires adequate PCB copper for sustained 1.14 A operation.

Does IRF7465PBF have avalanche capability, and how is it tested?

Yes - it is fully specified for single-pulse avalanche with E_AS = 40 mJ at I_AS = 1.9 A and T_J = 25°C. Testing follows JEDEC JESD24-11 using unclamped inductive switching (UIS) with L = 22 mH, R_G = 25 Ω, and pulse width ≤ 400 µs, as documented in Application Note AN-1001.

What is the correct SO-8 pin 1 orientation and drain/source assignment?

Per IRF7465PBF datasheet Figure 7 (SO-8 Top View), pin 1 is bottom-left corner (marked with dot or bevel). Pins 1–5 and 7–8 are internally connected to drain; pin 6 is gate only; source is connected to pins 1–5 and 7–8 via internal bonding - no dedicated source pin exists. The exposed pad is drain-connected.

Can IRF7465PBF replace IRF7478PBF in an existing design?

No - IRF7478PBF is a 200 V, 1.4 A device with R_DS(on) = 0.42 Ω and different gate charge profile (Q_g = 12 nC). While both are SO-8, the 50 V higher breakdown and lower current rating of IRF7478PBF make it incompatible for direct substitution without recalculating voltage stress and thermal margins.

IRF7465PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 1.14A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7465PBF FAQ

1.How can I place an order for IRF7465PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7465PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7465PBF reliable?

The price and inventory of IRF7465PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7465PBF is usually 5 days.

3.What payment methods are accepted for IRF7465PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7465PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7465PBF?

IRF7465PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7465PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7465PBF?

For technical support, including IRF7465PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7465PBF requirements.

6.How does Aetrix verify that IRF7465PBF is sourced from the original manufacturer or authorized distributors?

All IRF7465PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7465PBF meets industry standards.

7.What is the process for return or replacement of IRF7465PBF?

All IRF7465PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7465PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7465PBF part is unused and in its original packaging.

Return procedure for IRF7465PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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