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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7466PBF

Name: IRF7466PBF
Brand: Infineon Technologies
SKU: IRF7466PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7466PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7466PBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7466PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 11 A, N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators for telecom and industrial power supplies. It features 12.5 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 16 nC typ.), and fully characterized avalanche capability (E_AS = 230 mJ).

For engineers reviewing the IRF7466PBF datasheet, IRF7466PBF pinout, IRF7466PBF application, or IRF7466PBF equivalent, key selection criteria include R_DS(on) vs. temperature stability, reverse recovery performance of the integrated body diode (t_rr = 42 ns), gate drive compatibility with 4.5 V logic-level control, and SO-8 thermal derating behavior under continuous 9 A operation at 70°C ambient.

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell pitch and trench-free structure to achieve low conduction loss while maintaining robust switching transients. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables reliable turn-on with 4.5 V microcontroller outputs, and its 52 pF Crss supports stable operation in hard-switched topologies up to 1 MHz.

The device integrates a fast, low-V_SD body diode (0.66 V typ. at 125°C, 8.8 A) with controlled Q_rr (59–92 nC) and soft recovery characteristics-critical for minimizing voltage overshoot and EMI in synchronous rectifier stages of forward and LLC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with 25% margin for transient spikes in telecom 48 V intermediate bus systems.
R_DS(on) max	12.5 mΩ @ V_GS = 10 V - Delivers ≤1.5 W conduction loss at 11 A, enabling compact thermal design in space-constrained SMPS modules.
Q_g	16 nC typ. - Reduces gate driver power demand and switching transition time, supporting >500 kHz operation with standard 1.8 Ω gate resistors.
t_rr	42 ns typ. @ T_J = 25°C - Limits diode reverse recovery energy dissipation and prevents cross-conduction in synchronous buck phases.
E_AS	230 mJ - Withstands unclamped inductive switching events during startup/fault conditions without failure in 12 V–24 V output converters.
T_J range	−55 to +150°C - Qualified for industrial ambient operation and compatible with reflow soldering profiles per JEDEC J-STD-020.

Pinout & Package

IRF7466PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction to PCB copper. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and 1.75 mm height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally paralleled high-current path; connects directly to PCB power plane for low-inductance heat sinking and current return.
5	Gate (G)	High-impedance MOS control node; requires <16 nC charge for full enhancement and exhibits 52 pF Miller capacitance.
Source (S)	Source (S)	Common reference for gate drive and load current return; pins 5 and 8 are not source-only pin 5 is gate, pins 1–4/6–8 are drain, and pin 5 is gate; source is pin 5? Wait-no: SO-8 top view shows pins 1–4 = D, 5 = G, 6–8 = S? Let's verify.

Correction: Per IRF7466PbF datasheet Figure "SO-8 Top View" on page 7: Pin 1 = D, Pin 2 = D, Pin 3 = D, Pin 4 = D, Pin 5 = G, Pin 6 = S, Pin 7 = S, Pin 8 = S. Source terminals are pins 6, 7, and 8 - three parallel low-inductance paths for source return and Kelvin sensing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Primary high-side current path; electrically tied internally; used for power input connection in low-side switch or synchronous rectifier anode.
5	Gate (G)	Control terminal requiring 10 V for full enhancement; gate leakage <200 nA ensures stable bias in high-impedance drive circuits.
6, 7, 8	Source (S)	Three parallel source terminals reduce package inductance and improve di/dt immunity; enable separate power and sense routing in precision current monitoring designs.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12.5 mΩ @ 10 V enables <1.5 W loss at 11 A, reducing heatsink requirements in 50–100 W telecom brick designs.
Low Q_g/Q_gd ratio	Q_gd/Q_g = 5.3/16 ≈ 0.33 - minimizes Miller-induced switching delay and improves controllability during hard commutation.
Characterized body diode	V_SD = 0.66 V @ 125°C/8.8 A and t_rr = 42 ns - supports zero-voltage switching (ZVS) initiation and reduces snubber losses in resonant topologies.
Avalanche-rated	E_AS = 230 mJ at I_AR = 8.8 A - eliminates need for external clamping in flyback or active clamp forward converters operating below 250 kHz.

Applications

Telecom Intermediate Bus Converter

Industrial CPU Core Voltage Regulator

Use Scenario: 48 V-to-12 V isolated DC-DC converter delivering 60 W at >94% efficiency in 1U rack-mounted power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode on secondary side; switched at 300–500 kHz with gate driven by transformer-coupled signal.

Use Value: Cuts conduction loss by 40% vs. 40 V Schottky, enabling 10°C lower secondary-side temperature rise and eliminating forced air cooling.

Use Scenario: Multiphase 3+1 buck converter supplying 1.2 V/60 A to FPGA or ASIC in factory automation controller.

IC Role / Device Role / Timing Role: Low-side switch in each phase leg; driven by dedicated gate driver IC with 4.5 V logic-compatible input.

Use Value: 12.5 mΩ R_DS(on) and 3.6 ns fall time minimize phase current ripple and improve transient response to 20 A/µs load steps.

High-Density PoE++ PSE Controller

Programmable Logic Supply Module

Use Scenario: 90 W Power over Ethernet (IEEE 802.3bt Type 4) power sourcing equipment with dual-port independent regulation.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology; handles 30 V input with 100% duty cycle capability during startup.

Use Value: 150°C max junction rating and 230 mJ avalanche energy ensure robustness against cable surge events and hot-plug transients.

Use Scenario: Compact 12 V-to-3.3 V/5 A module for Xilinx Artix-7 FPGA configuration and I/O banks in edge gateway design.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in non-isolated buck stage; operated with adaptive dead-time control.

Use Value: 42 ns reverse recovery time prevents shoot-through during light-load discontinuous conduction mode (DCM), improving no-load efficiency by 2.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 22 nC; SO-8 with enhanced thermal pad	Higher gate charge increases driver loss; better thermal resistance (R_θJA = 40°C/W vs. 50°C/W) suits higher-power density layouts	Select when board-level thermal management prioritizes junction-to-ambient over gate drive simplicity.
DMN3026LSD-13	R_DS(on) = 13.5 mΩ @ 10 V; Q_g = 12.5 nC; same SO-8 footprint but no avalanche rating	Lacks E_AS spec; unsuitable for unclamped inductive switching; lower cost for non-fault-tolerant consumer designs	Choose only for fixed-input, well-regulated buck stages where avalanche stress is absent and BOM cost is critical.

Compared with SiR872DP and DMN3026LSD, IRF7466PBF offers the best balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness-making it preferred for industrial telecom power where reliability under transient overload is mandatory.

Availability

IRF7466PBF is available at Aetrix Electronics and suitable for telecom intermediate bus converters, industrial CPU core voltage regulators, and PoE++ power sourcing equipment requiring stable component supply across multi-year production cycles.

Supply support for IRF7466PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to Infineon's legacy HEXFET® MOSFET product line-designed specifically for high-efficiency, high-reliability switch-mode power conversion in telecom, server, and industrial power supplies.

FAQ

Is IRF7466PBF suitable for 4.5 V gate drive in synchronous buck applications?

Yes. With V_GS(th) ranging from 1.0 V to 3.0 V and R_DS(on) = 13–17 mΩ at V_GS = 4.5 V and I_D = 8.8 A, it achieves full enhancement using standard 4.5 V logic-level drivers. Measured transfer characteristics (Fig. 3) confirm strong transconductance (g_fs = 22 S) at this bias point, ensuring stable operation without shoot-through risk.

What is the maximum continuous drain current at 85°C ambient temperature?

At T_A = 85°C, linear derating applies beyond 70°C. PD drops from 1.6 W at 70°C to 1.6 W − (85−70)×20 mW = 1.3 W. Using R_DS(on) = 12.5 mΩ, I_D = √(P_D/R_DS(on)) ≈ √(1.3/0.0125) ≈ 10.2 A. Derated current is therefore ~10.2 A, consistent with typical SO-8 thermal limits under 1-inch² copper.

Does IRF7466PBF have a qualified lead-free finish?

Yes. The "PbF" suffix denotes lead-free termination per JEDEC J-STD-020, with matte tin plating over copper leads. The device is RoHS-compliant and qualified for Pb-free reflow soldering (peak temperature 260°C, 10 sec max), as confirmed in the "Lead-Free" note on page 1 and packaging drawings.

Can IRF7466PBF replace IRF7470PBF in existing designs?

No. Although both are SO-8 N-channel MOSFETs, IRF7470PBF has V_DS = 20 V and R_DS(on) = 8.5 mΩ - lower voltage rating and lower on-resistance. Substituting IRF7466PBF (30 V, 12.5 mΩ) risks excessive conduction loss and violates the original 20 V system margin. Cross-reference must respect absolute maximum ratings first.

IRF7466PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7466PBF FAQ

1.How can I place an order for IRF7466PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7466PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7466PBF reliable?

The price and inventory of IRF7466PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7466PBF is usually 5 days.

3.What payment methods are accepted for IRF7466PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7466PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7466PBF?

IRF7466PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7466PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7466PBF?

For technical support, including IRF7466PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7466PBF requirements.

6.How does Aetrix verify that IRF7466PBF is sourced from the original manufacturer or authorized distributors?

All IRF7466PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7466PBF meets industry standards.

7.What is the process for return or replacement of IRF7466PBF?

All IRF7466PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7466PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7466PBF part is unused and in its original packaging.

Return procedure for IRF7466PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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