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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7466TRPBF

Name: IRF7466TRPBF
Brand: Infineon Technologies
SKU: IRF7466TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7466TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7466TRPBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7466TRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 11 A, N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It features 12.5 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 16–23 nC), and fully characterized avalanche capability (E_AS = 230 mJ). Used in telecom power supplies and CPU VRMs.

For engineers reviewing the IRF7466TRPBF datasheet, IRF7466TRPBF pinout, IRF7466TRPBF application, or IRF7466TRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V (13–17 mΩ), reverse recovery performance (t_rr = 42–63 ns), thermal resistance (R_θJA = 50 °C/W), and SO-8 lead-free compliance.

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell pitch and trench-assisted channel design to achieve low conduction loss and fast switching. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables robust 4.5 V logic-level drive, while the low C_iss (2100 pF) and C_rss (52 pF) support high-frequency operation up to 1 MHz in hard-switched topologies.

The device integrates a co-packaged body diode with low forward voltage (V_SD = 0.66–1.3 V) and controlled reverse recovery (Q_rr = 59–92 nC), enabling efficient synchronous rectification without external Schottky diodes. Avalanche ruggedness is validated per JEDEC JESD24-11, supporting unclamped inductive switching up to I_AR = 8.8 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input bus applications with margin
R_DS(on) @ V_GS = 10 V	12.5 mΩ - Enables ≤1.5 W conduction loss at 11 A continuous current
R_DS(on) @ V_GS = 4.5 V	13–17 mΩ - Supports direct drive from 5 V or 4.5 V PWM controllers
Q_g	16–23 nC - Reduces gate drive power and enables <100 ns turn-on delay
t_rr	42–63 ns - Limits switching loss and EMI during body diode commutation
E_AS	230 mJ - Withstands single-pulse inductive energy without failure in VRM hot-swap
R_θJA	50 °C/W - Requires minimal copper area (≥1 in²) for 2.5 W dissipation at T_A = 25 °C

Pinout & Package

IRF7466TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction. The package supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected high-current output path; pins 1–4 and 6–8 are internally tied to common drain metallization
5	Gate (G)	Control terminal requiring <23 nC charge for full enhancement; sensitive to ESD (±20 V rating)
Source (S)	Source (S)	Reference node for gate drive and current sensing; pins 5 and 8 are source terminals in dual-source configuration

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	13–17 mΩ enables direct interface with 5 V microcontrollers and PWM ICs without level-shifting
Low Q_gd/Q_g ratio	5.3–8.0 nC / 16–23 nC minimizes Miller-induced shoot-through risk in half-bridge configurations
Characterized body diode	Q_rr = 59–92 nC and t_rr = 42–63 ns allow predictable timing for synchronous rectifier control
Avalanche-rated	230 mJ single-pulse energy rating supports robust operation under transient overcurrent and inductive load switching

Applications

Telecom DC-DC Converters

CPU Voltage Regulators

Use Scenario: 48 V to 12 V isolated forward converter in base station power modules.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode on secondary side.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving efficiency from 92% to 94.5% at full load.

Use Scenario: Multiphase buck converter supplying 1.0–1.3 V to server CPUs at up to 200 A per phase.

IC Role / Device Role: High-side or low-side switch in interleaved topology with 500 kHz–1 MHz switching.

Use Value: Low Q_g and R_DS(on) cut total switching + conduction loss to <1.8 W per phase at 11 A.

Industrial SMPS

LED Driver Power Stages

Use Scenario: 24 V input, 5 V/10 A output flyback converter for PLC I/O modules.

IC Role / Device Role: Primary-side switch operating in discontinuous conduction mode (DCM).

Use Value: 30 V rating provides 2× safety margin over 24 V rail; avalanche rating eliminates need for snubbers.

Use Scenario: Constant-current buck driver for high-brightness LED strings in street lighting.

IC Role / Device Role: Main switching element controlling LED current via PWM dimming at 1–20 kHz.

Use Value: Low R_DS(on) maintains <0.5°C junction rise at 8.8 A, extending LED lifetime and color stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 11.5 mΩ @ 10 V; Q_g = 26 nC; SO-8 package	Higher gate charge increases drive loss in >500 kHz designs	Preferred when lower R_DS(on) outweighs gate drive overhead
DMN3025LSD-13	R_DS(on) = 25 mΩ @ 4.5 V; Q_g = 12 nC; dual-N SO-8	Higher on-resistance but lower Q_g suits space-constrained 2-phase sync rectifiers	Chosen where board area limits use of discrete dual devices

Compared with IRF7466TRPBF, Si7852DP-T1-GE3 offers lower conduction loss but higher switching loss due to +3 nC Q_g, while DMN3025LSD-13 trades 100% higher R_DS(on) for reduced gate drive complexity in compact dual-FET layouts.

Availability

IRF7466TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, CPU voltage regulators, and industrial SMPS requiring stable component supply, RoHS-compliant packaging, and verified avalanche performance.

Supply support for IRF7466TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7466TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7466TRPBF supports 9.0 A continuous drain current at T_A = 70°C with V_GS = 10 V, derated from 11 A at 25°C per its linear derating factor of 0.02 mW/°C. This assumes SO-8 mounting on 1 in² FR-4 with 2 oz copper and no forced airflow.

Does this MOSFET require a gate resistor for safe operation?

Yes - a gate resistor (typically 1.8 Ω, as used in the datasheet test circuit) is required to control dV/dt and prevent oscillation during switching. Without it, the low gate impedance and 52 pF Crss can cause ringing, leading to false turn-on or increased EMI in high-speed buck converters.

Can IRF7466TRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (shown in Fig 4) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to avoid dynamic imbalance above 500 kHz switching frequencies.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode is fully characterized with t_rr = 42–63 ns and Q_rr = 59–92 nC at 8.8 A, enabling precise timing of synchronous gate drive signals. Its low V_SD (0.66 V at 125°C) reduces forward loss compared to external Schottky diodes in 12 V output rails.

IRF7466TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.5mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7466TRPBF FAQ

1.How can I place an order for IRF7466TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7466TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7466TRPBF reliable?

The price and inventory of IRF7466TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7466TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7466TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7466TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7466TRPBF?

IRF7466TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7466TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7466TRPBF?

For technical support, including IRF7466TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7466TRPBF requirements.

6.How does Aetrix verify that IRF7466TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7466TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7466TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7466TRPBF?

All IRF7466TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7466TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7466TRPBF part is unused and in its original packaging.

Return procedure for IRF7466TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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