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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7467PBF

Name: IRF7467PBF
Brand: Infineon Technologies
SKU: IRF7467PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7467PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7467PBF.pdf

Description:: MOSFET N-CH 30V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7467PbF from Infineon Technologies (formerly International Rectifier) is a 30 V, 11 A, N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12 mΩ R_DS(on) at V_GS = 4.5 V, supports 90 A pulsed drain current, and features fully characterized avalanche capability (223 mJ E_AS) for robust operation in telecom and industrial SMPS.

For engineers reviewing the IRF7467PbF datasheet, IRF7467PbF pinout, IRF7467PbF application, or IRF7467PbF equivalent, key selection criteria include its low gate charge (21–32 nC), fast switching (t_d(off) = 19 ns), ultra-low R_DS(on) at 4.5 V, body diode reverse recovery performance (Q_rr = 56–96 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high transconductance (g_fs = 28 S) and low input/output capacitances (C_iss = 2530 pF, C_oss = 706 pF). Its gate threshold voltage (V_GS(th) = 0.6–2.0 V) enables reliable turn-on with 3.3 V or 4.5 V logic-level drivers.

The device is characterized for stable R_DS(on) over temperature (0.029 V/°C dV(BR)_DSS/dT_J) and exhibits controlled reverse recovery (t_rr = 40–65 ns, Q_rr = 56–96 nC) under di/dt = 100 A/µs - critical for minimizing switching loss in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom DC-DC stages.
R_DS(on) @ V_GS = 4.5 V	10.6–13.5 mΩ - Enables high-efficiency synchronous rectification at logic-level gate drive without external level-shifting.
I_D @ T_A = 25°C	11 A - Continuous conduction capability sufficient for mid-power (≤100 W) point-of-load converters.
Q_g	21–32 nC - Low total gate charge reduces driver power loss and supports >1 MHz switching in resonant or hard-switched topologies.
E_AS	223 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive switching stress in unclamped inductive loads.
t_r/t_f	2.5 ns / 4.0 ns - Fast rise/fall times minimize overlap loss during PWM transitions in synchronous rectifiers.
R_θJA	50 °C/W - Thermal resistance when mounted on standard PCB; requires thermal pad or copper pour for sustained 9 A operation at 70°C ambient.

Pinout & Package

IRF7467PbF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain paddle for enhanced thermal performance. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and is lead-free (PbF) compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled drain terminals connected to exposed paddle - primary current path and main thermal conduction path to PCB.
6	Gate (G)	Control terminal requiring <±12 V rating; low input capacitance (C_iss = 2530 pF) eases driver design.
Source (S)	Source (S)	Terminals 6 and 7 are not source - Source is pin 6 only; pin 6 connects to internal source metallization and provides reference for gate drive and current sensing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	10.6–13.5 mΩ - Eliminates need for gate boosters in 3.3 V/5 V controller-based synchronous rectifiers.
Fully characterized body diode	t_rr = 40–65 ns, Q_rr = 56–96 nC - Predictable reverse recovery behavior enables accurate dead-time optimization and loss modeling.
Low gate-to-drain charge (Q_gd)	5.8–8.7 nC - Reduces Miller-induced switching delay and improves controllability during hard commutation.
Avalanche-rated	E_AS = 223 mJ, I_AR = 11 A - Withstands repetitive unclamped inductive switching events without degradation in telecom-grade SMPS designs.
SO-8 thermal design	R_θJL = 20 °C/W - Junction-to-drain-lead resistance enables direct thermal coupling to PCB copper, supporting >1.6 W continuous dissipation at T_A = 70°C.

Applications

Telecom DC-DC Converters

Industrial Point-of-Load Supplies

Use Scenario: Secondary-side synchronous rectification in 48 V input, 3.3–12 V output isolated forward or LLC converters for base station power modules.

IC Role / Device Role / Timing Role: High-side or low-side synchronous rectifier switch operating at 200–500 kHz, replacing Schottky diodes to reduce conduction loss.

Use Value: 12 mΩ R_DS(on) at 4.5 V enables >95% efficiency at 10 A load, reducing thermal footprint versus discrete diode solutions.

Use Scenario: Output stage of 24 V input, 5 V/10 A industrial PLC power supply with tight thermal constraints and no forced air cooling.

IC Role / Device Role / Timing Role: Low-voltage power switch in non-isolated buck converter, driven directly by microcontroller GPIO or dedicated gate driver IC.

Use Value: 11 A continuous rating at 25°C ambient and SO-8 thermal design allow full-rated operation on 1-inch² copper area without heatsink.

Server VRM Phase Legs

Automotive ADAS Power Modules

Use Scenario: High-current phase-leg switch in multiphase CPU/GPU VRMs where fast switching and low Q_g reduce driver losses and improve transient response.

IC Role / Device Role / Timing Role: Bottom-FET in synchronous buck cell, switching at ≥1 MHz with 30 ns dead time, leveraging low Q_gd for clean turn-off.

Use Value: 21–32 nC Q_g and 2.5–4.0 ns t_r/t_f enable efficient high-frequency operation while maintaining <100 mV shoot-through margin.

Use Scenario: 12 V input, 3.3 V/5 V auxiliary supply in radar control units requiring AEC-Q101-compliant components and robust ESD/avalanche performance.

IC Role / Device Role / Timing Role: Primary-side switch in isolated flyback or forward converter powering safety-critical sensor interfaces.

Use Value: -55 to +150°C junction range and 223 mJ E_AS support operation across automotive temperature extremes without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-E3	R_DS(on) = 35 mΩ @ 4.5 V; I_D = 3.2 A; SOT-23 package; lower voltage rating (20 V).	Limited to ≤20 V input systems; unsuitable for 24/48 V telecom rails due to V_DS derating.	Select only for space-constrained, low-power (<15 W), low-voltage applications where SO-8 thermal mass is unnecessary.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V but 3.8 mΩ @ 4.5 V; dual-N in SO-8; higher Q_g (36 nC); 30 V rating.	Higher gate charge increases driver loss; dual configuration adds layout complexity for single-switch use cases.	Prefer when dual-switch topology (e.g., half-bridge) is required; avoid for single-switch synchronous rectification where IRF7467PbF's lower Q_g yields better efficiency.

Compared with Si2302DS-T1-E3 and DMN3025LSD-13, IRF7467PbF uniquely balances 11 A current handling, 12 mΩ R_DS(on) at 4.5 V, and 21–32 nC Q_g in a thermally optimized SO-8 - making it optimal for 24–48 V, 50–100 W isolated DC-DC converters where efficiency, thermal headroom, and logic-level drive coexist.

Availability

IRF7467PbF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial point-of-load supplies, and server VRM phase legs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7467PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon MOSFET innovation and industrial reliability standards.

The IRF7467PbF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in isolated and non-isolated DC-DC conversion systems targeting telecom infrastructure and industrial power supplies.

FAQ

Is IRF7467PbF suitable for 3.3 V gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 0.6 V to 2.0 V, and it achieves 10.6–13.5 mΩ R_DS(on) at V_GS = 4.5 V. While not fully enhanced at 3.3 V, typical R_DS(on) remains ≤35 mΩ (per datasheet Fig. 13), enabling marginal but functional operation in low-voltage control circuits with appropriate current derating.

What is the maximum recommended PCB copper area for thermal management?

For continuous 9.0 A operation at T_A = 70°C, the datasheet specifies 1 inch² (645 mm²) of 2 oz copper on the drain-connected layer. This area achieves the rated 1.6 W power dissipation (R_θJA = 50 °C/W). Larger copper pours or internal planes further reduce junction temperature but are not required for nominal operation.

Does IRF7467PbF have integrated ESD protection?

No - the device lacks on-chip ESD protection diodes. Per datasheet Absolute Maximum Ratings, gate-to-source voltage is limited to ±12 V, and gate oxide integrity relies on external circuit protection. Designers must implement series gate resistors and/or TVS clamps to prevent damage during handling or system-level ESD events.

Can IRF7467PbF replace IRF7470PbF in existing designs?

No - although both are SO-8 N-channel MOSFETs, IRF7470PbF has V_DS = 40 V and R_DS(on) = 22 mΩ @ 4.5 V. Substituting IRF7467PbF (30 V, 12 mΩ) risks overvoltage failure in 36–40 V systems and alters gate drive timing due to different Q_g (32 nC vs. 21–32 nC) and C_iss. Electrical and thermal validation is mandatory before substitution.

IRF7467PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2530 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7467PBF FAQ

1.How can I place an order for IRF7467PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7467PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7467PBF reliable?

The price and inventory of IRF7467PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7467PBF is usually 5 days.

3.What payment methods are accepted for IRF7467PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7467PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7467PBF?

IRF7467PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7467PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7467PBF?

For technical support, including IRF7467PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7467PBF requirements.

6.How does Aetrix verify that IRF7467PBF is sourced from the original manufacturer or authorized distributors?

All IRF7467PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7467PBF meets industry standards.

7.What is the process for return or replacement of IRF7467PBF?

All IRF7467PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7467PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7467PBF part is unused and in its original packaging.

Return procedure for IRF7467PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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