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Infineon Technologies IRF7467TRPBF
- Part No.:
- IRF7467TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7467TRPBF.pdf
- Description:
- MOSFET N-CH 30V 11A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,319
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Product details
Overview
IRF7467TRPBF from Infineon Technologies is a 30V, 11A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12 mΩ RDS(on) at VGS = 4.5 V, supports 90 A pulsed drain current, and features fully characterized avalanche capability (223 mJ EAS) for robust operation in telecom and industrial power supplies.
For engineers reviewing the IRF7467TRPBF datasheet, IRF7467TRPBF pinout, IRF7467TRPBF application, or IRF7467TRPBF equivalent, key selection criteria include low gate charge (21–32 nC), fast switching (td(off) = 19 ns), body diode reverse recovery performance (Qrr = 56–96 nC), and thermal resistance (RθJA = 50 °C/W) under standard SO-8 mounting conditions.
Technical Context
This MOSFET employs planar silicon process technology with ultra-low gate impedance and optimized cell layout to minimize conduction and switching losses in hard-switched and resonant topologies. Its RDS(on) remains stable across VGS = 2.8–10 V, enabling reliable operation with 3.3 V and 5 V gate drivers.
The device integrates a fast, low-Qrr body diode with trr ≤ 65 ns and soft recovery characteristics, reducing voltage overshoot and EMI in synchronous buck and forward converters. Avalanche-rated design ensures single-pulse ruggedness up to 11 A IAR without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom PSUs |
| RDS(on) @ VGS = 4.5 V | 10.6–13.5 mΩ - Enables <1 W conduction loss at 9 A continuous in compact SO-8 footprint |
| Qg | 21–32 nC - Low gate drive energy reduces driver IC loading and enables >1 MHz switching |
| td(off) | 19 ns - Supports fast turn-off critical for zero-voltage switching (ZVS) timing control |
| EAS | 223 mJ - Single-pulse avalanche energy rating allows safe operation during inductive fault transients |
| RθJA | 50 °C/W - Thermal resistance measured on 1-inch² copper board; defines heatsinking requirement for 2.5 W PD |
| Qrr | 56–96 nC - Body diode recovery charge directly impacts synchronous rectifier efficiency and shoot-through risk |
Pinout & Package
IRF7467TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The package measures 4.9 × 6.0 mm with 1.27 mm pitch and is lead-free (PbF) compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 (D) | Drain | Parallel-connected drain terminals reduce package inductance and improve current sharing in high-di/dt applications |
| 5 (G) | Gate | Single gate input with low Ciss (2530 pF) and Miller capacitance (Crss = 46 pF) for stable high-speed switching |
| 7–8 (S) | Source | Dual-source connection lowers source inductance, minimizing gate-drive loop oscillation and improving dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 10.6–13.5 mΩ enables efficient operation with 3.3 V microcontroller or ASIC gate drivers |
| Fully characterized avalanche | 223 mJ EAS and 11 A IAR allow unclamped inductive switching without derating or external protection |
| Low Qgd/Qg ratio | 5.8–8.7 nC / 21–32 nC improves Miller immunity and reduces risk of false turn-on during high dV/dt events |
| Soft-recovery body diode | trr = 40–65 ns with low Qrr minimizes switching loss and voltage spike in synchronous rectification |
Applications
| Telecom DC-DC Converters | Industrial SMPS |
|---|---|
Use Scenario: 48 V input to 3.3/5/12 V isolated output in base station power modules. IC Role / Device Role: Synchronous rectifier in secondary-side of active-clamp forward or LLC resonant converter. Use Value: 12 mΩ RDS(on) and low Qrr reduce conduction and recovery losses, improving full-load efficiency by ≥0.8% vs. Schottky alternatives. | Use Scenario: 24 V input to 5 V/3.3 V point-of-load regulator in PLC and motor drive control boards. IC Role / Device Role: High-side switch in non-isolated buck converter with integrated controller. Use Value: 30 V VDS rating provides 2× safety margin over 24 V rail; SO-8 footprint simplifies layout and thermal management. |
| Server VRMs | Automotive ADAS Power Supplies |
Use Scenario: CPU/GPU core voltage regulation using multiphase buck topology with digital PWM controllers. IC Role / Device Role: Low-side synchronous FET in 300 kHz–1 MHz phase-leg configuration. Use Value: Fast td(off) (19 ns) and low Coss (706 pF) support precise dead-time control and minimize shoot-through risk. | Use Scenario: 12 V battery-fed 5 V/3.3 V supply for camera modules and radar processors in ADAS ECUs. IC Role / Device Role: Input protection switch and load switch in always-on power domain. Use Value: -55 to +150 °C operating range and 100 µA IDSS at 125 °C ensure reliability in under-hood thermal environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 11.5 mΩ @ 4.5 V; Qg = 26 nC; SO-8 package | Higher Ciss (2800 pF) and lower EAS (140 mJ); not rated for repetitive avalanche | Preferred where gate drive strength exceeds 1 A and avalanche stress is absent |
| DMN3025LSD-13 | RDS(on) = 13.5 mΩ @ 4.5 V; Qg = 22 nC; dual-N SO-8 with common source | Integrated dual-FET structure increases layout density but limits independent gate control | Suitable for half-bridge or complementary switching where space is constrained |
Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7467TRPBF offers superior avalanche ruggedness and lower Qgd, making it preferred for unclamped inductive loads and ZVS designs-while its higher RDS(on) tolerance at elevated temperature supports wider ambient operating ranges.
Availability
IRF7467TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF7467TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
The IRF7467TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in telecom infrastructure, industrial automation, and computing power supplies.
FAQ
What is the maximum continuous drain current at 70°C case temperature?
The IRF7467TRPBF supports 9.0 A continuous drain current at TA = 70°C with VGS = 10 V, verified per Absolute Maximum Ratings table. Derating follows linear factor of 0.02 W/°C above 70°C ambient, limiting usable current in thermally constrained layouts.
Does this MOSFET require a gate resistor for stability in high-speed switching?
Yes-a gate resistor (typically 1.8 Ω, as used in switching time test circuits) is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. Without it, overshoot and false turn-on may occur due to high dV/dt (>10 V/ns) in hard-switched topologies.
Can IRF7467TRPBF be used as a replacement for IRF7467PbF?
Yes-IRF7467TRPBF is the tape-and-reel packaging variant of IRF7467PbF, sharing identical electrical specifications, SO-8 footprint, and thermal characteristics. The "TR" suffix denotes reel packaging; no functional or parametric differences exist between the two part numbers.
Is the body diode suitable for freewheeling in non-synchronous applications?
The integrated body diode has trr = 40–65 ns and Qrr = 56–96 nC, making it viable for low-frequency freewheeling (≤100 kHz), but not optimal for high-frequency operation due to recovery losses. For best efficiency, use only in synchronous rectification mode with controlled gate timing.
IRF7467TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.8V, 10V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2530 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7467TRPBF FAQ
1.How can I place an order for IRF7467TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7467TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7467TRPBF reliable?
The price and inventory of IRF7467TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7467TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7467TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7467TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7467TRPBF?
IRF7467TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7467TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7467TRPBF?
For technical support, including IRF7467TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7467TRPBF requirements.
6.How does Aetrix verify that IRF7467TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7467TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7467TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7467TRPBF?
All IRF7467TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7467TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7467TRPBF part is unused and in its original packaging.
Return procedure for IRF7467TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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