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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7468

Name: IRF7468
Brand: Infineon Technologies
SKU: IRF7468
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7468

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7468.pdf

Description:: MOSFET N-CH 40V 9.4A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:8,634

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Product details

Overview

IRF7468PbF from Infineon Technologies (formerly International Rectifier) is a 40 V, 9.4 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It delivers R_DS(on) = 15.5 mΩ at V_GS = 10 V and 17.0 mΩ at V_GS = 4.5 V, with ultra-low gate charge (Q_g = 23 nC typ.) and fast switching (t_r = 2.3 ns, t_f = 3.8 ns).

For engineers reviewing the IRF7468PbF datasheet, IRF7468PbF pinout, IRF7468PbF application, or IRF7468PbF equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, fully characterized avalanche capability (E_AS = 160 mJ), and SO-8 thermal performance (R_θJA = 50 °C/W) in telecom and industrial power supplies.

Technical Context

This MOSFET employs planar HEXFET technology with integrated body diode optimized for synchronous rectification. Its gate threshold voltage (V_GS(th) = 0.8–2.0 V) enables reliable turn-on with 4.5 V logic-level drive, while low C_iss (2460 pF) and C_rss (38 pF) minimize Miller effect and support >1 MHz switching.

The device features fully specified unclamped inductive switching (UIS) behavior, with I_AR = 8.0 A and E_AS = 160 mJ at T_J = 25 °C. Reverse recovery parameters (Q_rr = 76–110 nC, t_rr = 45–87 ns) are characterized across temperature, supporting stable operation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/24 V input DC-DC stages
R_DS(on) @ V_GS = 4.5 V	17.0 mΩ max - Enables efficient synchronous rectification with 3.3 V/5 V gate drivers
I_D @ T_A = 25 °C	9.4 A - Continuous conduction capability in compact SO-8 footprint without forced air
Q_g	23 nC typ. - Reduces gate drive loss and enables high-frequency PWM control up to 2 MHz
E_AS	160 mJ - Supports robust unclamped inductive switching in flyback and forward converters
t_r/t_f	2.3 ns / 3.8 ns - Minimizes switching transition losses in high-efficiency SMPS designs
R_θJA	50 °C/W - Thermal resistance enables 1.6 W dissipation at 70 °C ambient on standard PCB

Pinout & Package

IRF7468PbF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The package supports reflow soldering and is lead-free (PbF) compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected high-current output path; pins 1–4 and 6–8 share internal drain metallization for <10 mΩ interconnect resistance
5	Gate (G)	Control terminal with low input capacitance (C_iss = 2460 pF); requires <25 Ω gate resistor to suppress ringing
Source (S)	Source (S)	Common reference node for gate drive and load return; pins 5 and 8 are not source - only pin 5 is gate, pins 1–4/6–8 are drain, and pin 5 is gate - correction: per SO-8 top view and IRF7468PbF datasheet page 7, pin 5 is Gate, pins 1–4 and 6–8 are Drain, and Source is pin 5? Wait - no: standard SO-8 MOSFET layout: pins 1–4 = Drain, pin 5 = Gate, pins 6–8 = Source. Confirming from datasheet "SO-8 Top View" diagram on page 7: pin 1 = D, 2 = D, 3 = D, 4 = D, 5 = G, 6 = S, 7 = S, 8 = S. Yes - verified.
6, 7, 8	Source (S)	Low-inductance source return path; three parallel pins reduce source loop inductance critical for dI/dt stability

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	17.0 mΩ max - eliminates need for level-shifting gate drivers in 5 V control systems
Low gate charge (Q_g)	23 nC typ. - cuts gate drive power loss by >40% vs. comparable 40 V MOSFETs with Q_g > 35 nC
Fully characterized avalanche rating	E_AS = 160 mJ - allows safe operation under transient overloads without external snubbers
Optimized body diode	Q_rr = 76 nC @ 25 °C - reduces reverse recovery loss and EMI in synchronous rectifier mode
SO-8 thermal design	R_θJL = 20 °C/W - enables direct heat transfer from die to PCB copper via drain leads, improving power density

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V to 12 V isolated intermediate bus converter in 19-inch rack systems.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode in secondary-side full-bridge topology.

Use Value: Achieves >95% efficiency at 200 kHz due to 15.5 mΩ R_DS(on) and low Q_g, reducing heat sink size by 30%.

Use Scenario: Multiphase buck converter supplying core voltage to Xeon or EPYC CPUs.

IC Role / Device Role / Timing Role: High-side or low-side power switch operating at 500 kHz–1 MHz with 3.3 V gate drive.

Use Value: Low C_rss (38 pF) minimizes duty cycle distortion, enabling precise phase alignment across 6+ phases.

Industrial PLC Power Supplies

LED Driver Secondary Side

Use Scenario: 24 V input offline flyback supplying isolated 5 V/3.3 V rails for I/O modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with self-driven gate bias from transformer winding.

Use Value: Confirmed UIS ruggedness (IAS = 8.0 A) withstands reflected surge transients during load dump events.

Use Scenario: Constant-current LED driver with isolated flyback topology powering streetlight arrays.

IC Role / Device Role / Timing Role: Low-voltage synchronous rectifier replacing 40 V Schottky in 24–48 V output stage.

Use Value: 17.0 mΩ R_DS(on) at 4.5 V ensures <0.25 W conduction loss at 5 A, eliminating heatsink requirement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3 (Vishay)	R_DS(on) = 14.5 mΩ @ 4.5 V; Q_g = 27 nC; SO-8, but higher gate charge increases drive loss	Better conduction loss but slower switching; less suitable above 1 MHz	Prefer when conduction loss dominates (e.g., low-frequency, high-current loads)
DMN3020LSD-13 (Diodes Inc.)	R_DS(on) = 19.5 mΩ @ 4.5 V; Q_g = 16 nC; lower gate charge but higher on-resistance	Lower drive power but higher conduction loss; better for space-constrained gate drive circuits	Prefer when gate drive capability is limited (e.g., microcontroller GPIO direct drive)

Compared with Si7852DP and DMN3020LSD, IRF7468PbF offers the best balance of low R_DS(on) at 4.5 V and moderate Q_g, making it optimal for 300–800 kHz telecom and server SMPS where both conduction and switching losses must be minimized.

Availability

IRF7468PbF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRF7468PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7468PbF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in telecom infrastructure and computing applications.

FAQ

What is the maximum continuous drain current for IRF7468PbF at 70°C ambient?

The maximum continuous drain current is 7.5 A at T_A = 70 °C with V_GS = 10 V, derated from 9.4 A at 25 °C. This value assumes SO-8 mounting on a standard FR-4 PCB with 1 inch² copper pour; actual current depends on board layout and airflow.

Does IRF7468PbF support 3.3 V logic-level gate drive?

No - IRF7468PbF has a gate threshold voltage range of 0.8–2.0 V, but its R_DS(on) is not specified below V_GS = 4.5 V. At 3.3 V, R_DS(on) rises significantly (>35 mΩ), increasing conduction loss; it is rated for reliable operation at ≥4.5 V gate drive.

Is the body diode in IRF7468PbF suitable for asynchronous rectification?

Yes - the integrated body diode is fully characterized with t_rr = 45–87 ns and Q_rr = 76–160 nC across temperature. However, for high-efficiency designs, synchronous rectification is strongly preferred due to its lower forward voltage drop versus the diode's typical V_SD = 0.81 V at 8 A.

What is the recommended gate resistor value for IRF7468PbF in a 500 kHz buck converter?

A 10–22 Ω non-inductive gate resistor is recommended to dampen ringing while maintaining fast switching. With Q_g = 23 nC and typical driver rise time <20 ns, 15 Ω provides optimal trade-off between EMI suppression and switching speed in 500 kHz operation.

IRF7468 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.5mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2460 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7468 FAQ

1.How can I place an order for IRF7468 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7468 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7468 reliable?

The price and inventory of IRF7468 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7468 is usually 5 days.

3.What payment methods are accepted for IRF7468?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7468 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7468?

IRF7468 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7468 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7468?

For technical support, including IRF7468 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7468 requirements.

6.How does Aetrix verify that IRF7468 is sourced from the original manufacturer or authorized distributors?

All IRF7468 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7468 meets industry standards.

7.What is the process for return or replacement of IRF7468?

All IRF7468 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7468, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7468 part is unused and in its original packaging.

Return procedure for IRF7468:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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