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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7468PBF

Name: IRF7468PBF
Brand: Infineon Technologies
SKU: IRF7468PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7468PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7468PBF.pdf

Description:: MOSFET N-CH 40V 9.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7468PBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 9.4 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and industrial power supplies. It features 15.5 mΩ R_DS(on) at V_GS = 10 V, 17.0 mΩ at 4.5 V, and ultra-low gate charge (Q_g = 23–34 nC), enabling efficient switching above 500 kHz.

For engineers reviewing the IRF7468PBF datasheet, IRF7468PBF pinout, IRF7468PBF application, or IRF7468PBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, fully characterized avalanche capability (E_AS = 160 mJ), body diode reverse recovery performance (Q_rr = 76–110 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar HEXFET® technology with optimized cell pitch and trench-assisted channel design to achieve low on-resistance while maintaining robust safe operating area (SOA) and unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 0.8–2.0 V) ensures reliable turn-on with standard logic-level drivers.

The device integrates a fast, low-Q_rr body diode with trr = 45–87 ns and V_SD = 0.81–1.3 V, supporting high-efficiency synchronous rectification without external Schottky diodes. Dynamic parameters-including C_iss = 2460 pF, C_oss = 490 pF, and Crss = 38 pF-are fully characterized at V_DS = 20 V and f = 1 MHz for accurate hard-switching loss modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports input rails up to 32 V DC with 20 % margin for transient spikes in telecom 48 V systems.
R_DS(on) @ V_GS = 10 V	15.5 mΩ max - Enables ≤ 1.4 W conduction loss at 9.4 A continuous drain current in 25 °C ambient.
R_DS(on) @ V_GS = 4.5 V	17.0 mΩ max - Ensures full enhancement with 5 V microcontroller GPIO or PWM controller outputs.
Q_g	23–34 nC - Reduces gate drive power and enables < 20 ns turn-on delay (t_d(on) = 7.6 ns) at RG = 1.8 Ω.
E_AS	160 mJ - Withstands single-pulse avalanche stress during hard-switching fault conditions without failure.
Q_rr	76–160 nC - Low reverse recovery charge minimizes shoot-through risk and switching loss in synchronous buck topologies.
R_θJA	50 °C/W - Limits junction temperature rise to ≤ 125 °C at 2.5 W dissipation on standard FR-4 PCB with 1-in² copper pour.

Pinout & Package

IRF7468PBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected internal drain terminals - collectively handle full 9.4 A continuous current and provide low-inductance path to ground plane.
5	Gate (G)	Control terminal - accepts 0–12 V logic-level signals; requires < 34 nC charge for full enhancement.
Source (S)	Source (S)	Reference node for gate drive and current sensing - pins 5 and 6 are internally connected to source metallization.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	17.0 mΩ max - Eliminates need for level-shifting gate drivers in 5 V control architectures.
Fully characterized avalanche rating	E_AS = 160 mJ, I_AR = 8.0 A - Allows operation in unclamped inductive switching without derating or external snubbers.
Low Q_rr body diode	Q_rr = 76–160 nC - Reduces cross-conduction losses and EMI in synchronous rectifiers operating > 300 kHz.
Lead-free and RoHS-compliant	Pb-free plating with matte tin finish - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life.

Applications

Telecom DC-DC Converters

Industrial Buck Regulators

Use Scenario: 48 V input to 3.3/5/12 V isolated DC-DC modules in base station power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes in secondary-side LLC or phase-shifted full-bridge converters.

Use Value: Achieves > 95 % efficiency at 500 kHz switching by reducing conduction loss vs. 40 V Schottky (typ. 0.45 V VF) and minimizing Q_rr-induced switching loss.

Use Scenario: Point-of-load (POL) buck converters powering FPGAs and ASICs in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side or low-side switch in 300–1000 kHz buck stages with 5 V gate drive from integrated controller.

Use Value: Delivers 9.4 A continuous output with < 1.5 W total loss (conduction + switching) due to 15.5 mΩ R_DS(on) and 34 nC Q_g.

Server VRMs

Industrial Motor Drive Gate Drivers

Use Scenario: Multiphase CPU/GPU voltage regulator modules requiring tight transient response and low thermal impedance.

IC Role / Device Role / Timing Role: Low-side MOSFET in interleaved buck phases, driven by dedicated gate driver ICs with 4.5 V logic compatibility.

Use Value: Maintains stable R_DS(on) across -55 to +150 °C (normalized to 1.8× at 125 °C), ensuring consistent phase current sharing under thermal stress.

Use Scenario: Half-bridge gate driver output stage driving IGBTs or SiC MOSFETs in servo amplifier power stages.

IC Role / Device Role / Timing Role: Level-shifting buffer and current-boosting switch between digital isolator and high-power gate node.

Use Value: Withstands repetitive UIS events (IAS = 8.0 A) during IGBT short-circuit protection cycles without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 10 V; Q_g = 29 nC; SO-8; V_DS = 40 V	Lower R_DS(on) but higher C_iss (2900 pF) increases gate drive loss at > 1 MHz	Prefer when conduction loss dominates and gate drive strength permits higher Q_g.
DMN3026LSD-13	R_DS(on) = 18.5 mΩ @ 4.5 V; Q_g = 17 nC; SO-8; V_DS = 30 V	Lower voltage rating limits use to ≤ 24 V systems; lower Q_g improves high-frequency efficiency	Prefer for cost-sensitive 24 V industrial buck converters where 30 V margin suffices.

Compared with Si7852DP-T1-GE3 and DMN3026LSD-13, IRF7468PBF offers balanced trade-offs: superior 4.5 V R_DS(on) vs. DMN3026LSD-13 and lower C_iss vs. Si7852DP-T1-GE3-making it optimal for 48 V telecom converters demanding both logic-level drive and < 1 MHz switching.

Availability

IRF7468PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial buck regulators, and server VRMs requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IRF7468PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with over 30 years of MOSFET innovation.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in telecom infrastructure, industrial automation, and computing power supplies.

FAQ

What is the maximum continuous drain current for IRF7468PBF at 70°C ambient?

The maximum continuous drain current is 7.5 A at T_A = 70°C with V_GS = 10 V, based on thermal limits of the SO-8 package and 1.6 W maximum power dissipation. This value assumes no additional heatsinking and standard 1-in² copper pour on FR-4 PCB.

Does IRF7468PBF have avalanche capability, and how is it rated?

Yes, IRF7468PBF is fully characterized for unclamped inductive switching with E_AS = 160 mJ (single-pulse) and I_AR = 8.0 A. Testing follows JEDEC JESD24-11 using L = 5.0 mH, RG = 25 Ω, and starting T_J = 25°C, confirming ruggedness in hard-switching fault conditions.

Can IRF7468PBF be driven directly by a 3.3 V microcontroller GPIO?

No-its gate threshold voltage range is 0.8–2.0 V, but full enhancement requires ≥ 4.5 V to achieve specified R_DS(on). At 3.3 V, R_DS(on) rises significantly (> 35 mΩ), increasing conduction loss. A 5 V gate driver or level shifter is required for optimal performance.

What is the body diode forward voltage and reverse recovery behavior?

V_SD is 0.81 V at T_J = 25°C and 8.0 A, rising to 0.65 V at 125°C. Reverse recovery time (t_rr) is 45–87 ns and Q_rr is 76–160 nC depending on temperature and di/dt, enabling clean commutation in synchronous rectifier applications without external diode supplementation.

IRF7468PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.5mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2460 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7468PBF FAQ

1.How can I place an order for IRF7468PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7468PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7468PBF reliable?

The price and inventory of IRF7468PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7468PBF is usually 5 days.

3.What payment methods are accepted for IRF7468PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7468PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7468PBF?

IRF7468PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7468PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7468PBF?

For technical support, including IRF7468PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7468PBF requirements.

6.How does Aetrix verify that IRF7468PBF is sourced from the original manufacturer or authorized distributors?

All IRF7468PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7468PBF meets industry standards.

7.What is the process for return or replacement of IRF7468PBF?

All IRF7468PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7468PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7468PBF part is unused and in its original packaging.

Return procedure for IRF7468PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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