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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7468TR

Name: IRF7468TR
Brand: Infineon Technologies
SKU: IRF7468TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7468TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7468TR.pdf

Description:: MOSFET N-CH 40V 9.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7468TR from Infineon Technologies (formerly International Rectifier) is a 40 V, 9.4 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It delivers R_DS(on) = 15.5 mΩ @ V_GS = 10 V and 17.0 mΩ @ V_GS = 4.5 V, with ultra-low gate charge (Q_g = 23 nC typ.) and fast switching (t_r = 2.3 ns, t_f = 3.8 ns).

For engineers reviewing the IRF7468TR datasheet, IRF7468TR pinout, IRF7468TR application, or IRF7468TR equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, fully characterized avalanche capability (E_AS = 160 mJ), body diode reverse recovery performance (Q_rr = 76–110 nC), and SO-8 thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar HEXFET technology with optimized channel geometry to achieve low on-resistance while maintaining robust switching behavior. Its gate threshold voltage (V_GS(th) = 0.8–2.0 V) ensures reliable turn-on with standard logic-level drivers, and its Crss = 38 pF supports stable operation in high-dV/dt environments.

The device integrates a co-packaged body diode with characterized reverse recovery (trr = 45–87 ns, Qrr = 76–160 nC) and low forward voltage (V_SD = 0.81 V @ 8.0 A, T_J = 25°C), enabling efficient synchronous rectification without external Schottky diodes in telecom and industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for primary-side switch or secondary-side synchronous rectifier in ≤48 V input systems
R_DS(on) @ V_GS = 10 V	15.5 mΩ max - Enables <1.5 W conduction loss at 9.4 A continuous drain current in thermally constrained layouts
R_DS(on) @ V_GS = 4.5 V	17.0 mΩ max - Supports direct drive from 5 V microcontrollers or PWM controllers without level-shifting
Q_g	23 nC typ. - Reduces gate driver power loss and enables >1 MHz switching in high-efficiency SMPS designs
E_AS	160 mJ - Withstands unclamped inductive energy during hard-switching transients without failure
trr / Qrr	45–87 ns / 76–160 nC - Limits diode recovery loss and EMI in synchronous rectifier topologies
R_θJA	50 °C/W - Requires minimal copper area (1 in²) for thermal management in board-mounted applications

Pinout & Package

IRF7468TR is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction and current handling. The package supports reflow soldering and is lead-free (PbF) compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected high-current output node; electrically tied to thermal pad for junction-to-board heat transfer
5	Gate (G)	Control terminal requiring <23 nC charge for full enhancement; sensitive to ESD (±12 V rating)
Source (S)	Source (S)	Reference node for gate drive and current sensing; pins 5 and 8 are source terminals in dual-source configuration

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	17.0 mΩ max - Eliminates need for gate boosters in 5 V control architectures
Low gate-to-drain charge (Q_gd)	6.7 nC typ. - Minimizes Miller effect and improves dv/dt immunity in hard-switched converters
Fully characterized avalanche rating	E_AS = 160 mJ, I_AR = 8.0 A - Allows safe operation under inductive turn-off stress without snubbers
Optimized body diode	Q_rr = 76 nC @ 25°C - Reduces switching loss and ringing in synchronous rectifier mode

Applications

Telecom DC-DC Converters

Industrial Buck Regulators

Use Scenario: 48 V input to 3.3/5/12 V isolated output in base station power modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes in forward or LLC topologies.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving efficiency from 92% to 94.5% at full load.

Use Scenario: CPU core voltage regulation in programmable logic controllers (PLCs) and motor drives.

IC Role / Device Role / Timing Role: High-side or low-side switch in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: Low Q_g and fast t_r/t_f enable stable 1 MHz operation with <5% duty-cycle jitter.

Server VRMs

Medical Power Supplies

Use Scenario: 12 V input to 0.8–1.8 V output for FPGA/GPU power delivery in rack-mounted servers.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck stages with integrated current sensing.

Use Value: R_DS(on) stability over temperature (±15% from –40°C to +125°C) ensures consistent current sharing across phases.

Use Scenario: Isolated auxiliary supply (24 V → 5 V/3.3 V) in diagnostic imaging equipment.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converters meeting IEC 60601 creepage/clearance requirements.

Use Value: Avalanche ruggedness (160 mJ) prevents failure during line surge events common in hospital-grade AC mains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 10 V; Q_g = 27 nC; SO-8 with enhanced thermal pad	Higher conduction efficiency but slower switching due to higher Q_g	Prefer for <500 kHz applications where lowest R_DS(on) dominates system loss budget
DMN3022LSD-13	R_DS(on) = 19.5 mΩ @ 4.5 V; Q_g = 15 nC; dual-N in SO-8	Lower gate charge enables faster switching but higher conduction loss at 7.5 A	Prefer for space-constrained dual-switch designs where gate drive simplicity outweighs R_DS(on) penalty

Compared with Si7852DP and DMN3022LSD, IRF7468TR offers the best balance of low 4.5 V R_DS(on), moderate Q_g, and proven avalanche ruggedness-making it optimal for telecom and industrial SMPS where reliability under transient stress is critical.

Availability

IRF7468TR is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial buck regulators, and medical power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7468TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7468TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in telecom infrastructure, server VRMs, and industrial automation systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7468TR supports ID = 7.5 A continuous drain current at TA = 70°C with VGS = 10 V, derated from 9.4 A at 25°C. This value assumes SO-8 mounting on a 1 in² copper area and accounts for thermal resistance RθJA = 50 °C/W. Actual current capability depends on PCB layout, airflow, and heatsinking.

Does IRF7468TR have a specified avalanche energy rating?

Yes, the IRF7468TR is fully characterized for unclamped inductive switching with EAS = 160 mJ (single-pulse) and IAR = 8.0 A. These values are measured per JEDEC JESD24-1 using the test circuit in Figure 14a, with L = 5.0 mH, RG = 25 Ω, and starting TJ = 25°C.

Can IRF7468TR be driven directly by a 3.3 V microcontroller GPIO?

No - while VGS(th) starts at 0.8 V, the device requires ≥4.5 V gate drive to achieve RDS(on) ≤17.0 mΩ. At 3.3 V, RDS(on) exceeds 35 mΩ (per Fig. 13), increasing conduction loss significantly. A dedicated gate driver or level shifter is required for reliable operation.

What is the body diode forward voltage at 8.0 A and 125°C?

The body diode forward voltage is VSD = 0.65 V typical at TJ = 125°C, IS = 8.0 A, and VGS = 0 V. This value is confirmed in the Diode Characteristics table on page 2 of the official datasheet and reflects reduced forward drop at elevated temperature due to positive tempco of silicon PN junctions.

IRF7468TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15.5mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2460 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7468TR FAQ

1.How can I place an order for IRF7468TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7468TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7468TR reliable?

The price and inventory of IRF7468TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7468TR is usually 5 days.

3.What payment methods are accepted for IRF7468TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7468TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7468TR?

IRF7468TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7468TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7468TR?

For technical support, including IRF7468TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7468TR requirements.

6.How does Aetrix verify that IRF7468TR is sourced from the original manufacturer or authorized distributors?

All IRF7468TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7468TR meets industry standards.

7.What is the process for return or replacement of IRF7468TR?

All IRF7468TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7468TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7468TR part is unused and in its original packaging.

Return procedure for IRF7468TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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