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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7469

Name: IRF7469
Brand: Infineon Technologies
SKU: IRF7469
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7469

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7469.pdf

Description:: MOSFET N-CH 40V 9A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,539

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Product details

Overview

IRF7469 from Infineon Technologies (formerly International Rectifier) is a 40 V, 9.0 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It features 17 mΩ R_DS(on) at V_GS = 10 V, 15 nC total gate charge, and fully characterized avalanche capability (E_AS = 210 mJ).

For engineers reviewing the IRF7469 datasheet, IRF7469 pinout, IRF7469 application, or IRF7469 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge profile for ZVS/ZCS switching, body diode reverse recovery (Q_rr = 91–230 nC), and SO-8 thermal performance under forced-air or PCB copper-limited conditions.

Technical Context

The IRF7469 employs trench-gate HEXFET® technology to achieve ultra-low gate impedance and fast switching transitions (t_r = 2.2 ns, t_f = 3.5 ns). Its low C_iss (2000 pF) and Cr_ss (28 pF) support high-frequency operation up to 1 MHz in telecom power supplies.

It integrates a robust body diode with V_SD = 0.80 V at I_S = 7.2 A and T_J = 25°C, and specified trr (47–120 ns) and Q_rr (91–230 nC) across temperature, enabling reliable synchronous rectification without external Schottky replacement in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 3.3 V/5 V/12 V output rails in telecom and industrial SMPS
R_DS(on)	17 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 9 A continuous current
Q_g	15 nC typ - Supports efficient gate drive with low-power controllers (e.g., UCC27531, IR1167)
E_AS	210 mJ - Rated single-pulse avalanche energy allows safe unclamped inductive switching in flyback or LLC resonant circuits
T_J Range	–55°C to +150°C - Qualified for industrial ambient environments with full parameter guarantee
C_oss	480 pF - Low output capacitance reduces turn-off losses and improves light-load efficiency
I_D (T_A = 70°C)	7.3 A - Derated current rating reflects real-world board-level thermal limits in SO-8 footprint

Pinout & Package

IRF7469 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction. The package supports ≤50°C/W junction-to-ambient thermal resistance when mounted on 1-inch² copper board.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8 (D)	Drain	Parallel-connected internal drain terminals; must be tied to high-current output node and thermal plane
5 (G)	Gate	Control input requiring low-inductance routing to minimize ringing and overshoot during switching
2–3 (S)	Source	Common return path for load current and gate drive reference; connects to power ground plane

Key Features

Feature	Design Value
Ultra-low R_DS(on)	17 mΩ at 10 V gate drive enables >95% efficiency in 12 V → 3.3 V buck converters at 7 A
Low gate charge	15 nC total charge reduces driver power consumption and simplifies gate resistor selection
Fully characterized avalanche	210 mJ E_AS and 7.2 A I_AR allow robust operation in hard-switched topologies without snubbers
Optimized body diode	Q_rr = 91 nC (25°C) and trr = 47 ns enable synchronous rectification in forward/flyback converters

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V input to 12 V/5 V/3.3 V isolated DC-DC modules in 1RU telecom equipment.

IC Role / Device Role: Synchronous rectifier in secondary-side of forward or active-clamp forward converter.

Use Value: Replaces Schottky diodes to reduce conduction loss by >40%, improving full-load efficiency from 92% to 94.5%.

Use Scenario: Multiphase buck converter delivering CPU core voltage (0.8–1.2 V) at up to 200 A.

IC Role / Device Role: High-side or low-side switch in 30–50 kHz multiphase VRM stage.

Use Value: Low R_DS(on) and fast switching minimize both conduction and switching losses in high-current, low-voltage rails.

Industrial PLC Power Supplies

LED Driver Secondary Side

Use Scenario: 24 V or 48 V input offline SMPS powering programmable logic controller I/O modules.

IC Role / Device Role: Primary-side switch in 100–300 kHz flyback or half-bridge topology.

Use Value: Avalanche rating ensures reliability during line surges and transformer leakage energy dissipation.

Use Scenario: Constant-current LED driver with isolated secondary-side regulation using optocoupler feedback.

IC Role / Device Role: Synchronous rectifier in secondary-side of quasi-resonant flyback.

Use Value: Body diode Q_rr and V_SD are tightly specified to prevent cross-conduction and improve dimming linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP	R_DS(on) = 15.5 mΩ @ 10 V; Q_g = 17.5 nC; SO-8 with enhanced thermal pad	Higher peak current rating (10.5 A); better thermal resistance (R_θJA = 42°C/W)	Preferred for higher-power density designs where board space is constrained and thermal margin is critical
IPB80N04S4-03	R_DS(on) = 3.0 mΩ @ 10 V; TO-263 package; 80 A ID	Lower R_DS(on) but larger footprint and higher gate charge (54 nC); requires heavier gate driver	Only suitable when conduction loss dominates and layout allows TO-263 mounting with adequate heatsinking

Compared with SiR872DP and IPB80N04S4-03, the IRF7469 offers balanced trade-offs between gate drive simplicity, thermal performance in SO-8, and cost-making it optimal for mid-power telecom and industrial SMPS where board area and driver complexity are design constraints.

Availability

IRF7469 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PLC power supplies requiring stable component supply and long-term industrial qualification.

Supply support for IRF7469 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7469 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power conversion in industrial and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF7469 does not specify I_D at 100°C case temperature directly. Based on its linear derating factor (0.02 mW/°C) and P_D = 2.5 W at 25°C, maximum power dissipation at T_C = 100°C is 1.0 W. Using R_DS(on) = 17 mΩ, this supports ~9.6 A RMS current before exceeding thermal limits-however, SO-8 package limitations require derating to ~5.5 A continuous in typical 2-layer PCB layouts.

Is IRF7469 suitable for use in zero-voltage switching (ZVS) circuits?

Yes. With C_oss = 480 pF and Cr_ss = 28 pF, the IRF7469 exhibits low capacitive nonlinearity and predictable turn-on timing, making it well-suited for ZVS operation in LLC resonant converters. Its low Q_g/Q_gd ratio (15 nC / 5 nC) further supports clean gate control during soft-switching transitions.

Does the body diode support bidirectional current in synchronous rectification?

No-the body diode is unidirectional (source-to-drain only) and cannot conduct reverse current. In synchronous rectification, the MOSFET channel is actively turned on during the diode conduction interval to replace the body diode path. The device's specified Q_rr and trr characterize the body diode's behavior during commutation, not bidirectional capability.

Can IRF7469 be paralleled with identical units for higher current handling?

Yes, but with strict layout requirements: matched gate drive paths (≤1 Ω series resistance difference), symmetrical source/drain routing, and shared thermal plane. The positive R_DS(on) temperature coefficient (0.04 V/°C) provides inherent current sharing above 70°C junction temperature, improving reliability in parallel configurations.

IRF7469 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7469 FAQ

1.How can I place an order for IRF7469 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7469 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7469 reliable?

The price and inventory of IRF7469 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7469 is usually 5 days.

3.What payment methods are accepted for IRF7469?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7469 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7469?

IRF7469 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7469 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7469?

For technical support, including IRF7469 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7469 requirements.

6.How does Aetrix verify that IRF7469 is sourced from the original manufacturer or authorized distributors?

All IRF7469 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7469 meets industry standards.

7.What is the process for return or replacement of IRF7469?

All IRF7469 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7469, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7469 part is unused and in its original packaging.

Return procedure for IRF7469:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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