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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7469PBF

Name: IRF7469PBF
Brand: Infineon Technologies
SKU: IRF7469PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7469PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7469PBF.pdf

Description:: MOSFET N-CH 40V 9A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:4,698

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Product details

Overview

IRF7469PBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 9.0 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It features 17 mΩ R_DS(on) at V_GS = 10 V, 15 nC total gate charge, and fully characterized avalanche capability (E_AS = 210 mJ).

For engineers reviewing the IRF7469PBF datasheet, IRF7469PBF pinout, IRF7469PBF application, or IRF7469PBF equivalent, key selection criteria include low conduction loss at 4.5 V drive, fast switching (t_r = 2.2 ns), body diode recovery performance (Q_rr = 91–140 nC), and thermal resistance (R_θJA = 50 °C/W) in compact SO-8.

Technical Context

This MOSFET employs trench-gate HEXFET technology to achieve ultra-low R_DS(on) and gate impedance while maintaining robust unclamped inductive switching capability. Its 17 mΩ on-resistance at 10 V gate drive and 21 mΩ at 4.5 V enables efficient operation in 5 V and 3.3 V gate-driven topologies.

The device integrates a co-packaged body diode with characterized reverse recovery (t_rr = 47–120 ns, Q_rr = 91–230 nC) and low forward voltage (V_SD = 0.80 V @ 7.2 A, T_J = 25°C), supporting high-efficiency synchronous rectification without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V input DC-DC stages
R_DS(on) max	17 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 7.2 A continuous current
I_D continuous	9.0 A @ T_A = 25°C - Supports mid-power telecom and industrial SMPS outputs
Q_g total	15–23 nC - Low gate drive power requirement for >1 MHz switching
E_AS	210 mJ - Withstands single-pulse avalanche stress in hard-switched topologies
t_r/t_f	2.2 ns / 3.5 ns - Minimizes switching transition losses in high-frequency converters
C_iss/C_oss	2000 pF / 480 pF - Predictable Miller effect and output capacitance for gate driver sizing

Pinout & Package

IRF7469PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal dissipation. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8	Drain (D)	Common high-current output node; electrically tied internally; used for heat sinking
5	Gate (G)	Control terminal requiring ≤20 V drive; low input capacitance (C_iss = 2000 pF)
7–8	Source (S)	Power return path; also serves as body diode cathode; referenced to control ground

Key Features

Feature	Design Value
Ultra-low R_DS(on)	17 mΩ @ 10 V ensures <0.9 W conduction loss at 7.2 A in 25°C ambient
Low gate charge	15 nC typical reduces gate driver power and enables faster turn-on/turn-off
Enhanced body diode	Q_rr = 91 nC @ 25°C supports clean zero-voltage switching in synchronous rectifiers
Avalanche-rated	210 mJ single-pulse energy rating allows reliable operation under inductive fault conditions
Lead-free & RoHS-compliant	Pb-free terminations meet IPC/JEDEC J-STD-020 reflow profile requirements

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V to 12 V isolated forward converter in telecom shelf power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode on secondary side.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving efficiency from 92% to 94.5% at full load.

Use Scenario: Multiphase buck converter delivering 12 V to CPU core logic.

IC Role / Device Role / Timing Role: High-side or low-side power switch in 500 kHz–1 MHz switching stage.

Use Value: 17 mΩ R_DS(on) and 2.2 ns rise time minimize both conduction and switching losses at 7–9 A per phase.

Industrial PLC Power Modules

LED Driver Secondary Side

Use Scenario: 24 V input non-isolated buck regulator powering I/O interface circuitry.

IC Role / Device Role / Timing Role: Main switching FET with integrated body diode conducting freewheeling current.

Use Value: Fully characterized t_rr = 47 ns and Q_rr = 91 nC prevent voltage overshoot during diode commutation.

Use Scenario: Secondary-side synchronous rectifier in constant-current LED driver with flyback topology.

IC Role / Device Role / Timing Role: Low-V_DS switch synchronizing with primary-side controller timing.

Use Value: 0.80 V V_SD at 7.2 A lowers forward drop vs. discrete diode, increasing lumen/W by ~3.2% at 100 W output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 15.5 mΩ @ 10 V; Q_g = 18 nC; SO-8 package	Slightly lower R_DS(on) but higher gate charge increases driver loss at >1 MHz	Preferred for 500 kHz–800 kHz VRMs where conduction loss dominates
DMN3020LSD-13	R_DS(on) = 20 mΩ @ 10 V; Q_g = 11 nC; dual-N SO-8	Lower gate charge improves high-frequency efficiency but higher R_DS(on) raises conduction loss	Better fit for space-constrained dual-switch designs with moderate current (<6 A)

Compared with Si7852DP and DMN3020LSD, IRF7469PBF offers optimal balance of R_DS(on), Q_g, and avalanche ruggedness for 7–9 A synchronous rectification-making it preferred in telecom and industrial SMPS where reliability under transient stress is critical.

Availability

IRF7469PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF7469PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7469PBF belongs to Infineon's HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies in telecom, computing, and industrial applications.

FAQ

What is the maximum safe operating temperature for IRF7469PBF?

The junction temperature must not exceed +150°C, and storage temperature range is –55°C to +150°C. Derating begins at T_A = 25°C with linear factor 0.02 mW/°C above that point. Thermal resistance R_θJA is 50°C/W on standard FR-4 PCB; use copper pour or thermal vias to maintain T_J < 125°C under 7.2 A continuous load.

Can IRF7469PBF be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, but R_DS(on) rises sharply below 4.5 V: 21 mΩ @ 4.5 V vs. 17 mΩ @ 10 V. A dedicated gate driver (e.g., TC4427) or level-shifting buffer is required to ensure full enhancement and minimize conduction loss.

Does IRF7469PBF have built-in ESD protection?

Yes-it meets HBM ESD rating of ±2000 V per JEDEC JS-001. However, no internal gate protection zener is present; external 12–15 V Zener clamping between gate and source is recommended when driving from high-impedance sources or in noisy environments.

How does the body diode performance compare to discrete Schottky diodes?

At 7.2 A and 25°C, V_SD = 0.80 V and Q_rr = 91 nC-comparable to medium-performance Schottky diodes (e.g., SS34: V_F ≈ 0.52 V, no Q_rr). While forward drop is higher, the integrated diode eliminates layout parasitics and enables precise synchronous timing, yielding net system efficiency gain in well-designed SMPS.

IRF7469PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7469PBF FAQ

1.How can I place an order for IRF7469PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7469PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7469PBF reliable?

The price and inventory of IRF7469PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7469PBF is usually 5 days.

3.What payment methods are accepted for IRF7469PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7469PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7469PBF?

IRF7469PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7469PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7469PBF?

For technical support, including IRF7469PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7469PBF requirements.

6.How does Aetrix verify that IRF7469PBF is sourced from the original manufacturer or authorized distributors?

All IRF7469PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7469PBF meets industry standards.

7.What is the process for return or replacement of IRF7469PBF?

All IRF7469PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7469PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7469PBF part is unused and in its original packaging.

Return procedure for IRF7469PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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