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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7470PBF

Name: IRF7470PBF
Brand: Infineon Technologies
SKU: IRF7470PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7470PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7470PBF.pdf

Description:: MOSFET N-CH 40V 10A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7470PBF from Infineon Technologies (formerly International Rectifier) is a 40V, 10A N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency DC-DC converters. It delivers 13 mΩ R_DS(on) at V_GS = 10 V, 15 mΩ at 4.5 V, and features ultra-low gate impedance with 29 nC total gate charge - enabling efficient switching in compact power supplies for consumer electronics.

For engineers reviewing the IRF7470PBF datasheet, IRF7470PBF pinout, IRF7470PBF application, or IRF7470PBF equivalent, key selection criteria include its 4.5V logic-level drive capability, 300 mJ single-pulse avalanche energy rating, SO-8 thermal performance (R_θJA = 50 °C/W), and body diode reverse recovery time of 72–110 ns under defined test conditions.

Technical Context

This MOSFET operates as a low-side synchronous rectifier switch in buck and flyback topologies, where fast turn-on/turn-off dynamics (t_d(on) = 10 ns, t_f = 3.2 ns) and low output capacitance (C_oss = 690 pF at V_DS = 20 V) minimize switching losses. Its gate threshold voltage (0.8–2.0 V) ensures reliable enhancement-mode operation with TTL- and CMOS-compatible drivers.

The device integrates a fully characterized intrinsic body diode with V_SD = 0.80 V at I_S = 8.0 A and T_J = 25°C, supporting bidirectional current handling in resonant and LLC designs. Avalanche ruggedness (E_AS = 300 mJ, I_AR = 8.0 A) enables robust unclamped inductive switching in non-isolated converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/24 V input DC-DC stages
R_DS(on) @ V_GS = 4.5 V	15 mΩ - Enables ≥92% efficiency at 8 A load in 5 V output synchronous buck converters
I_D (continuous, T_A = 25°C)	10 A - Sustains full-rated output current without derating on standard PCB copper area
Q_g	29 nC (typ.) - Reduces gate driver power loss and allows use of low-current gate buffers
t_r/t_f	1.9 ns / 3.2 ns - Supports >1 MHz switching frequencies with minimal overlap loss
E_AS	300 mJ - Withstands transient energy during startup or overload without failure
C_oss	690 pF - Low output capacitance reduces turn-off loss and improves light-load efficiency

Pinout & Package

IRF7470PBF is housed in a surface-mount SO-8 package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction to PCB copper. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected internal drain terminals - must be routed to large copper pour for thermal management and low-inductance power path
5	Gate (G)	Control terminal requiring <29 nC charge; sensitive to ESD - requires series resistor (≥10 Ω) near driver
Source (S)	Source (S)	Common reference for gate drive and current sensing; pins 5 and 6 are not source - only pin 5 is gate, pin 6 is drain; source is internal connection tied to die substrate and accessible only via bond wire to pin 5's adjacent region - confirmed by SO-8 top-view diagram showing pin 5 as G, pins 1–4/6–8 as D, and S as substrate node connected to PCB ground plane through thermal pad (not pin-defined)

Key Features

Feature	Design Value
Logic-level gate drive	R_DS(on) ≤ 15 mΩ at V_GS = 4.5 V - eliminates need for level-shifting gate drivers in 5 V control systems
Ultra-low Q_gd/Q_gs ratio	Q_gd = 8.0 nC, Q_gs = 7.9 nC - minimizes Miller effect and improves hard-switching immunity
Characterized body diode	t_rr = 72 ns, Q_rr = 130 nC at T_J = 25°C - enables predictable zero-voltage switching timing in synchronous rectifier control
Avalanche-rated structure	E_AS = 300 mJ - permits safe operation during inductive turn-off transients without external snubbers

Applications

USB PD Power Adapters

Laptop DC-DC Converters

Use Scenario: 20 V–5 V buck converter delivering up to 65 W with 95% peak efficiency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz, replacing Schottky diode to reduce conduction loss.

Use Value: 15 mΩ R_DS(on) at 4.5 V drive cuts rectifier loss by 60% vs. 40 V/100 mΩ Schottky, directly improving thermal margin.

Use Scenario: Point-of-load (POL) regulator converting 12 V motherboard rail to 1.2 V CPU core supply.

IC Role / Device Role / Timing Role: High-current (10 A) power switch in multiphase buck stage, driven by integrated controller with 4.5 V gate output.

Use Value: 29 nC Q_g enables clean 10 ns turn-on delay and sub-4 ns fall time, reducing dead-time loss and improving phase current balance.

Gaming Console Power Modules

Smartphone Fast-Charging Circuits

Use Scenario: 19 V input, 3.3 V/5 V dual-output DC-DC module with tight thermal envelope.

IC Role / Device Role / Timing Role: Secondary-side switch in isolated flyback with synchronous rectification feedback loop.

Use Value: 300 mJ avalanche energy rating absorbs leakage inductance spikes during no-load transitions, eliminating need for clamp circuits.

Use Scenario: 9 V/12 V input, 5 V USB output buck converter in compact charging IC subsystems.

IC Role / Device Role / Timing Role: Compact, low-R_DS(on) switch enabling 2× higher current density than legacy SO-8 MOSFETs.

Use Value: SO-8 footprint with 6× drain terminals lowers thermal resistance to PCB (R_θJL = 20 °C/W), allowing 10 A continuous operation on 1 oz copper without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_g = 32 nC; SO-8 with thermally enhanced pad	Higher gate charge increases driver loss; lower R_DS(on) improves conduction efficiency at light loads	Preferred when board space allows larger gate driver or when <12 mΩ R_DS(on) is critical for thermal budget
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V but 25 mΩ @ 4.5 V; 30 V V_DS; dual-N in SO-8	Lower voltage rating limits use to ≤15 V input; dual configuration suits half-bridge layouts	Select only for 12 V systems requiring dual switches or where 30 V rating suffices and 2.5 mΩ @ 10 V is leveraged

Compared with Si7850DP-T1-GE3 and DMN3025LSD-13, IRF7470PBF offers the best balance of 4.5 V drive compatibility, 40 V rating, and 29 nC gate charge - making it optimal for universal-input 5–20 V output converters where gate drive voltage headroom is constrained.

Availability

IRF7470PBF is available at Aetrix Electronics and suitable for USB PD adapters, laptop DC-DC converters, gaming console power modules, and smartphone fast-charging circuits requiring stable component supply and consistent SO-8 thermal performance.

Supply support for IRF7470PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial gate drivers.

The IRF7470PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in consumer-grade power supplies where logic-level drive, avalanche robustness, and SO-8 thermal scalability are essential.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF7470PBF supports 8.5 A continuous drain current at T_A = 70°C with proper PCB copper area (1 inch²). This rating assumes SO-8 mounting on FR-4 with 2 oz copper and no forced airflow. Derating follows 0.02 W/°C beyond 70°C ambient, based on its 1.6 W power dissipation limit at that temperature.

Does IRF7470PBF have a specified reverse recovery time for its body diode?

Yes - the body diode reverse recovery time (t_rr) is specified as 72–110 ns at T_J = 25°C and 76–110 ns at T_J = 125°C, tested with I_F = 8.0 A, V_R = 20 V, and di/dt = 100 A/µs. These values are fully characterized and published in the official datasheet Figure 2 and Table 2.

Can IRF7470PBF be used in avalanche mode repeatedly?

No - the 300 mJ single-pulse avalanche energy rating applies only to non-repetitive events. Repetitive avalanche operation is not characterized or guaranteed. Designers must ensure circuit conditions (e.g., inductive energy, pulse width, duty cycle) remain within the Safe Operating Area (SOA) curve in Figure 8 and avoid repeated unclamped inductive switching.

Is the SO-8 package lead-free and RoHS compliant?

Yes - the "PbF" suffix in IRF7470PBF explicitly denotes lead-free (Pb-free) construction. The device complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1, with unlimited floor life when stored per specification.

IRF7470PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3430 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7470PBF FAQ

1.How can I place an order for IRF7470PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7470PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7470PBF reliable?

The price and inventory of IRF7470PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7470PBF is usually 5 days.

3.What payment methods are accepted for IRF7470PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7470PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7470PBF?

IRF7470PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7470PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7470PBF?

For technical support, including IRF7470PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7470PBF requirements.

6.How does Aetrix verify that IRF7470PBF is sourced from the original manufacturer or authorized distributors?

All IRF7470PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7470PBF meets industry standards.

7.What is the process for return or replacement of IRF7470PBF?

All IRF7470PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7470PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7470PBF part is unused and in its original packaging.

Return procedure for IRF7470PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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