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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7471PBF

Name: IRF7471PBF
Brand: Infineon Technologies
SKU: IRF7471PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7471PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7471PBF.pdf

Description:: MOSFET N-CH 40V 10A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,335

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Product details

Overview

IRF7471PBF from Infineon Technologies (formerly International Rectifier) is a 40V, 10A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It features 13 mΩ max R_DS(on) at V_GS = 10 V, ultra-low gate impedance, fully characterized avalanche capability (300 mJ), and lead-free construction.

For engineers reviewing the IRF7471PBF datasheet, IRF7471PBF pinout, IRF7471PBF application, or IRF7471PBF equivalent, key selection criteria include its low conduction loss at 4.5 V gate drive (16 mΩ max), fast switching (t_r = 2.7 ns, t_f = 4.1 ns), and robust thermal performance (R_θJA = 50 °C/W on standard PCB).

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell layout to minimize gate charge (Q_g = 21–32 nC) and reverse transfer capacitance (C_rss = 46 pF), enabling efficient operation in hard-switched topologies above 500 kHz. Its body diode exhibits low forward voltage (V_SD = 0.80 V at I_S = 8.0 A, T_J = 25°C) and controlled reverse recovery (Q_rr = 130–200 nC).

The device is rated for continuous drain current up to 10 A at T_A = 25°C and 8.3 A at T_A = 70°C, with maximum power dissipation of 2.5 W (T_A = 25°C). Junction temperature range spans −55°C to +150°C, supporting industrial and telecom power supply environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage in primary-side switching or secondary-side synchronous rectification
R_DS(on) max @ V_GS = 10 V	13 mΩ - Enables <130 mW conduction loss at 10 A, critical for high-efficiency 12 V/48 V input converters
I_D continuous @ T_A = 25°C	10 A - Supports ≥120 W output in compact SO-8 footprint without forced air
Q_g total	21–32 nC - Determines gate driver strength requirement; enables <100 ns turn-on with 1.8 Ω resistor
E_AS	300 mJ - Specifies single-pulse unclamped inductive switching robustness for flyback or LLC resonant designs
R_θJA	50 °C/W - Thermal resistance on standard FR-4 PCB; sets junction rise to ~125°C at full 2.5 W dissipation
t_r/t_f	2.7 ns / 4.1 ns - Fast edge rates reduce switching losses in MHz-range synchronous buck stages

Pinout & Package

IRF7471PBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pad for enhanced thermal conduction. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤3.0 V threshold voltage and 21–32 nC total charge for full enhancement
2, 3, 4, 6, 7, 8	Drain	High-current power input/output node; all six pins electrically tied to internal die drain metallization
5	Source	Power return path and reference for gate drive; connects to PCB ground plane for low-inductance layout

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V drive	16 mΩ max - Enables direct compatibility with 5 V logic-level controllers in point-of-load regulators
Fully characterized avalanche energy	300 mJ single-pulse - Eliminates need for external snubbers in inductive switching circuits
Low Q_gd/Q_gs ratio	8.2–12 nC / 7.2–11 nC - Reduces Miller effect, improving noise immunity during dV/dt transitions
Optimized body diode recovery	Q_rr = 130–200 nC - Minimizes shoot-through risk and reverse recovery loss in synchronous rectifiers

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V input to 12 V/5 V isolated DC-DC modules in 19-inch rack systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes to improve efficiency by 2–3% at full load.

Use Value: 13 mΩ R_DS(on) reduces conduction loss below 1.3 W at 10 A, lowering heatsink requirements and system temperature rise.

Use Scenario: Multiphase buck converters delivering >100 A to CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: High-side or low-side switch in 300–600 kHz switching stages with 4.5 V gate drive.

Use Value: Fast 2.7 ns rise time and low C_iss (2820 pF) enable precise phase alignment and reduced gate drive power consumption.

Industrial SMPS

Automotive ADAS Power Supplies

Use Scenario: 24 V input offline power supplies for PLCs and motor drives operating across −40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or forward converters requiring rugged unclamped inductive switching.

Use Value: 300 mJ E_AS rating ensures reliable operation under output short-circuit or transformer saturation events.

Use Scenario: Compact 12 V to 3.3 V/1.8 V step-down supplies for radar processors and camera modules.

IC Role / Device Role / Timing Role: Low-voltage synchronous rectifier in high-density, thermally constrained automotive PCBs.

Use Value: SO-8 package with exposed drain pad achieves 20 °C/W junction-to-lead thermal resistance, enabling >8 A continuous current at 105°C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7474PBF	R_DS(on) = 11 mΩ @ 10 V (lower), Q_g = 25–37 nC (higher), same SO-8 package	Better conduction loss but slower switching; preferred where efficiency > speed in <300 kHz designs	Select when minimizing I²R loss dominates over gate drive loss and layout parasitics
Si7157DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 10 V, Q_g = 19–27 nC, lower C_oss (520 pF vs. 700 pF)	Improved hard-switching efficiency due to lower output capacitance and gate charge	Choose for MHz-range GaN-compatible half-bridges where reduced capacitive loss is critical

Compared with IRF7471PBF, IRF7474PBF trades higher gate charge for lower on-resistance-favoring low-frequency, high-current use; Si7157DP offers lower C_oss and Q_g, better suited for high-frequency, low-voltage synchronous rectification where capacitive discharge loss dominates.

Availability

IRF7471PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply and long-term production continuity.

Supply support for IRF7471PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with strong legacy in discrete power devices.

The IRF7471PBF belongs to Infineon's HEXFET® MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in telecom, computing, and industrial infrastructure.

FAQ

Is IRF7471PBF suitable for 5 V gate drive applications?

Yes. The device specifies R_DS(on) = 12–16 mΩ max at V_GS = 4.5 V and I_D = 8.0 A, confirming full enhancement with standard 5 V logic-level drivers. Its gate threshold voltage (1.0–3.0 V) ensures reliable turn-on even with marginal gate drive margins.

What is the maximum safe operating area (SOA) limitation at 100 V drain voltage?

At V_DS = 100 V, the SOA curve limits continuous DC current to ≤0.1 A due to R_DS(on)-dominated power dissipation. For pulsed operation, peak current is constrained by thermal response: at 100 µs pulse width and 2% duty cycle, maximum I_D is ~2.5 A per Fig. 8.

Does IRF7471PBF have an integrated ESD protection diode on the gate?

No. The datasheet does not specify gate ESD protection. Gate-to-source leakage is rated at ±200 nA at ±16 V, indicating no built-in Zener clamping. External gate protection (e.g., 12 V TVS) is recommended in high-noise environments or manual handling scenarios.

Can IRF7471PBF be used in parallel configurations?

Yes, but with design precautions. Its positive R_DS(on) temperature coefficient (0.043 V/°C) supports current sharing. However, layout symmetry, individual gate resistors (≥1 Ω), and matched trace inductance are mandatory to prevent oscillation or current imbalance above 5 A per device.

IRF7471PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2820 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7471PBF FAQ

1.How can I place an order for IRF7471PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7471PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7471PBF reliable?

The price and inventory of IRF7471PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7471PBF is usually 5 days.

3.What payment methods are accepted for IRF7471PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7471PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7471PBF?

IRF7471PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7471PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7471PBF?

For technical support, including IRF7471PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7471PBF requirements.

6.How does Aetrix verify that IRF7471PBF is sourced from the original manufacturer or authorized distributors?

All IRF7471PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7471PBF meets industry standards.

7.What is the process for return or replacement of IRF7471PBF?

All IRF7471PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7471PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7471PBF part is unused and in its original packaging.

Return procedure for IRF7471PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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