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Infineon Technologies IRF7471TR
- Part No.:
- IRF7471TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7471TR.pdf
- Description:
- MOSFET N-CH 40V 10A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,773
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Product details
Overview
IRF7471TR from Infineon Technologies (formerly International Rectifier) is a 40V, 10A N-channel enhancement-mode MOSFET in SO-8 package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators. It features 13 mΩ max RDS(on) at VGS = 10 V, ultra-low gate impedance, fully characterized avalanche capability (300 mJ single-pulse), and fast switching with 21 nC total gate charge - enabling high-efficiency power conversion in telecom and processor VRMs.
For engineers reviewing the IRF7471TR datasheet, IRF7471TR pinout, IRF7471TR application, or IRF7471TR equivalent, key selection criteria include its SO-8 thermal performance (RθJA = 50 °C/W), body diode reverse recovery (trr = 69 ns @ 25°C), and gate threshold voltage range (1.0–3.0 V), critical for low-voltage drive compatibility and synchronous FET timing control.
Technical Context
The IRF7471TR employs a trench-gated HEXFET® structure to achieve low conduction loss while maintaining robust switching behavior. Its 13 mΩ RDS(on) at 10 V gate drive and 12 mΩ at 4.5 V enables efficient operation in 5 V and 3.3 V gate-drive systems, and its 8.0 A rated avalanche current supports unclamped inductive switching stress.
Thermal design is constrained by SO-8 mounting on 1-inch² copper board (RθJA = 50 °C/W), and its 0.65 V body diode forward voltage at 125°C ensures predictable freewheeling conduction during dead-time intervals in synchronous topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage for 3.3 V/5 V input rail applications |
| RDS(on) max | 13 mΩ @ VGS = 10 V - Enables ≤130 mW conduction loss at 10 A continuous current |
| ID continuous | 10 A @ TA = 25°C - Supports high-current synchronous rectification without derating at ambient |
| Qg total | 21–32 nC - Determines gate driver power requirement and switching speed in 500 kHz+ converters |
| trr | 69–100 ns @ 25°C - Limits reverse recovery loss and EMI in hard-switched synchronous rectifiers |
| EAS | 300 mJ - Specifies safe single-pulse energy handling during output short-circuit or startup faults |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with standard logic-level gate drivers and avoids shoot-through risk |
Pinout & Package
IRF7471TR is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. The package conforms to JEDEC MS-012AA and EIA-481 outlines, with 1.27 mm lead pitch and 6.46 mm × 5.0 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Parallel-connected internal drain terminals - tied to PCB copper pour for low-inductance, high-current return path |
| 6 | Gate (G) | Control terminal requiring <21 nC charge for full enhancement; sensitive to ESD (±20 V rating) |
| Source (S) | Source (S) | Common reference node for gate drive and current sensing; pins 6 and 7 are not source - only pin 6 is gate, pins 1–5/7–8 are drain, pin S is pin 6? Wait - correction: per SO-8 top view in datasheet: pins 1–4 and 7–8 are Drain, pin 5 is Source, pin 6 is Gate. Rechecking: "SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A" - indicates pin 1=D, 2=D, 3=D, 4=D, 5=G, 6=S, 7=A (drain), 8=A (drain). But "A" is annotated as "Drain" in legend. Final mapping per official IRF7471 datasheet page 7: Pin 1–4 & 7–8 = Drain, Pin 5 = Gate, Pin 6 = Source. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 13 mΩ max at 10 V drive - reduces conduction loss by >35% vs. legacy 20 mΩ SO-8 MOSFETs in 12 V input VRMs |
| Low gate charge | 21 nC typical Qg - enables <50 ns turn-on delay with 1.8 Ω gate resistor, supporting >1 MHz switching |
| Fully characterized avalanche | 300 mJ single-pulse EAS - eliminates need for external snubbers in flyback or LLC resonant converter secondary side |
| Optimized body diode | 69 ns trr, 130 nC Qrr - minimizes reverse recovery loss and cross-conduction risk in synchronous rectification |
| SO-8 thermal design | RθJA = 50 °C/W on 1″² copper - allows 2.5 W dissipation at 70°C ambient, sufficient for 10 A continuous in compact VRMs |
Applications
| Telecom Isolated DC-DC Converters | Computer Processor VRMs |
|---|---|
Use Scenario: 48 V to 12 V isolated half-bridge converter with synchronous rectification on secondary side. IC Role / Device Role / Timing Role: Primary-side switch replacement with low RDS(on) and fast switching for improved efficiency at 300–500 kHz. Use Value: 13 mΩ RDS(on) cuts conduction loss by 40% vs. 22 mΩ alternatives, raising full-load efficiency from 92.1% to 93.7%. | Use Scenario: Multiphase buck converter supplying 1.0–1.3 V @ 100+ A to CPU/GPU cores. IC Role / Device Role / Timing Role: High-side or low-side synchronous FET with tight VGS(th) tolerance to prevent shoot-through during 500 ns dead-time windows. Use Value: 1.0–3.0 V gate threshold ensures reliable turn-on with 3.3 V gate drivers and avoids false triggering from noise. |
| Industrial SMPS Power Supplies | High-Frequency Buck Converters |
Use Scenario: 24 V input industrial power supply delivering 5 V/10 A with active clamp forward topology. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 200–400 kHz with zero-voltage switching assist. Use Value: 300 mJ avalanche rating withstands transient overvoltage during clamp capacitor discharge, eliminating need for TVS protection. | Use Scenario: Point-of-load regulator stepping 12 V down to 3.3 V for FPGA I/O banks. IC Role / Device Role / Timing Role: Low-side switch with low Qg and fast fall time (4.1 ns) to minimize switching loss at 1 MHz. Use Value: 21 nC Qg reduces gate driver power consumption by 2.3× vs. 48 nC competitors, easing thermal management on dense PCBs. |
Availability
IRF7471TR is available at Aetrix Electronics and suitable for telecom DC-DC converters, computer processor VRMs, and industrial SMPS requiring stable component supply with consistent SO-8 packaging and traceable manufacturing history.
Supply support for IRF7471TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication facilities.
The IRF7471TR belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-frequency, high-efficiency power conversion in server, telecom, and computing infrastructure where low RDS(on), fast switching, and ruggedness are mandatory.
FAQ
Is IRF7471TR suitable for 3.3 V gate drive applications?
Yes. With RDS(on) = 12–16 mΩ at VGS = 4.5 V and VGS(th) spanning 1.0–3.0 V, the IRF7471TR fully enhances using standard 3.3 V logic-level gate drivers. Its low threshold ensures reliable turn-on even with driver voltage droop under load.
What is the maximum continuous drain current at 70°C ambient?
The datasheet specifies ID = 8.3 A at TA = 70°C with SO-8 mounted on 1 inch² copper board. This rating assumes natural convection and accounts for thermal derating from the 10 A @ 25°C limit using RθJA = 50 °C/W and PD = 1.6 W at 70°C.
Does IRF7471TR have an integrated Schottky body diode?
No. It uses a standard p-n junction body diode with VSD = 0.80 V @ 25°C and trr = 69 ns. While not a Schottky, its reverse recovery is fully characterized and optimized for synchronous rectification - no external diode is needed in properly timed designs.
Can IRF7471TR replace Si7850DP in a 12 V input buck converter?
Yes, with verification. Both are SO-8 N-channel MOSFETs rated for 40 V VDS, but IRF7471TR offers lower RDS(on) (13 mΩ vs. 15 mΩ) and lower Qg (21 nC vs. 26 nC). Layout and gate drive must be re-validated due to differing Ciss (2820 pF vs. 2400 pF) and thermal profile.
IRF7471TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2820 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7471TR FAQ
1.How can I place an order for IRF7471TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7471TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7471TR reliable?
The price and inventory of IRF7471TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7471TR is usually 5 days.
3.What payment methods are accepted for IRF7471TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7471TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7471TR?
IRF7471TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7471TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7471TR?
For technical support, including IRF7471TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7471TR requirements.
6.How does Aetrix verify that IRF7471TR is sourced from the original manufacturer or authorized distributors?
All IRF7471TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7471TR meets industry standards.
7.What is the process for return or replacement of IRF7471TR?
All IRF7471TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7471TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7471TR part is unused and in its original packaging.
Return procedure for IRF7471TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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