Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7471TRPBF

Name: IRF7471TRPBF
Brand: Infineon Technologies
SKU: IRF7471TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7471TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7471TRPBF.pdf

Description:: MOSFET N-CH 40V 10A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,149

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7471TRPBF from Infineon Technologies (formerly International Rectifier) is a 40V, 10A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 13 mΩ R_DS(on) at V_GS = 10 V, features ultra-low gate impedance, fully characterized avalanche capability (300 mJ), and supports continuous drain current up to 10 A at T_A = 25°C - enabling efficient power conversion in telecom and industrial SMPS.

For engineers reviewing the IRF7471TRPBF datasheet, IRF7471TRPBF pinout, IRF7471TRPBF application, or IRF7471TRPBF equivalent, key selection criteria include its 13 mΩ on-resistance at 10 V drive, 21 nC total gate charge, SO-8 thermal performance (R_θJA = 50 °C/W), body diode reverse recovery time (69 ns), and avalanche-rated operation for robust switching reliability.

Technical Context

This MOSFET employs HEXFET® silicon technology with planar gate structure, delivering low conduction loss and fast switching dynamics. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 4.5 V logic-level drive, while the 8.2 nC Miller charge and 2820 pF input capacitance support stable high-frequency operation up to several hundred kHz in hard-switched topologies.

The device integrates a co-packaged body diode with 0.80 V forward voltage at 8.0 A and 69 ns reverse recovery time at 25°C - critical for minimizing commutation losses in synchronous rectifiers. Thermal design is enabled by SO-8's dual-drain configuration (pins 1–4 and 5–8 tied to drain), providing low junction-to-lead resistance (20 °C/W) and scalable power dissipation (2.5 W at 25°C ambient).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12–24 V input rail applications
R_DS(on) max	13 mΩ @ V_GS = 10 V - Enables <130 mW conduction loss at 10 A DC
I_D continuous	10 A @ T_A = 25°C - Supports high-current output stages in compact SMPS
Q_g total	21 nC - Determines gate driver power requirement and switching speed trade-off
t_rr	69 ns @ T_J = 25°C - Reduces turn-off loss and EMI in synchronous rectification
E_AS	300 mJ - Withstands unclamped inductive energy during fault conditions
R_θJA	50 °C/W - Defines heatsinking requirements for ambient-limited operation

Pinout & Package

IRF7471TRPBF is housed in a standard SO-8 surface-mount package per JEDEC MS-012AA, featuring dual drain terminals (pins 1–4 and 5–8) for enhanced current handling and thermal spreading, plus dedicated gate (pin 3) and source (pins 6–7) connections.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	High-side switch node connection; electrically common with pins 5–8 for parallel current path
5, 6, 7, 8	Drain (D) / Source (S)	Pins 5 & 8: Drain; pins 6 & 7: Source - dual-source layout reduces source inductance in high-di/dt switching
3	Gate (G)	Control terminal requiring ≤3.0 V threshold; driven directly by PWM controller or gate driver IC
6, 7	Source (S)	Return path for load current; low-inductance tie to ground plane improves switching stability

Key Features

Feature	Design Value
Ultra-low R_DS(on)	13 mΩ at 10 V drive - minimizes I²R losses in high-current, low-voltage outputs
Low Q_gd/Q_g ratio	8.2/21 nC - improves hard-switching immunity and reduces Miller-induced shoot-through risk
Fast body diode recovery	69 ns t_rr - enables zero-voltage switching (ZVS) assist in resonant topologies
Avalanche-rated	300 mJ single-pulse E_AS - eliminates need for external snubbers in inductive load switching
Lead-free & RoHS-compliant	Meets IPC/JEDEC J-STD-020 reflow profile - suitable for lead-free assembly processes

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V to 12 V isolated forward converter with synchronous rectification in base station power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 300–500 kHz with precise gate timing relative to primary-side MOSFET.

Use Value: Achieves >95% efficiency at full load by eliminating 0.4 V diode drop and reducing conduction loss by 60% vs. discrete diode solution.

Use Scenario: Multiphase buck converter supplying core voltage to Intel Xeon processors in data center servers.

IC Role / Device Role / Timing Role: High-current power stage switch operating in continuous conduction mode (CCM); driven by integrated gate driver in PMIC.

Use Value: Delivers 10 A per phase with <130 mW conduction loss and <10 ns propagation delay margin for tight current-sharing control.

Industrial Motor Drives

LED Driver Power Stages

Use Scenario: Half-bridge inverter stage for 24 V BLDC motor control in factory automation equipment.

IC Role / Device Role / Timing Role: High-side switch in three-phase bridge; operated with bootstrap gate drive and dead-time control.

Use Value: Withstands repetitive 8 A pulsed current and 300 mJ avalanche energy during motor stall or short-circuit events.

Use Scenario: Constant-current buck regulator driving high-brightness LED strings in street lighting systems.

IC Role / Device Role / Timing Role: Main switching element modulated at 200–500 kHz; thermally coupled to aluminum PCB for passive cooling.

Use Value: Maintains <15 mΩ on-resistance over -40°C to +125°C junction range, ensuring stable LED current regulation across ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7472TRPBF	Same SO-8 package; 11 mΩ R_DS(on) @ 10 V but higher Q_g (27 nC)	Better conduction loss, worse switching loss at >300 kHz	Prefer for lower-frequency, high-current designs where thermal headroom exists
Si7850DP-T1-GE3	SO-8; 12 mΩ R_DS(on), 19 nC Q_g, but only 30 V V_DS	Limited to ≤30 V input rails; unsuitable for 40 V transient-tolerant designs	Select only when system max V_DS is confirmed ≤30 V and gate drive is 4.5 V compatible

Compared with IRF7471TRPBF, IRF7472TRPBF trades higher gate charge for lower on-resistance - favoring conduction-dominated applications - while Si7850DP-T1-GE3 offers tighter gate charge but sacrifices 10 V of voltage margin, restricting use to strictly regulated 24 V systems.

Availability

IRF7471TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp.

Supply support for IRF7471TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET® MOSFET product line, designed specifically for high-efficiency, high-reliability switching power supplies in telecom infrastructure and computing applications.

FAQ

What is the maximum safe operating temperature for IRF7471TRPBF?

The junction temperature must not exceed +150°C under any operating condition. At T_A = 70°C, the device supports 1.6 W power dissipation with R_θJA = 50 °C/W. Derating begins at 20 mW/°C above 70°C ambient, and thermal shutdown is not built-in - external monitoring or layout-based thermal design is required.

Can IRF7471TRPBF be used in linear (analog) mode operation?

No - this MOSFET is not characterized or rated for linear mode. Its Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤400 µs at I_D = 8 A, and continuous linear use risks thermal runaway due to positive temperature coefficient of R_DS(on). It is intended exclusively for switching applications.

Does IRF7471TRPBF have integrated ESD protection?

No integrated ESD protection circuitry is specified. The device exhibits ±20 V gate-to-source rating, but gate oxide is susceptible to damage from static discharge. Standard handling precautions - grounded workstations, ionized air, and anti-static packaging - are mandatory during PCB assembly and handling.

Is the body diode suitable for freewheeling in non-synchronous buck converters?

Yes - the body diode has 0.80 V forward voltage at 8.0 A and 69 ns reverse recovery time at 25°C, making it usable for low-duty-cycle freewheeling. However, its Q_rr (130 nC) is higher than purpose-built Schottky diodes, so efficiency will be 2–4% lower than with an external diode in high-frequency (>200 kHz), high-current designs.

IRF7471TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2820 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7471TRPBF FAQ

1.How can I place an order for IRF7471TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7471TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7471TRPBF reliable?

The price and inventory of IRF7471TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7471TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7471TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7471TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7471TRPBF?

IRF7471TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7471TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7471TRPBF?

For technical support, including IRF7471TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7471TRPBF requirements.

6.How does Aetrix verify that IRF7471TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7471TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7471TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7471TRPBF?

All IRF7471TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7471TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7471TRPBF part is unused and in its original packaging.

Return procedure for IRF7471TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…