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Infineon Technologies IRF7473PBF
- Part No.:
- IRF7473PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7473PBF.pdf
- Description:
- MOSFET N-CH 100V 6.9A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,571
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Product details
Overview
IRF7473PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 6.9A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-efficiency DC-DC conversion in telecom and datacom systems operating at 24V/48V input rails. It delivers 22 mΩ RDS(on) at VGS = 10V, supports 55A pulsed drain current, and features ultra-low gate charge (61 nC total) for fast switching in half-bridge and full-bridge topologies.
For engineers reviewing the IRF7473PBF datasheet, IRF7473PBF pinout, IRF7473PBF application, or IRF7473PBF equivalent, key selection criteria include its 100V VDSS, 22 mΩ on-resistance at 4.1A, 5.8 V/ns diode recovery dv/dt rating, and SO-8 thermal performance with RθJA = 50°C/W - critical for compact power stage design in space-constrained telecom modules.
Technical Context
This MOSFET employs planar silicon process technology to achieve robust avalanche capability (140 mJ single-pulse EAS) and stable dynamic dv/dt immunity up to 5.8 V/ns. Its gate charge profile (Qgd = 19 nC, Qgs = 21 nC) enables precise timing control in synchronous rectification and PWM-driven bridge circuits.
The device integrates a low-VSD body diode (1.3 V at 4.1A, TJ = 25°C) with 55 ns reverse recovery time and 140 nC Qrr, supporting efficient unclamped inductive switching in flyback and forward converters without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands 48V-input DC-DC bus transients up to 100V without breakdown |
| RDS(on) max | 26 mΩ @ VGS = 10V, ID = 4.1A - Enables <1.1W conduction loss at 5A continuous operation |
| Qg total | 61 nC - Reduces gate drive power and allows use of low-current drivers (e.g., integrated PWM IC outputs) |
| EAS | 140 mJ - Sustains unclamped inductive energy during hard-switching fault conditions |
| dv/dt rating | 5.8 V/ns - Ensures reliable operation under fast voltage transitions in high-frequency SMPS |
| RθJA | 50 °C/W - Limits junction rise to ≤125°C at 2.5W dissipation on standard FR4 PCB |
| tr/tf | 20 ns / 11 ns - Supports >500 kHz switching in resonant and hard-switched topologies |
Pinout & Package
IRF7473PBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pad for enhanced thermal conduction. The package measures 4.9 mm × 6.0 mm × 1.75 mm and supports lead-free reflow soldering up to 300°C for 10 seconds.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Internally connected to common drain metallization; primary current path for high-side or low-side switching |
| 6 | Gate (G) | Control terminal requiring ≤±20V bias; low input capacitance (Ciss = 3180 pF) minimizes driver loading |
| Source (S) | Source (S) | Reference node for gate drive and current sensing; pins 1–5 and 7–8 are internally tied to source via substrate connection |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 22 mΩ typ. @ 10V - Reduces conduction losses by ≥30% vs. legacy 100V SO-8 MOSFETs in 48V telecom PSUs |
| Optimized gate charge | Qgd/Qgs = 0.9 - Improves Miller immunity and enables clean turn-off in high-dv/dt environments |
| Enhanced avalanche ruggedness | 140 mJ EAS - Eliminates need for external clamping in 48V offline flyback designs |
| Fast body diode recovery | trr = 55 ns, Qrr = 140 nC - Minimizes reverse recovery loss in synchronous rectifier applications |
Applications
| Telecom DC-DC Converters | Datacom Power Modules |
|---|---|
Use Scenario: 48V-to-12V isolated buck-derived converter in carrier-grade line cards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in active-clamp forward topology. Use Value: 22 mΩ RDS(on) cuts conduction loss by 0.55W vs. 35 mΩ alternative, improving efficiency from 92.1% to 93.4% at 20A load. | Use Scenario: 24V intermediate bus converter powering FPGA and ASIC core rails. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving resonant LLC tank. Use Value: 61 nC total gate charge enables clean 300 kHz switching with TI UCC25630 controller, reducing gate drive loss by 42%. |
| Motor Control Drives | Uninterruptible Power Supplies |
Use Scenario: 24V BLDC gate driver stage for industrial HVAC fan modules. IC Role / Device Role / Timing Role: Phase-leg low-side switch controlling motor winding current commutation. Use Value: 5.8 V/ns dv/dt rating prevents false turn-on during rapid bus voltage transitions, eliminating shoot-through risk. | Use Scenario: Battery backup in-line UPS with bidirectional 48V/24V DC-DC stage. IC Role / Device Role / Timing Role: Bidirectional switch enabling seamless transfer between AC-derived and battery-derived power paths. Use Value: 140 mJ avalanche energy rating sustains 100 ms overload events during grid failure without desaturation or latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK100ZFP | 1000V VDSS, 10A ID, TO-220 package, RDS(on) = 1Ω | Designed for high-voltage AC-DC PFC; unsuitable for 48V DC-DC due to excessive on-resistance | Select only if system requires >600V blocking and board space permits through-hole mounting |
| SiR872DP | 100V VDSS, 7.2A ID, SO-8, RDS(on) = 20 mΩ, Qg = 54 nC | Lower gate charge improves switching efficiency but lacks published dv/dt rating and avalanche data | Prefer for high-frequency (>1 MHz) designs where gate drive loss dominates; verify dv/dt immunity in final layout |
Compared with STP10NK100ZFP and SiR872DP, IRF7473PBF offers balanced trade-offs: verified 5.8 V/ns dv/dt immunity and 140 mJ EAS make it more robust than SiR872DP in noisy telecom environments, while its 22 mΩ RDS(on) and SO-8 footprint provide superior power density versus the TO-220 STP10NK100ZFP.
Availability
IRF7473PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, datacom power modules, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF7473PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with over 40 years of MOSFET innovation.
The IRF7473PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC-DC conversion in telecom infrastructure and enterprise networking equipment.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRF7473PBF supports 5.5 A continuous drain current at TA = 70°C with VGS = 10V, derated from 6.9 A at 25°C using the specified linear derating factor of 0.02 W/°C and RθJA = 50°C/W. This value assumes SO-8 mounting on standard FR4 with 1-inch² copper pour.
Does IRF7473PBF have a qualified lead-free finish?
Yes - the "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and passes JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C for standard process and 300°C for 10 seconds per the datasheet.
Can IRF7473PBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.11 V/°C for V(BR)DSS) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance and symmetrical PCB layout; typical designs use 2–4 devices for >20A output stages in 48V telecom rectifiers.
What is the recommended gate resistor for hard-switched half-bridge operation?
A 6.0 Ω gate resistor is specified in the datasheet for switching time characterization (td(on) = 24 ns, tf = 11 ns). For 300–500 kHz operation with UCC27531 or similar drivers, 5.6 Ω provides optimal trade-off between switching loss and EMI; values below 4.7 Ω increase ringing risk without meaningful speed gain.
IRF7473PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 61 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7473PBF FAQ
1.How can I place an order for IRF7473PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7473PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7473PBF reliable?
The price and inventory of IRF7473PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7473PBF is usually 5 days.
3.What payment methods are accepted for IRF7473PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7473PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7473PBF?
IRF7473PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7473PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7473PBF?
For technical support, including IRF7473PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7473PBF requirements.
6.How does Aetrix verify that IRF7473PBF is sourced from the original manufacturer or authorized distributors?
All IRF7473PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7473PBF meets industry standards.
7.What is the process for return or replacement of IRF7473PBF?
All IRF7473PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7473PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7473PBF part is unused and in its original packaging.
Return procedure for IRF7473PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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