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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7473TRPBF

Name: IRF7473TRPBF
Brand: Infineon Technologies
SKU: IRF7473TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7473TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7473TRPBF.pdf

Description:: MOSFET N-CH 100V 6.9A 8SO

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Product details

Overview

IRF7473TRPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 6.9A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-efficiency DC-DC converters in telecom and datacom systems. It delivers 22 mΩ R_DS(on) at V_GS = 10 V, supports 55 A pulsed drain current, and features ultra-low gate charge (61 nC total) for fast switching in half-bridge and forward topologies operating at 24 V or 48 V input.

For engineers reviewing the IRF7473TRPBF datasheet, IRF7473TRPBF pinout, IRF7473TRPBF application, or IRF7473TRPBF equivalent, key selection criteria include its 100 V V_DSS, 22–26 mΩ on-resistance, 61 nC gate charge, 5.8 V/ns diode recovery dv/dt rating, and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon process technology to achieve robust avalanche capability (140 mJ single-pulse E_AS) and improved dynamic dv/dt immunity. Its gate charge profile-21 nC Q_gs, 19 nC Q_gd, and 61 nC Q_g-enables precise timing control in synchronous rectification and PWM-driven topologies.

The device integrates a low-V_SD body diode (1.3 V @ 4.1 A, T_J = 25 °C) with 55 ns reverse recovery time and 140 nC Q_rr, supporting efficient unclamped inductive switching in flyback and LLC resonant converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V bus systems with margin.
R_DS(on) max	26 mΩ @ V_GS = 10 V, I_D = 4.1 A - Enables low conduction loss in high-current power stages.
I_D continuous	6.9 A @ T_A = 25 °C - Supports sustained output currents in compact SO-8 footprint DC-DC modules.
Q_g total	61 nC - Reduces gate drive power and enables >500 kHz switching in high-frequency SMPS designs.
E_AS	140 mJ - Provides reliable unclamped inductive switching capability without external clamping.
dv/dt rating	5.8 V/ns - Ensures noise-immune operation in high-di/dt environments like motor drives and UPS inverters.

Pinout & Package

IRF7473TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal dissipation. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports reflow soldering up to 300 °C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Parallel-connected high-current output path; pins 1–4 and 6–8 are internally tied to drain metallization for low-inductance layout.
5	Gate (G)	Control terminal requiring <61 nC charge to switch 6.9 A; sensitive to ESD (±20 V absolute max V_GS).
Source (S)	Source (S)	Common reference node for gate drive and current sensing; pins 5 and 8 are source terminals in dual-source SO-8 variant.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	22 mΩ typical at 10 V drive - reduces I²R losses by >30% vs. legacy 30 mΩ SO-8 MOSFETs in 48 V telecom PSUs.
Optimized gate charge	Q_gd/Q_g = 31% - minimizes Miller-induced switching delay and improves hard-switching efficiency.
Enhanced avalanche ruggedness	140 mJ E_AS - eliminates need for external avalanche clamps in UPS and motor control H-bridges.
Fast body diode recovery	t_rr = 55 ns, Q_rr = 140 nC - enables zero-voltage switching (ZVS) in resonant topologies without shoot-through risk.

Applications

Telecom DC-DC Converters

Datacom Power Modules

Use Scenario: 48 V input, 12 V/20 A isolated forward converter in carrier-grade base station power supply.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive.

Use Value: 22 mΩ R_DS(on) cuts conduction loss by 1.8 W vs. 30 mΩ alternatives, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: Dual-phase 24 V input buck converter powering 1 V/120 A ASIC core in enterprise switch line card.

IC Role / Device Role / Timing Role: High-side power switch in interleaved topology with 500 kHz PWM and active gate control.

Use Value: 61 nC Q_g allows use of low-power gate drivers (e.g., IR2110), reducing driver BOM cost by $0.32 per phase.

Uninterruptible Power Supplies

Industrial Motor Control

Use Scenario: Bidirectional DC link switch in online UPS inverter stage handling 3 kVA load with battery backup.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter with 10 kHz fundamental and 20 kHz PWM carrier.

Use Value: 5.8 V/ns dv/dt rating prevents false turn-on during high-di/dt commutation, eliminating need for negative gate bias.

Use Scenario: Phase-leg switch in 24 V BLDC motor controller for automated guided vehicle (AGV) traction system.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch subjected to repetitive unclamped inductive loads.

Use Value: 140 mJ E_AS withstands worst-case stall conditions without failure, extending field MTBF beyond 100,000 hours.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7474TRPBF	Same SO-8 package, but 80 V V_DSS, 32 mΩ R_DS(on), 50 nC Q_g	Better suited for 24 V systems with tighter gate drive constraints; lower voltage rating limits 48 V bus use.	Select when prioritizing gate drive simplicity over 48 V headroom and conduction loss.
SiHFR024R-EP	100 V, 24 mΩ, 52 nC Q_g, TO-252 package (not SO-8)	Higher thermal performance (R_θJA = 40 °C/W) but requires PCB redesign; no pin compatibility.	Choose for higher power density where board space permits larger package and improved thermal management.

Compared with IRF7474TRPBF and SiHFR024R-EP, IRF7473TRPBF uniquely balances 100 V rating, 22 mΩ conduction loss, and SO-8 footprint-making it optimal for space-constrained 48 V telecom DC-DC converters needing both voltage margin and efficiency.

Availability

IRF7473TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, datacom power modules, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF7473TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in telecom infrastructure, server power supplies, and industrial motor drives.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF7473TRPBF has a rated operating junction temperature range of –55 °C to +150 °C. Continuous operation at T_J = 150 °C is permitted only when derated per the linear derating factor of 0.02 W/°C above 25 °C ambient, and thermal design must ensure case temperature remains ≤125 °C under full load.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 6.0 Ω, as used in characterization) is recommended to dampen ringing caused by gate loop inductance and prevent oscillation. The device's 19 nC Q_gd and 3180 pF C_iss make it susceptible to Miller-induced instability without proper gate resistance and PCB layout control.

Can IRF7473TRPBF be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive R_DS(on) temperature coefficient (0.11 V/°C breakdown voltage drift) supports current sharing, yet thermal coupling between SO-8 packages must be minimized using separate thermal vias and copper pours to avoid thermal runaway at >5 A per device.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode has 1.3 V forward drop and 55 ns t_rr, making it unsuitable for high-frequency synchronous rectification. External Schottky or GaN FETs are preferred for <100 kHz ZVS/ZCS rectification; this MOSFET is intended as a controlled switch, not a freewheeling diode.

IRF7473TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 6.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7473TRPBF FAQ

1.How can I place an order for IRF7473TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7473TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7473TRPBF reliable?

The price and inventory of IRF7473TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7473TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7473TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7473TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7473TRPBF?

IRF7473TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7473TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7473TRPBF?

For technical support, including IRF7473TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7473TRPBF requirements.

6.How does Aetrix verify that IRF7473TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7473TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7473TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7473TRPBF?

All IRF7473TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7473TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7473TRPBF part is unused and in its original packaging.

Return procedure for IRF7473TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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