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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7475PBF

Name: IRF7475PBF
Brand: Infineon Technologies
SKU: IRF7475PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7475PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7475PBF.pdf

Description:: MOSFET N-CH 12V 11A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7475PBF from Infineon Technologies is a 12 V, 11.5 mΩ (typ), 8.8 A N-channel HEXFET Power MOSFET in SO-8 package, optimized as the synchronous FET in high-frequency point-of-load buck converters for networking and computing systems. It features ultra-low gate impedance (Qg = 13 nC typ), low R_DS(on) at 4.5 V V_GS, and fully characterized avalanche capability (E_AS = 180 mJ).

For engineers reviewing the IRF7475PBF datasheet, IRF7475PBF pinout, IRF7475PBF application, or IRF7475PBF equivalent, key selection criteria include R_DS(on) @ 4.5 V, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 44–66 nC), thermal resistance (R_θJA = 50 °C/W), and SO-8 lead-free packaging compliance.

Technical Context

This device operates as the low-side synchronous rectifier in non-isolated DC/DC converters, where its low R_DS(on) minimizes conduction loss while its gate charge profile (Q_gd = 3.9 nC, Q_gs2 = 1.5 nC) directly impacts switching loss and C_dv/dt turn-on risk. The integrated body diode exhibits V_SD = 1.3 V max and t_rr = 42–63 ns under specified conditions.

Its thermal design is constrained by R_θJA = 50 °C/W and R_θJL = 20 °C/W, with safe operating area limited by R_DS(on) up to 100 A pulsed current. Junction temperature range is –55 °C to +150 °C, supporting operation in thermally demanding server and telecom power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum drain-source blocking voltage; defines use in ≤12 V input buck topologies.
R_DS(on) @ 4.5 V	15 mΩ max - Enables efficient operation with 4.5 V gate drive from common controller ICs.
Q_g	13 nC typ - Low total gate charge reduces driver power loss and enables high-frequency switching.
Q_gd/Q_gs1	3.9 nC / 2.6 nC - Ratio < 1.5 mitigates C_dv/dt induced turn-on in high-dV/dt synchronous nodes.
Q_rr	44–66 nC - Body diode reverse recovery charge directly contributes to control-FET losses and EMI.
R_θJA	50 °C/W - Thermal resistance limits power dissipation to ~1.6 W at 25 °C ambient without heatsink.
E_AS	180 mJ - Single-pulse avalanche energy rating supports robustness against inductive switching transients.

Pinout & Package

IRF7475PBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin numbering follows JEDEC MS-012AA, with pins 1–3 and 5–7 as source terminals, pin 4 as gate, and pins 8, 6, 2, and 1 connected to drain (commonly tied internally).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Common high-current drain connection; pins 1/2/3/5/6/7/8 are internally paralleled to minimize inductance and resistance.
4	Gate (G)	Control terminal; low-input capacitance (C_iss = 1590 pF) enables fast switching with minimal driver effort.
1, 3, 5, 7	Source (S)	Multiple source pins reduce loop inductance; critical for minimizing shoot-through and ringing in high-dI/dt applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	11.5 mΩ typ - Enables use with 5 V logic-level gate drivers in compact POL modules.
Fully characterized avalanche	E_AS = 180 mJ at T_J = 25 °C - Guarantees ruggedness during unclamped inductive switching events.
Optimized gate charge profile	Q_gd/Q_gs1 = 1.5 - Reduces susceptibility to parasitic turn-on in high-dV/dt synchronous rectifier position.
Low reverse recovery charge	Q_rr = 44–66 nC - Limits cross-conduction loss and stress on the high-side control FET.
Lead-free SO-8 package	RoHS-compliant, JEDEC-standard footprint - Ensures drop-in compatibility with existing PCB layouts and reflow processes.

Applications

Server VRM Point-of-Load

Networking Switch PSU

Use Scenario: 12 V input to 1.2 V/100 A output VRM supplying CPU core power in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: 11.5 mΩ R_DS(on) at 4.5 V reduces conduction loss by >25% vs. legacy 20 mΩ devices, improving full-load efficiency by ~0.8%.

Use Scenario: 12 V intermediate bus powering 3.3 V/20 A line cards in enterprise Ethernet switches.

IC Role / Device Role / Timing Role: Low-side switch in single-phase synchronous buck regulator with tight layout constraints.

Use Value: Ultra-low Q_gd (3.9 nC) and Q_gs2 (1.5 nC) enable clean 1 MHz switching with minimal gate drive loss and reduced EMI.

High-Density Telecom PSU

GPU Memory Rail Converter

Use Scenario: Compact 48 V to 12 V intermediate bus converter feeding downstream POLs in 5G baseband units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC secondary stage.

Use Value: Fully characterized avalanche rating (180 mJ) ensures reliability during transient overloads and startup surges.

Use Scenario: 12 V to 1.05 V/60 A GPU memory rail converter operating at 800 kHz in gaming laptops.

IC Role / Device Role / Timing Role: High-current low-side FET with paralleled source/drain pins to minimize package inductance.

Use Value: Multiple source (pins 1/3/5/7) and drain (pins 1/2/3/5/6/7/8) terminals reduce loop inductance by ~40%, suppressing voltage spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 9.5 mΩ @ 4.5 V; Q_g = 17.5 nC; SO-8 with enhanced thermal pad	Lower R_DS(on) but higher Q_g; better thermal R_θJA (40 °C/W)	Preferred for thermally constrained designs needing lower conduction loss; requires stronger gate driver.
IPB120N12N3G	R_DS(on) = 10.5 mΩ @ 4.5 V; Q_g = 14.5 nC; TO-263-7 package	Larger footprint; higher current rating (120 A); no SO-8 pin compatibility	Used when board space allows larger package and higher peak current handling is required.

Compared with IRF7475PBF, SiR872DP offers lower conduction loss but demands more gate drive power, while IPB120N12N3G provides higher current capacity at the cost of PCB real estate and assembly complexity-making IRF7475PBF optimal for space-constrained, high-frequency SO-8 POL designs.

Availability

IRF7475PBF is available at Aetrix Electronics and suitable for server VRMs, networking switch PSUs, and telecom intermediate bus converters requiring stable component supply, RoHS compliance, and SO-8 footprint continuity.

Supply support for IRF7475PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line targets high-efficiency, high-frequency DC/DC conversion with emphasis on low R_DS(on), fast switching, and rugged avalanche performance for computing and communications infrastructure.

FAQ

Is IRF7475PBF suitable for 3.3 V gate drive?

No. IRF7475PBF has a gate threshold voltage range of 0.6–2.0 V, but its R_DS(on) is only guaranteed at V_GS ≥ 4.5 V (15 mΩ max). At 3.3 V, R_DS(on) rises significantly (>30 mΩ), increasing conduction loss and thermal stress. It requires ≥4.5 V gate drive for rated performance.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D = 7.0 A at T_A = 100°C with PCB mounting per JEDEC standards. At T_C = 100°C, derating applies: Fig 9 shows ~6.5 A maximum for reliable long-term operation with adequate copper area and airflow.

Does IRF7475PBF have an integrated Schottky diode?

No. It contains a monolithic body diode formed by the MOSFET's inherent p-n junction. This diode has V_SD = 1.3 V max and t_rr = 42–63 ns - not a low-V_F, fast-recovery Schottky. External Schottky bypass is not recommended due to potential shoot-through; instead, optimize gate timing and layout.

Can IRF7475PBF replace IRF7470PBF in existing designs?

Yes, with verification. Both are SO-8 N-channel 12 V MOSFETs, but IRF7475PBF has lower R_DS(on) (11.5 mΩ vs. 14 mΩ typ @ 4.5 V) and slightly higher Q_g (13 nC vs. 11 nC). Layout and gate driver strength should be confirmed, especially for >1 MHz operation where Q_gd impact increases.

IRF7475PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 8.8A, 4.5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1590 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7475PBF FAQ

1.How can I place an order for IRF7475PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7475PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7475PBF reliable?

The price and inventory of IRF7475PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7475PBF is usually 5 days.

3.What payment methods are accepted for IRF7475PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7475PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7475PBF?

IRF7475PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7475PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7475PBF?

For technical support, including IRF7475PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7475PBF requirements.

6.How does Aetrix verify that IRF7475PBF is sourced from the original manufacturer or authorized distributors?

All IRF7475PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7475PBF meets industry standards.

7.What is the process for return or replacement of IRF7475PBF?

All IRF7475PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7475PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7475PBF part is unused and in its original packaging.

Return procedure for IRF7475PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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