Infineon Technologies IRF7475TRPBF

Overview

IRF7475TRPBF from Infineon Technologies is a 12 V, 11.5 mΩ (typ), 8.8 A N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, optimized for high-frequency synchronous buck converter control FETs in point-of-load applications for networking and computing systems.

For engineers reviewing the IRF7475TRPBF datasheet, IRF7475TRPBF pinout, IRF7475TRPBF application, or IRF7475TRPBF equivalent, key selection criteria include R_DS(on) @ 4.5 V (15 mΩ max), Q_g (13–19 nC), C_iss/C_oss/C_rss (1590/1310/260 pF), avalanche energy rating (180 mJ), and SO-8 thermal performance (R_θJA = 50 °C/W).

Technical Context

This device operates as a low-side control FET in non-isolated DC/DC converters, where fast switching, low gate charge, and robust body diode recovery are critical. Its 12 V V_DSS, 11.5 mΩ R_DS(on) at 4.5 V V_GS, and 19 nC total gate charge enable efficient operation at >500 kHz switching frequencies.

The integrated body diode exhibits t_rr = 42–63 ns and Q_rr = 44–66 nC, directly impacting shoot-through risk and loss distribution in synchronous rectification. Thermal design leverages SO-8's R_θJL = 20 °C/W and linear derating of 0.02 W/°C above 70 °C ambient.

Key Specifications

Pinout & Package

IRF7475TRPBF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin numbering follows JEDEC MS-012AA, with pins 1–3 and 5–7 forming parallel drain terminals, pin 4 as gate, and pins 6–8 as source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7475TRPBF delivers the best balance of low R_DS(on) at 4.5 V and moderate Q_g for 500 kHz–1 MHz synchronous buck converters, while its fully characterized avalanche rating provides superior ruggedness in mission-critical computing power delivery.

Availability

IRF7475TRPBF is available at Aetrix Electronics and suitable for server VRMs, networking ASIC core supplies, and AI accelerator memory rails requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRF7475TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial applications, emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRF7475TRPBF suitable for use as a synchronous rectifier FET?

Yes. IRF7475TRPBF is specifically designed for synchronous rectification in buck converters, with characterized body diode parameters (t_rr = 42–63 ns, Q_rr = 44–66 nC) and low R_DS(on) at 4.5 V, enabling efficient replacement of Schottky diodes in 12 V input PoL stages without compromising thermal or EMI performance.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS is ±12 V, but Infineon specifies full R_DS(on) characterization at 4.5 V and 10 V. For optimal reliability and lifetime, gate drive should be limited to 10 V maximum in continuous operation; exceeding 12 V risks oxide degradation and parametric shift over time.

Does IRF7475TRPBF require a heatsink in SO-8 footprint applications?

No external heatsink is required for typical PoL applications up to 8.8 A continuous current at T_A ≤ 70 °C, due to its SO-8 package R_θJA of 50 °C/W and R_θJL of 20 °C/W. However, PCB copper area ≥ 200 mm² per drain pad and thermal vias to inner ground planes are mandatory to maintain T_J < 125 °C under full load.

How does the avalanche rating impact system-level reliability?

The 180 mJ single-pulse avalanche energy rating allows IRF7475TRPBF to safely absorb inductive energy during fault conditions-such as output short-circuits or controller timing faults-without catastrophic failure. This eliminates the need for external clamping circuits in space-constrained server and networking power modules, improving system MTBF.