Infineon Technologies IRF7476

Overview

IRF7476PbF from Infineon Technologies (formerly International Rectifier) is a 12 V, 15 A, 8.0 mΩ logic-level N-channel HEXFET Power MOSFET in SO-8 package, optimized for synchronous buck converter high-side or low-side switching in 3.3 V/5 V gate-drive systems. It features ultra-low R_DS(on), fully characterized avalanche capability (160 mJ), and fast switching (t_r = 29 ns, t_f = 8.3 ns) for point-of-load power management in netcom and computing applications.

For engineers reviewing the IRF7476PbF datasheet, IRF7476PbF pinout, IRF7476PbF application, or IRF7476PbF equivalent, key selection criteria include its 4.5 V gate-threshold compatibility, 120 A pulsed drain rating, SO-8 thermal performance (R_θJA = 50 °C/W), body diode reverse recovery (Q_rr = 59–90 nC), and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell pitch and trench-assisted charge balancing to achieve low on-resistance at logic-level gate drive. Its gate threshold voltage (0.6–1.9 V) ensures reliable turn-on with 3.3 V microcontroller outputs, while the 12 V V_DS rating targets low-voltage DC-DC stages where overvoltage margin is constrained.

The device integrates a robust intrinsic body diode with controlled reverse recovery (t_rr = 54–82 ns, Q_rr = 59–90 nC) and specified avalanche energy (E_AS = 160 mJ), enabling unclamped inductive switching in synchronous rectification without external snubbers.

Key Specifications

Pinout & Package

IRF7476PbF is housed in a standard SO-8 surface-mount package (JEDEC MS-012, EIA-481 compliant), featuring exposed drain pads for enhanced thermal dissipation when soldered to copper planes. The package measures 4.9 × 6.0 mm with 1.27 mm pitch and supports reflow soldering per IPC/JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN10H015LPS-13, IRF7476PbF offers the best balance of low R_DS(on), controlled Q_rr, and verified avalanche ruggedness-making it preferred for thermally dense, high-reliability PoL converters where transient robustness is non-negotiable.

Availability

IRF7476PbF is available at Aetrix Electronics and suitable for point-of-load synchronous buck converters, low-voltage DC-DC regulators for networking equipment, and portable computing power management requiring stable component supply across production lifecycles.

Supply support for IRF7476PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7476PbF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space- and thermally-constrained consumer and computing applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7476PbF supports 12 A continuous drain current at T_A = 70°C with proper PCB copper area (1 inch²). This rating assumes SO-8 mounting on FR-4 with 2 oz copper and is derived from its 1.6 W power dissipation limit and 50 °C/W junction-to-ambient thermal resistance.

Does IRF7476PbF have a specified avalanche current rating?

Yes, the device specifies I_AR = 12 A as the maximum repetitive avalanche current under defined test conditions (L = 2.3 mH, R_G = 25 Ω, T_J starting at 25°C). This complements its 160 mJ single-pulse E_AS rating for transient overload handling.

Can IRF7476PbF be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (see Fig 4) enables stable current sharing when paralleled. Designers must match gate drive impedance and layout symmetry to minimize dynamic imbalance, especially given its 11 nC Miller charge.

Is the SO-8 package thermally enhanced?

The SO-8 package uses standard JEDEC MS-012 dimensions with no internal thermal pad, but its four paralleled drain pins serve as primary thermal paths to PCB copper. Thermal performance improves significantly with ≥1 inch² of 2 oz copper connected to pins 1–4, achieving near-case-limited R_θJA ≈ 35 °C/W in optimized layouts.