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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7476TRPBF

Name: IRF7476TRPBF
Brand: Infineon Technologies
SKU: IRF7476TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7476TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7476TRPBF.pdf

Description:: MOSFET N-CH 12V 15A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7476TRPBF from Infineon Technologies (formerly International Rectifier) is a 12 V, 15 A, N-channel logic-level Power MOSFET in SO-8 package with 8.0 mΩ R_DS(on) at V_GS = 4.5 V, optimized for synchronous buck converters in point-of-load power management for networking and computing systems.

For engineers reviewing the IRF7476TRPBF datasheet, IRF7476TRPBF pinout, IRF7476TRPBF application, or IRF7476TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (3.3 V/5 V), ultra-low on-resistance, fast switching (t_r = 29 ns, t_f = 8.3 ns), and fully characterized avalanche capability (E_AS = 160 mJ).

Technical Context

This device operates as a high-side or low-side switch in DC-DC conversion stages, featuring a logic-compatible gate threshold (V_GS(th) = 0.6–1.9 V) and robust body diode with t_rr = 55–82 ns and Q_rr = 59–90 nC. Its SO-8 thermal design supports 2.5 W P_D at T_A = 25°C with R_θJA = 50 °C/W.

The MOSFET delivers stable R_DS(on) over temperature (normalized to 2.0× at 150°C), integrates low gate charge (Q_g = 26–40 nC), and sustains repetitive unclamped inductive switching up to I_AS = 12 A and E_AS = 160 mJ under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum blocking voltage for low-voltage POL rails
R_DS(on) max	8.0 mΩ @ V_GS = 4.5 V - Enables <15 mΩ total conduction loss in dual-phase sync-buck designs
I_D continuous	15 A @ T_A = 25°C - Supports high-current CPU/GPU core rails with minimal heatsinking
Q_g	26–40 nC - Reduces gate drive power and enables >1 MHz switching with standard drivers
t_r/t_f	29 ns / 8.3 ns - Minimizes switching transition losses in high-frequency converters
E_AS	160 mJ - Withstands energy from inductive transients without failure in non-isolated topologies
C_iss	2550 pF - Predictable input capacitance for gate driver sizing and loop stability analysis

Pinout & Package

IRF7476TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pads for enhanced thermal performance. The package measures 4.9 × 6.0 mm and features gull-wing leads compatible with automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel internal drain connections reduce current density and improve thermal spreading
5	Gate (G)	Single gate input with low impedance for fast turn-on using 3.3 V logic-level drivers
6, 7, 8	Source (S)	Three-source terminals minimize source inductance and improve body diode commutation

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for level-shifting in 3.3 V control systems
Ultra-low R_DS(on)	8.0 mΩ at 4.5 V enables <100 mW conduction loss at 12 A, reducing thermal load on PCB
Fully characterized avalanche	Rated for 160 mJ single-pulse energy, supporting reliable operation in unclamped inductive switching
Low gate charge	Q_g ≤ 40 nC minimizes driver power dissipation and simplifies gate driver selection
Optimized body diode	Q_rr = 59–90 nC and t_rr = 55–82 ns enable efficient synchronous rectification in buck topologies

Applications

Server VRM Core Rail

Network Switch PoL Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase-legs, switching at 500 kHz–1 MHz.

Use Value: 8.0 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 12 V MOSFETs, lowering junction temperature rise by ~12°C at 12 A.

Use Scenario: Point-of-load regulator powering ASIC/FPGA I/O banks (1.8 V, 3.3 V) in enterprise Ethernet switches.

IC Role / Device Role / Timing Role: High-side switch in compact 2-layer PCB layout with tight thermal constraints.

Use Value: Logic-level gate compatibility eliminates external level shifters, saving board space and BOM cost while maintaining <10 ns propagation delay margin.

Portable SSD Power Stage

Industrial PLC Digital Output Driver

Use Scenario: Dual-phase 5 V input → 3.3 V output converter for NVMe SSD controller and NAND flash power domains.

IC Role / Device Role / Timing Role: Low-side switch paired with integrated high-side controller, operating at 1.2 MHz with forced PWM mode.

Use Value: Fast t_f = 8.3 ns ensures clean dead-time control, preventing shoot-through and enabling >92% efficiency at 5 A load.

Use Scenario: Solid-state replacement for electromechanical relays in 24 V digital output modules driving solenoids and indicators.

IC Role / Device Role / Timing Role: Low-side load switch with integrated protection, controlled via isolated microcontroller GPIO.

Use Value: 12 V V_DS rating and 120 A pulsed current capability support 100 ms inrush surges from inductive loads without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 7.5 mΩ @ 4.5 V; Q_g = 32 nC; SO-8 package	Slightly lower R_DS(on) but higher C_iss (2800 pF); less avalanche-rated (E_AS not specified)	Preferred where lowest conduction loss dominates; verify avalanche margin in unclamped circuits
DMN3020LSD-13	R_DS(on) = 10.5 mΩ @ 4.5 V; Q_g = 22 nC; SO-8 package	Lower gate charge improves switching efficiency but higher R_DS(on) increases conduction loss at >10 A	Better for high-frequency, medium-current (<8 A) applications where gate drive loss is critical

Compared with Si7852DP-T1-GE3 and DMN3020LSD-13, IRF7476TRPBF offers balanced trade-offs: superior avalanche ruggedness (160 mJ), tighter R_DS(on) tolerance (6.0–8.0 mΩ), and proven reliability in high-reliability computing power stages.

Availability

IRF7476TRPBF is available at Aetrix Electronics and suitable for server VRM core rails, network switch PoL converters, and portable SSD power stages requiring stable component supply and long-term industrial availability.

Supply support for IRF7476TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line-originally developed by International Rectifier and now part of Infineon-is engineered for high-efficiency, high-reliability DC-DC conversion in computing, networking, and industrial power systems.

FAQ

What is the maximum safe operating frequency for IRF7476TRPBF in a synchronous buck converter?

IRF7476TRPBF supports switching frequencies up to 1.5 MHz in well-designed layouts, based on its 29 ns rise time and 8.3 ns fall time. At 1 MHz, total switching loss remains below 120 mW with 12 A load and 12 V input, assuming optimized gate drive (RG = 1.8 Ω) and minimal PCB parasitics.

Does IRF7476TRPBF require a gate resistor for stability in high-speed applications?

Yes-a series gate resistor (1.0–2.2 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 450 pF) and PCB inductance. Without it, overshoot exceeding ±15 V may occur during turn-on, risking gate oxide stress under transient conditions.

Can IRF7476TRPBF be used in parallel configurations for higher current handling?

Yes-its positive R_DS(on) temperature coefficient (0.014 V/°C) enables natural current sharing. Parallel operation requires matched layout symmetry, identical gate drive paths, and thermal coupling; tested configurations show <5% current imbalance at 30 A total with two devices.

Is the body diode of IRF7476TRPBF suitable for asynchronous rectification?

No-the body diode is optimized for synchronous rectification only. Its reverse recovery charge (Q_rr = 59–90 nC) and time (t_rr = 55–82 ns) are too high for efficient asynchronous use above 200 kHz; synchronous control is required to avoid excessive diode conduction loss and thermal runaway.

IRF7476TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7476TRPBF FAQ

1.How can I place an order for IRF7476TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7476TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7476TRPBF reliable?

The price and inventory of IRF7476TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7476TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7476TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7476TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7476TRPBF?

IRF7476TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7476TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7476TRPBF?

For technical support, including IRF7476TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7476TRPBF requirements.

6.How does Aetrix verify that IRF7476TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7476TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7476TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7476TRPBF?

All IRF7476TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7476TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7476TRPBF part is unused and in its original packaging.

Return procedure for IRF7476TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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