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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7477PBF

Name: IRF7477PBF
Brand: Infineon Technologies
SKU: IRF7477PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7477PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7477PBF.pdf

Description:: MOSFET N-CH 30V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7477PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 14A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency synchronous buck converters in computing and communications power supplies. It features 8.5 mΩ R_DS(on) at V_GS = 10 V, ultra-low gate charge (Q_g = 25–38 nC), and fully characterized avalanche capability (E_AS = 500 mJ).

For engineers reviewing the IRF7477PBF datasheet, IRF7477PBF pinout, IRF7477PBF application, or IRF7477PBF equivalent, key selection criteria include its low R_DS(on)/Q_g ratio for efficiency in 500 kHz–1 MHz DC-DC stages, SO-8 thermal performance (R_θJA = 50 °C/W), and body diode recovery specs (t_rr = 91–140 ns, Q_rr = 130–210 nC) critical for synchronous rectification.

Technical Context

This MOSFET employs trench-gate HEXFET technology to achieve low conduction loss and fast switching with minimal Miller effect-evidenced by C_iss = 2710 pF, C_oss = 1120 pF, and Crss = 100 pF at V_DS = 15 V. Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) enables 4.5 V logic-level drive compatibility.

The device integrates a robust intrinsic body diode with V_SD = 0.65–0.80 V at I_S = 11 A and controlled reverse recovery (Q_rr, t_rr) to minimize shoot-through risk in synchronous topologies. Avalanche rating (I_AR = 8.2 A, E_AS = 500 mJ) supports unclamped inductive switching reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rails with margin
R_DS(on) @ V_GS = 10 V	8.5 mΩ - Enables ≤1.2 W conduction loss at 14 A continuous current
Q_g	25–38 nC - Low gate drive energy reduces controller loading and switching loss
t_rr	91–140 ns - Fast body diode recovery minimizes dead-time losses in sync buck
E_AS	500 mJ - Supports reliable operation under unclamped inductive load transients
R_θJA	50 °C/W - Thermal limit of 1.6 W power dissipation at 70 °C ambient on standard PCB
V_GS(th)	1.0–2.5 V - Ensures turn-on with 3.3 V or 5 V gate drivers without level-shifting

Pinout & Package

IRF7477PBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel internal drain connections - primary current path and thermal conduction path to PCB copper
6	Gate (G)	Control terminal - low capacitance (C_iss = 2710 pF) enables fast, low-energy switching
Source (S)	Source (S)	Terminal 6 is Gate; Sources are pins 1–5 and 7–8 - all source leads tied internally to common source node

Key Features

Feature	Design Value
Ultra-low R_DS(on)/Q_g ratio	Enables >95% efficiency in 12 V → 1.2 V/20 A synchronous buck at 1 MHz
Fully characterized avalanche	Rated for 500 mJ single-pulse energy - eliminates need for external snubbers in inductive loads
Low gate-to-drain charge (Q_gd)	8.2 nC - suppresses false turn-on during high dv/dt commutation in half-bridge configurations
Lead-free and RoHS-compliant	Meets IPC-J-STD-609A Class 1 halogen-free requirements for consumer electronics

Applications

Server VRM Power Stage

Laptop CPU Core Regulator

Use Scenario: High-current, high-frequency point-of-load converter delivering 1.0–1.3 V at up to 30 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous high-side switch - handles full input current with minimal conduction loss and precise timing control.

Use Value: 8.5 mΩ R_DS(on) limits I²R loss to <1.3 W at 14 A, while 91 ns t_rr enables tight dead-time optimization to reduce body diode conduction.

Use Scenario: Compact dual-phase buck regulator powering mobile CPUs in thin-and-light notebooks with strict thermal envelope.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier - conducts return current with low forward drop and fast recovery to minimize reverse recovery loss.

Use Value: Body diode V_SD = 0.65 V at 125 °C and Q_rr = 140 nC reduce conduction and switching loss versus discrete Schottky solutions.

Telecom DC-DC Module

Industrial FPGA Power Supply

Use Scenario: 48 V input to 3.3 V/10 A isolated intermediate bus converter in telecom line cards.

IC Role / Device Role / Timing Role: Secondary-side synchronous MOSFET - replaces Schottky diode to improve efficiency and reduce heat sink size.

Use Value: 10 mΩ R_DS(on) at V_GS = 4.5 V ensures full logic-level drive compatibility with standard PWM controllers, eliminating gate driver ICs.

Use Scenario: Programmable logic supply requiring stable 1.2 V/8 A output with high transient response and long-term reliability.

IC Role / Device Role / Timing Role: Primary-side high-efficiency switch - operates in continuous conduction mode with low thermal resistance (R_θJA = 50 °C/W).

Use Value: 500 mJ E_AS rating withstands inrush and fault currents without failure, supporting industrial-grade system uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 6.5 mΩ @ 10 V (lower), Q_g = 32–48 nC (higher), same SO-8 package	Better conduction loss but higher gate drive demand - suited for lower-frequency, higher-current designs	Select when thermal budget allows higher Q_g and R_DS(on) reduction is prioritized over switching speed
Si7852DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 10 V, Q_g = 22 nC, thermally enhanced PowerPAK SO-8	Lower R_θJA (40 °C/W) due to copper-clip construction - better for sustained high-power operation	Prefer when board-level thermal management is constrained and junction temperature must stay <125 °C

Compared with IRF7477PBF, IRF7478PBF trades gate drive efficiency for lower conduction loss, while Si7852DP offers superior thermal performance in identical footprint - choice depends on whether switching frequency, thermal headroom, or conduction loss dominates the design constraint.

Availability

IRF7477PBF is available at Aetrix Electronics and suitable for server VRM power stages, laptop CPU core regulators, and telecom DC-DC modules requiring stable component supply, consistent parametric performance across production lots, and long-term industrial availability.

Supply support for IRF7477PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The IRF7477PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and robust avalanche capability are mandatory.

FAQ

Is IRF7477PBF suitable for 3.3 V gate drive?

Yes - its gate threshold voltage (V_GS(th) = 1.0–2.5 V) and R_DS(on) = 10 mΩ at V_GS = 4.5 V confirm reliable enhancement-mode operation with 3.3 V logic-level drivers. Full 14 A current capability requires ≥4.5 V gate bias per datasheet Fig. 13.

What is the maximum continuous drain current at 100 °C case temperature?

Per Fig. 9 and Absolute Maximum Ratings, continuous drain current drops to approximately 7.5 A at T_C = 100 °C due to linear derating (0.02 mW/°C) and thermal limits - actual usable current depends on PCB copper area and airflow, but 7–8 A is typical for conservative thermal design.

Does IRF7477PBF have integrated ESD protection on the gate?

No - the device lacks on-chip gate ESD protection diodes. External gate resistors (≥10 Ω) and TVS clamping are recommended in systems exposed to handling or system-level ESD per IEC 61000-4-2, especially given ±20 V V_GS absolute maximum rating.

Can IRF7477PBF replace IRF7470PBF in existing designs?

Yes - both are SO-8 N-channel MOSFETs with identical pinout and similar V_DS/I_D ratings, but IRF7477PBF offers 25% lower R_DS(on) (8.5 vs. 11.5 mΩ) and improved Q_g/Q_gd metrics. Layout and drive circuitry remain compatible; efficiency gains are measurable at >10 A loads.

IRF7477PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2710 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7477PBF FAQ

1.How can I place an order for IRF7477PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7477PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7477PBF reliable?

The price and inventory of IRF7477PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7477PBF is usually 5 days.

3.What payment methods are accepted for IRF7477PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7477PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7477PBF?

IRF7477PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7477PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7477PBF?

For technical support, including IRF7477PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7477PBF requirements.

6.How does Aetrix verify that IRF7477PBF is sourced from the original manufacturer or authorized distributors?

All IRF7477PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7477PBF meets industry standards.

7.What is the process for return or replacement of IRF7477PBF?

All IRF7477PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7477PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7477PBF part is unused and in its original packaging.

Return procedure for IRF7477PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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