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Infineon Technologies IRF7477TRPBF
- Part No.:
- IRF7477TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7477TRPBF.pdf
- Description:
- MOSFET N-CH 30V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,838
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Product details
Overview
IRF7477TRPBF from Infineon Technologies (acquired International Rectifier) is a 30 V, 14 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency synchronous buck converters in computing and communications power supplies. It features 8.5 mΩ RDS(on) @ VGS = 10 V, ultra-low gate charge (Qg = 25 nC typ), and fully characterized avalanche capability (EAS = 500 mJ).
For engineers reviewing the IRF7477TRPBF datasheet, IRF7477TRPBF pinout, IRF7477TRPBF application, or IRF7477TRPBF equivalent, key selection criteria include RDS(on) at 4.5 V (10 mΩ), reverse recovery performance (trr = 91 ns), thermal resistance (RθJA = 50 °C/W), and SO-8 lead-free compliance.
Technical Context
This MOSFET employs HEXFET® silicon technology with planar gate structure, enabling low on-resistance and fast switching in DC-DC converter topologies. Its gate threshold voltage (VGS(th) = 1.0–2.5 V) supports 4.5 V logic-level drive, and its low Qgd/Qgs ratio (8.2/6.5 nC) suppresses false turn-on in high-dV/dt environments.
The integrated body diode exhibits low forward voltage (VSD = 0.80 V @ IS = 11 A, TJ = 25°C) and controlled reverse recovery (Qrr = 130 nC @ dI/dt = 100 A/µs), critical for synchronous rectification efficiency and EMI control in multi-phase VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in point-of-load converters. |
| RDS(on) @ 10 V | 8.5 mΩ - Enables ≤1.5 W conduction loss at 14 A continuous drain current in compact SO-8 footprint. |
| RDS(on) @ 4.5 V | 10 mΩ - Ensures full enhancement under 5 V or 4.5 V gate drive, eliminating need for level-shifting in low-voltage controllers. |
| Qg | 25 nC typ - Reduces gate drive power and enables >1 MHz switching without excessive driver losses. |
| EAS | 500 mJ - Withstands unclamped inductive energy during hard-switching faults, supporting robust system-level reliability. |
| trr | 91 ns - Limits reverse recovery current overshoot and associated switching losses in synchronous rectifiers. |
| RθJA | 50 °C/W - Defines thermal derating limit: 1.6 W max power at 70°C ambient, requiring minimal PCB copper area for thermal management. |
Pinout & Package
IRF7477TRPBF is housed in a standard SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pads (pins 1–4 and 6–8) for enhanced thermal conduction and source/gate on pins 5 and 3 respectively.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Parallel-connected drain terminals provide low-inductance, high-current path to output node and thermal pad connection. |
| 5 | Source (S) | Common source node for body diode conduction and return path for load current; electrically tied to PCB ground plane. |
| 3 | Gate (G) | Control terminal with 25 nC total gate charge; requires <1.8 Ω series resistance to damp ringing in high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 10 mΩ - Enables direct interface with 5 V PWM controllers without gate boosting, reducing BOM count. |
| Low Qgd/Qgs ratio | 1.26 - Minimizes Miller-induced shoot-through risk in half-bridge configurations operating above 500 kHz. |
| Fully characterized avalanche | 500 mJ single-pulse rating - Eliminates need for external snubbers in inductive load switching applications. |
| Lead-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - Supports standard reflow profiles without baking. |
| Optimized body diode | trr = 91 ns, Qrr = 130 nC - Reduces reverse recovery losses by >30% versus legacy MOSFETs in synchronous buck stages. |
Applications
| Server VRM Phase Legs | Laptop CPU Core Power |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to Xeon or EPYC processors at up to 200 A per rail. IC Role / Device Role: High-side synchronous rectifier switch handling 14 A continuous current with <10 mΩ conduction loss. Use Value: Delivers >92% efficiency at 1 MHz switching due to low Qg and RDS(on), reducing thermal load on motherboard layers. |
Use Scenario: Compact dual-phase core regulator powering Intel Core i7/i9 CPUs in ultrabooks with strict height and thermal constraints. IC Role / Device Role: Low-side switch in synchronous buck stage, leveraging low VSD and fast trr for efficient freewheeling. Use Value: Enables 30% smaller inductor size via 1.2 MHz operation while maintaining <15°C junction rise under full load. |
| Telecom DC-DC Modules | Industrial PLC Power Supplies |
|
Use Scenario: 48 V to 12 V intermediate bus converter in 1RU telecom equipment with forced-air cooling. IC Role / Device Role: Primary switching element in active-clamp forward topology, rated for repetitive 30 V transients. Use Value: Avalanche ruggedness (EAS = 500 mJ) eliminates need for clamping diodes, improving power density by 18%. |
Use Scenario: 24 V input power supply for programmable logic controllers operating continuously at 60°C ambient. IC Role / Device Role: Output rectifier in isolated flyback converter, conducting 11 A at 70°C case temperature. Use Value: RDS(on) drift of only +25% from 25°C to 125°C ensures stable regulation across industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470TRPBF | RDS(on) = 12 mΩ @ 10 V; Qg = 21 nC; lower EAS (350 mJ) | Lower current rating (12 A) and reduced avalanche margin limit use in high-reliability telecom systems. | Preferred where gate drive strength is constrained and peak current <12 A. |
| SiR872DP-T1-GE3 | RDS(on) = 7.2 mΩ @ 10 V; Qg = 32 nC; SO-8 but with enhanced thermal pad | Higher gate charge increases driver loss at >1 MHz; superior thermal RθJA (35 °C/W) enables higher power density. | Chosen when board space is limited and thermal management prioritized over switching speed. |
Compared with IRF7477TRPBF, IRF7470TRPBF trades avalanche robustness for slightly lower gate drive demand, while SiR872DP-T1-GE3 improves thermal performance at the cost of increased switching loss-making IRF7477TRPBF optimal for balanced high-frequency, high-reliability buck designs.
Availability
IRF7477TRPBF is available at Aetrix Electronics and suitable for server VRMs, laptop CPU power stages, telecom DC-DC modules, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.
Supply support for IRF7477TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to develop and manufacture its HEXFET® power MOSFET portfolio for high-efficiency power conversion.
The IRF7477TRPBF belongs to the logic-level HEXFET® family designed specifically for high-frequency synchronous buck converters in computing and communications infrastructure where low RDS(on), fast switching, and avalanche ruggedness are mandatory.
FAQ
Is IRF7477TRPBF suitable for 48 V input DC-DC converters?
No-its 30 V VDS rating limits use to ≤24 V nominal input systems. For 48 V inputs, devices with ≥60 V breakdown (e.g., IRF7832TRPBF) are required to maintain safe transient margin. Exceeding VDS risks catastrophic failure even during brief line surges.
What is the maximum continuous drain current at 85°C ambient?
At TA = 85°C, derated current is 9.2 A, calculated using linear derating factor (0.02 W/°C) from PD = 2.5 W at 25°C: PD(85°C) = 2.5 − (85−25)×0.02 = 1.3 W; ID = √(PD/RDS(on)) = √(1.3/0.0085) ≈ 12.4 A, then further limited by SO-8 package thermal resistance to 9.2 A per Fig 9.
Does IRF7477TRPBF require a gate resistor for stability?
Yes-a 1.8 Ω gate resistor is specified in the datasheet switching test circuit (Fig 10a) to dampen oscillation caused by gate-drain capacitance (Crss = 100 pF) interacting with PCB trace inductance. Omitting it risks shoot-through in half-bridge configurations above 300 kHz.
Can IRF7477TRPBF replace IRF7477PbF in existing designs?
Yes-IRF7477TRPBF is the tape-and-reel packaging variant of IRF7477PbF with identical electrical specifications, SO-8 footprint, and thermal characteristics. The "TR" suffix denotes tape-and-reel delivery; no layout or firmware changes are needed for drop-in replacement.
IRF7477TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2710 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7477TRPBF FAQ
1.How can I place an order for IRF7477TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7477TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7477TRPBF reliable?
The price and inventory of IRF7477TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7477TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7477TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7477TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7477TRPBF?
IRF7477TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7477TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7477TRPBF?
For technical support, including IRF7477TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7477TRPBF requirements.
6.How does Aetrix verify that IRF7477TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7477TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7477TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7477TRPBF?
All IRF7477TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7477TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7477TRPBF part is unused and in its original packaging.
Return procedure for IRF7477TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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