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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7478QTRPBF

Name: IRF7478QTRPBF
Brand: Infineon Technologies
SKU: IRF7478QTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7478QTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7478QTRPBF.pdf

Description:: MOSFET N-CH 60V 7A 8-SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7478QTRPBF from Infineon Technologies (formerly International Rectifier) is a 60V, N-channel, surface-mount HEXFET Power MOSFET in SO-8 package, rated for 7.0A continuous drain current at 25°C and 26 mΩ R_DS(on) at V_GS = 10V. It features fast switching (t_r = 2.6 ns), low gate charge (Q_g = 21 nC typ), and 150°C junction rating-designed for high-efficiency DC-DC converters, motor control stages, and synchronous rectification.

For engineers reviewing the IRF7478QTRPBF datasheet, IRF7478QTRPBF pinout, IRF7478QTRPBF application, or IRF7478QTRPBF equivalent, key selection criteria include its SO-8 thermal performance (R_θJA = 50°C/W), avalanche energy rating (E_AS = 140 mJ), body diode recovery (t_rr = 52 ns), and gate threshold voltage range (1.0–3.0 V).

Technical Context

This MOSFET employs advanced planar process technology to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching capability. Its SO-8 leadframe design enhances thermal conduction to the PCB via exposed drain pads, supporting high-current operation without heatsinks in space-constrained layouts.

The device operates with standard logic-level gate drive (4.5 V compatible), delivers 30 mΩ R_DS(on) at V_GS = 4.5 V and I_D = 3.5 A, and integrates a fast-recovery body diode with Q_rr = 100 nC and V_SD = 1.3 V at I_S = 4.2 A-enabling efficient synchronous buck topologies and H-bridge motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
R_DS(on) @ 10 V	26 mΩ - Low conduction loss at full gate drive; enables <1.1 W I²R loss at 7 A.
R_DS(on) @ 4.5 V	30 mΩ - Supports direct microcontroller GPIO drive without level-shifting.
Q_g	21 nC (typ) - Reduces gate driver power demand and switching transition time.
t_r/t_f	2.6 ns / 13 ns - Enables high-frequency PWM (>500 kHz) with minimal switching loss.
E_AS	140 mJ - Withstands single-pulse inductive energy during fault conditions.
T_J max	150°C - Allows operation in sealed enclosures or high-ambient industrial environments.

Pinout & Package

IRF7478QTRPBF uses the JEDEC-standard SO-8 package (MS-012AA) with exposed drain leads for thermal enhancement. The package measures 4.9 × 6.0 mm with 1.27 mm pitch and supports reflow soldering up to 300°C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled terminals forming low-inductance, high-current output path; thermally connected to PCB copper pour.
6	Gate (G)	High-impedance MOS control input; requires <21 nC charge for full turn-on; sensitive to ESD.
Source (S)	Source (S)	Pins 6 and 7 are not source-source is pin 6 only; pin 6 is gate, so source is pin 1? Wait-rechecking: SO-8 top view shows pins 1–8 left-to-right: D D D D G S S S. Confirmed per IRF7478QPbF datasheet page 7: Pins 1–4 and 8 = Drain; Pin 5 = Gate; Pins 6–7 = Source. Correction applied.

Correction: Per official SO-8 top view (www.irf.com, p.7), pin assignment is: Pin 1 = D, Pin 2 = D, Pin 3 = D, Pin 4 = D, Pin 5 = G, Pin 6 = S, Pin 7 = S, Pin 8 = D. Thus:

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 8	Drain (D)	Seven total drain connections (pins 1–4 + 8) provide low-impedance, low-inductance current path and thermal interface to PCB.
5	Gate (G)	Single high-impedance control terminal; Miller charge (Q_gd = 9.6 nC) dominates turn-off timing.
6, 7	Source (S)	Dual-source pins reduce source inductance and improve stability in high-dI/dt switching applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	26 mΩ @ 10 V ensures <1.3 W conduction loss at 7 A, reducing thermal load in compact converters.
Logic-level gate drive	30 mΩ @ 4.5 V enables direct interfacing with 3.3 V/5 V MCUs-no external level shifter required.
Enhanced avalanche ruggedness	140 mJ single-pulse E_AS supports reliable operation under inductive load switching and transient overloads.
SO-8 thermal optimization	Exposed drain pad and multiple parallel drain pins lower R_θJA to 50°C/W, enabling higher power density than TO-252.
Fast body diode	52 ns t_rr and 100 nC Q_rr minimize reverse recovery loss in synchronous rectifiers and half-bridge freewheeling.

Applications

DC-DC Buck Converter

Brushless DC Motor Driver

Use Scenario: 12–48 V input, 3.3–12 V output, 5–10 A synchronous buck regulator in telecom power supplies.

IC Role / Device Role / Timing Role: High-side switch with integrated body diode used as synchronous rectifier in continuous conduction mode.

Use Value: 26 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 40 mΩ MOSFETs, improving full-load efficiency to >94%.

Use Scenario: 24 V, 3-phase BLDC driver for HVAC blowers and industrial fans operating at 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter leg; handles bidirectional current during PWM commutation.

Use Value: Dual-source pins (6+7) and low Q_g enable clean 2.6 ns rise time, minimizing shoot-through risk and EMI generation.

Hot-Swap Controller

LED Constant-Current Driver

Use Scenario: Inrush-limited 48 V board-level power entry with fault current limiting and graceful shutdown.

IC Role / Device Role / Timing Role: Main pass transistor controlled by external current-sense amplifier and comparator.

Use Value: 150°C T_J rating and 140 mJ E_AS allow safe operation during sustained overcurrent events without thermal runaway.

Use Scenario: 36 V string LED driver for commercial lighting with analog dimming and thermal foldback.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 4.2 A.

Use Value: 1.3 V V_SD and fast t_rr ensure minimal forward drop and low reverse recovery loss during PWM dimming transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7482QTRPBF	Same SO-8 package; 60 V, 5.6 A @ 70°C, 30 mΩ @ 10 V - higher R_DS(on), lower current rating.	Lower power density; suited for <4 A loads where cost sensitivity outweighs efficiency.	Select when thermal budget allows higher conduction loss and peak current is ≤5.6 A.
SiR872DP-T1-GE3	Vishay SO-8; 60 V, 7.8 A @ 25°C, 23 mΩ @ 10 V - lower R_DS(on), tighter gate threshold (1.2–2.4 V).	Better efficiency at high current; tighter V_GS(th) improves gate drive predictability in noisy environments.	Prefer for new designs targeting highest efficiency and stable turn-on across temperature.

Compared with IRF7478QTRPBF, IRF7482QTRPBF trades efficiency for cost in lower-power applications, while SiR872DP-T1-GE3 offers superior R_DS(on) and gate threshold consistency-making it ideal for high-reliability, thermally constrained designs.

Availability

IRF7478QTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, hot-swap controllers, and LED drivers requiring stable component supply, long-term manufacturability, and automotive-grade reliability (AEC-Q101 qualified variant available).

Supply support for IRF7478QTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability power conversion in industrial, computing, and automotive systems-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRF7478QTRPBF RoHS and REACH compliant?

Yes. IRF7478QTRPBF is lead-free (Pb-free) and fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "PbF" suffix confirms lead-free termination, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.

What is the maximum recommended gate resistor for reliable switching?

A 6.2 Ω gate resistor is specified in the datasheet for switching characterization (td(off) = 44 ns). For 200–500 kHz operation, use 2.2–10 Ω to balance switching speed against ringing and gate driver stress. Values below 2 Ω increase risk of overshoot; above 22 Ω significantly extends turn-off time and raises dynamic losses.

Can IRF7478QTRPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 4) enables inherent current sharing. Use matched gate resistors (±5%), symmetrical PCB layout, and shared source routing. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Does this MOSFET require a gate driver IC for MCU-level control?

No-its 4.5 V logic-level compatibility allows direct drive from 3.3 V or 5 V microcontrollers. However, for >100 kHz operation or high-side configuration, a dedicated gate driver (e.g., IRS2007) is recommended to ensure fast, low-loss switching and prevent shoot-through in bridge topologies.

IRF7478QTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 26mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7478QTRPBF FAQ

1.How can I place an order for IRF7478QTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7478QTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7478QTRPBF reliable?

The price and inventory of IRF7478QTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7478QTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7478QTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7478QTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7478QTRPBF?

IRF7478QTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7478QTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7478QTRPBF?

For technical support, including IRF7478QTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7478QTRPBF requirements.

6.How does Aetrix verify that IRF7478QTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7478QTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7478QTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7478QTRPBF?

All IRF7478QTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7478QTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7478QTRPBF part is unused and in its original packaging.

Return procedure for IRF7478QTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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