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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7478TRPBF

Name: IRF7478TRPBF
Brand: Infineon Technologies
SKU: IRF7478TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7478TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7478TRPBF.pdf

Description:: MOSFET N-CH 60V 7A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7478TRPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 7.0 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 26 mΩ R_DS(on) at V_GS = 10 V, 30 mΩ at 4.5 V, and low gate charge (Q_g = 21–31 nC), enabling efficient synchronous rectification in compact power supplies.

For engineers reviewing the IRF7478TRPBF datasheet, IRF7478TRPBF pinout, IRF7478TRPBF application, or IRF7478TRPBF equivalent, key selection criteria include its 60 V V_DSS, 26 mΩ on-resistance at 10 V drive, SO-8 thermal performance (R_θJA = 50 °C/W), avalanche-rated operation (E_AS = 140 mJ), and lead-free compliance per JEDEC MS-012AA.

Technical Context

This MOSFET employs planar HEXFET® technology with fully characterized output capacitance (C_oss = 300 pF at V_DS = 25 V; C_oss,eff = 410 pF), enabling accurate snubberless flyback and resonant converter design. Its low Q_gd/Q_g ratio (9.6/21 nC) supports fast, controllable switching with reduced Miller-induced shoot-through risk.

The device integrates a robust body diode with t_rr = 52–78 ns and Q_rr = 100–150 nC at dI/dt = 100 A/µs, suitable for synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI. Junction temperature range spans −55 °C to +150 °C, validated under unclamped inductive switching (IAS = 4.2 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source voltage before breakdown, supporting 48 V input bus designs with margin.
R_DS(on) @ 10 V	26 mΩ - Enables ≤0.5 W conduction loss at 4.2 A continuous current in compact SO-8 footprint.
Q_g	21–31 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in LLC or buck converters.
C_oss,eff	410 pF - Effective output capacitance simplifies soft-switching timing calculations for zero-voltage switching (ZVS) design.
E_AS	140 mJ - Single-pulse avalanche energy rating allows safe operation during transient overvoltage events without external clamping.
t_r/t_f	2.6 ns / 13 ns - Fast rise/fall times minimize switching losses and support high-efficiency, high-density power stages.
R_θJA	50 °C/W - Thermal resistance enables 2.5 W dissipation at 25 °C ambient when mounted on standard PCB, critical for thermally constrained layouts.

Pinout & Package

IRF7478TRPBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm pitch and supports reflow soldering up to 300 °C for 10 seconds.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel internal drain connections - collectively handle full 7.0 A continuous current and provide low-inductance path to ground plane.
6	Gate (G)	Control terminal - accepts 0–20 V logic-level drive; low input capacitance (C_iss = 1740 pF) minimizes driver loading.
Source (S)	Source (S)	Pins 6 and 7 are source terminals - dual-source configuration lowers source inductance and improves gate control stability during hard switching.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	30 mΩ - Ensures stable on-state performance with 3.3 V or 5 V gate drivers, eliminating need for level-shifting in low-voltage control circuits.
Fully characterized C_oss	300 pF @ 25 V, 220 pF @ 48 V - Enables precise resonant tank modeling and ZVS boundary prediction across full operating voltage range.
Avalanche-rated	E_AS = 140 mJ - Eliminates requirement for external RCD snubbers in flyback or forward converters subjected to leakage inductance spikes.
Lead-free and RoHS-compliant	Pb-free plating per JEDEC J-STD-020 - Meets global environmental compliance requirements without derating or process change for assembly lines.
Body diode t_rr	52–78 ns - Predictable reverse recovery supports synchronous rectifier timing in buck-derived topologies with minimal shoot-through risk.

Applications

Server VRM

USB-C PD Adapter

Use Scenario: 48 V input to 12 V/5 V point-of-load conversion in rack-mounted servers with strict efficiency and thermal constraints.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, switching at 500 kHz–1 MHz with tight dead-time control.

Use Value: 26 mΩ R_DS(on) and low Q_g reduce conduction and switching losses by ≥12% versus legacy 40 mΩ SO-8 MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Secondary-side synchronous rectification in 65 W USB-C Power Delivery adapters with 20 V output.

IC Role / Device Role / Timing Role: Low-side switch in active clamp flyback, driven by dedicated SR controller with adaptive timing.

Use Value: 30 mΩ R_DS(on) at 4.5 V ensures reliable turn-on with 5 V gate drive, while C_oss,eff = 410 pF enables clean ZVS transition at 100–200 kHz.

Industrial PLC I/O Module

Automotive ADAS Camera Power

Use Scenario: 24 V input DC-DC supply powering isolated analog sensor interfaces and digital I/O in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side switch in buck regulator feeding isolated DC-DC converters, requiring robust avalanche capability.

Use Value: 140 mJ E_AS withstands inductive kickback from solenoid loads without failure, extending field reliability beyond 10 years.

Use Scenario: Compact 12 V to 3.3 V/1.8 V power rail generation for CMOS image sensors and ISP SoCs in automotive surround-view cameras.

IC Role / Device Role / Timing Role: Primary-side switch in high-frequency buck converter operating in automotive temperature range (−40 °C to +125 °C).

Use Value: R_DS(on) variation <2.5× from −40 °C to +150 °C ensures stable regulation across junction temperature swing, reducing output ripple by 18%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 22 mΩ @ 10 V; Q_g = 25 nC; SO-8; V_DSS = 60 V	Lower on-resistance but higher gate charge - better for low-frequency, high-current apps; less optimal for >500 kHz switching.	Select when conduction loss dominates and switching frequency is ≤300 kHz.
DMN6070LSD-13	R_DS(on) = 28 mΩ @ 10 V; Q_g = 18 nC; SO-8; V_DSS = 60 V	Lower Q_g improves high-frequency efficiency but higher R_DS(on) increases conduction loss above 3 A.	Select when switching loss dominates and load current is typically <3.5 A.

Compared with Si7852DP-T1-GE3 and DMN6070LSD-13, IRF7478TRPBF offers balanced trade-off between R_DS(on) and Q_g, making it optimal for mid-power, high-frequency DC-DC converters where both conduction and switching losses must be minimized simultaneously.

Availability

IRF7478TRPBF is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC I/O modules, and automotive ADAS camera power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF7478TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF7478TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained consumer, computing, and industrial power supplies.

FAQ

What is the maximum continuous drain current for IRF7478TRPBF at 70°C ambient?

The maximum continuous drain current is 5.6 A at T_A = 70°C with V_GS = 10 V, derated from 7.0 A at 25°C using the linear derating factor of 0.02 W/°C and R_θJA = 50 °C/W. This value assumes SO-8 mounting on standard FR-4 PCB with 1 inch² copper area.

Does IRF7478TRPBF support logic-level gate drive?

Yes - it delivers 3.5 A drain current with R_DS(on) = 30 mΩ at V_GS = 4.5 V, enabling direct drive from 3.3 V or 5 V microcontrollers and PWM controllers without gate drivers. Gate threshold voltage is specified 1.0–3.0 V, ensuring reliable turn-on at 4.5 V.

What is the significance of C_oss,eff = 410 pF in design?

C_oss,eff represents the fixed capacitance that replicates the actual energy stored in C_oss during V_DS ramp from 0 to 48 V. It is used to calculate ZVS timing in resonant converters and ensures accurate prediction of dead-time requirements without iterative simulation.

Is IRF7478TRPBF qualified for automotive applications?

No - per the original datasheet, this part is designed and qualified for the Consumer market only. It does not meet AEC-Q101 stress test requirements or automotive temperature grade (−40 °C to +125 °C junction) validation. For automotive use, Infineon recommends AUIRF7478 or equivalent AEC-Q101 qualified variants.

IRF7478TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7478TRPBF FAQ

1.How can I place an order for IRF7478TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7478TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7478TRPBF reliable?

The price and inventory of IRF7478TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7478TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7478TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7478TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7478TRPBF?

IRF7478TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7478TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7478TRPBF?

For technical support, including IRF7478TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7478TRPBF requirements.

6.How does Aetrix verify that IRF7478TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7478TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7478TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7478TRPBF?

All IRF7478TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7478TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7478TRPBF part is unused and in its original packaging.

Return procedure for IRF7478TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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