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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7478TRPBF-1

Name: IRF7478TRPBF-1
Brand: Infineon Technologies
SKU: IRF7478TRPBF-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7478TRPBF-1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7478TRPBF-1.pdf

Description:: MOSFET N-CH 60V 7A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7478TRPBF-1 from Infineon Technologies (formerly International Rectifier) is a 60 V, 7.0 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It delivers R_DS(on) = 26 mΩ @ V_GS = 10 V, Q_g = 21 nC, and features integrated body diode with t_rr = 52 ns - enabling efficient synchronous rectification in buck converters up to 1 MHz.

For engineers reviewing the IRF7478TRPBF-1 datasheet, IRF7478TRPBF-1 pinout, IRF7478TRPBF-1 application, or IRF7478TRPBF-1 equivalent, key selection criteria include its low gate charge for fast switching, SO-8 industrial qualification (MSL1), RoHS/halogen-free compliance, and validated avalanche energy rating (E_AS = 140 mJ) under unclamped inductive load conditions.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted channel design to balance conduction loss and switching speed. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) supports 4.5 V logic-level drive, while R_DS(on) increases only 2.5× from 25°C to 150°C per Fig 4 - ensuring stable performance across industrial temperature range.

The device integrates a robust body diode characterized by V_SD = 1.3 V @ I_S = 4.2 A and Q_rr = 100–150 nC, enabling reliable freewheeling in hard-switched topologies. C_oss(eff) = 410 pF at V_DS = 0–48 V confirms low output capacitance for reduced turn-off loss in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Withstands input voltage up to 48 V DC-DC systems with 25% margin for transients
R_DS(on) @ V_GS = 10 V	26 mΩ - Delivers ≤ 1.27 W conduction loss at 7.0 A continuous drain current
Q_g	21 nC - Enables <100 ns total switching time with 6.2 Ω gate resistor at 10 V drive
t_r/t_f	2.6 ns / 13 ns - Supports >1 MHz switching without excessive EMI or shoot-through risk
E_AS	140 mJ - Sustains single-pulse avalanche stress during overcurrent events in non-current-limited SMPS
T_J Range	−55°C to +150°C - Qualified for industrial ambient operation up to +85°C with derated power
C_oss(eff)	410 pF - Minimizes capacitive turn-off loss and improves light-load efficiency in resonant designs

Pinout & Package

IRF7478TRPBF-1 is housed in an industry-standard SO-8 surface-mount package (JEDEC MS-012AA), measuring 4.9 × 6.0 × 1.27 mm, with MSL1 moisture sensitivity rating and lead-free/halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Five parallel internal drain connections - low-inductance path for high-current output stage
6	Gate (G)	Single gate input with 21 nC total charge - requires low-impedance driver for <100 ns switching
7, 8	Source (S)	Dual-source terminals reduce source inductance and improve gate control stability in high-di/dt operation

Key Features

Feature	Design Value
SO-8 footprint compatibility	Enables drop-in replacement across multi-vendor designs without PCB rework
Low Q_gd/Q_g ratio (9.6/21 nC)	Reduces Miller effect, improving noise immunity and enabling stable 4.5 V gate drive
Body diode t_rr = 52 ns (typ)	Minimizes reverse recovery loss in synchronous buck converters operating above 300 kHz
R_DS(on) tempco ≤ 0.065 V/°C	Ensures predictable thermal runaway margin in paralleled configurations
Industrial qualification (JESD47F)	Validated for 1000-cycle temperature cycling and 1000-hour HTOL at 150°C junction

Applications

Server VRM

Telecom DC-DC

Use Scenario: 12 V input to 1.2 V/100 A output point-of-load converter in dual-phase interleaved buck topology.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with 500 kHz switching frequency and 150 ns dead-time control.

Use Value: 26 mΩ R_DS(on) limits conduction loss to <1.3 W per phase; low Q_g enables precise gate timing alignment across phases.

Use Scenario: 48 V to 5 V/20 A isolated forward converter secondary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal with 100 ns propagation delay.

Use Value: Body diode V_SD = 1.3 V ensures safe freewheeling during gate drive dropout; 140 mJ E_AS withstands output short-circuit stress.

Industrial PLC PSU

Automotive ADAS Camera Module

Use Scenario: 24 V to 3.3 V/3 A non-isolated buck converter powering FPGA I/O banks in programmable logic controller.

IC Role / Device Role / Timing Role: Main power switch with external PWM controller and current-mode feedback loop.

Use Value: −55°C to +150°C T_J rating supports operation in sealed enclosures; SO-8 MSL1 allows standard reflow without baking.

Use Scenario: 12 V to 1.8 V/1.5 A buck converter supplying image sensor core voltage in automotive rear-view camera module.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 2 MHz to minimize EMI near RF receivers.

Use Value: C_oss(eff) = 410 pF reduces switching node ringing; 2.6 ns rise time meets CISPR-25 Class 5 conducted emission limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 23 mΩ @ 10 V; Q_g = 25 nC; SO-8 package	Higher gate charge increases driver loss; lower R_DS(on) improves conduction efficiency at >5 A	Prefer when conduction loss dominates system efficiency and gate drive capability permits higher Q_g
IPB80N06S4-02	TO-263 package; R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 82 nC	Not pin-compatible; requires PCB redesign; superior thermal resistance (R_θJA = 30°C/W)	Select only when board space allows TO-263 and thermal budget demands sub-3 mΩ conduction loss

Compared with SiR872DP-T1-GE3 and IPB80N06S4-02, IRF7478TRPBF-1 offers optimal trade-off between gate drive simplicity (low Q_g), SO-8 manufacturability, and industrial reliability - making it preferred for cost-sensitive, high-volume 48 V/12 V DC-DC modules where layout density and assembly yield are critical.

Availability

IRF7478TRPBF-1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply, JEDEC-qualified packaging, and long-term lifecycle support.

Supply support for IRF7478TRPBF-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, and connectivity solutions for industrial, automotive, and energy-efficient applications.

This device belongs to Infineon's OptiMOS™-T2 family of low-voltage power MOSFETs, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space-constrained and thermally demanding environments.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7478TRPBF-1 supports 5.6 A continuous drain current at T_A = 70°C with V_GS = 10 V, based on its 2.5 W power dissipation rating and 50°C/W junction-to-ambient thermal resistance. Derating follows linear factor of 0.02 W/°C above 25°C ambient.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 6.2 Ω) is required to dampen parasitic oscillation and control dV/dt during switching. The device's Q_gd = 9.6 nC and C_iss = 1740 pF make it susceptible to ringing without proper gate network design, especially in high-di/dt synchronous rectifier layouts.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - the integrated body diode has t_rr = 52 ns (typ) and Q_rr = 100 nC, verified under I_F = 4.2 A and di/dt = 100 A/μs. It is qualified for use in hard-switched buck and forward converters up to 500 kHz, but not recommended for ZVS or LLC resonant operation without external Schottky clamping.

What is the peak diode recovery dv/dt rating?

The peak diode recovery dv/dt rating is 3.7 V/ns, measured under unclamped inductive switching conditions. This value reflects the device's ability to withstand rapid voltage transients during body diode commutation without latch-up or secondary breakdown.

IRF7478TRPBF-1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7478TRPBF-1 FAQ

1.How can I place an order for IRF7478TRPBF-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7478TRPBF-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7478TRPBF-1 reliable?

The price and inventory of IRF7478TRPBF-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7478TRPBF-1 is usually 5 days.

3.What payment methods are accepted for IRF7478TRPBF-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7478TRPBF-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7478TRPBF-1?

IRF7478TRPBF-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7478TRPBF-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7478TRPBF-1?

For technical support, including IRF7478TRPBF-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7478TRPBF-1 requirements.

6.How does Aetrix verify that IRF7478TRPBF-1 is sourced from the original manufacturer or authorized distributors?

All IRF7478TRPBF-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7478TRPBF-1 meets industry standards.

7.What is the process for return or replacement of IRF7478TRPBF-1?

All IRF7478TRPBF-1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7478TRPBF-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7478TRPBF-1 part is unused and in its original packaging.

Return procedure for IRF7478TRPBF-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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