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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7484PBF

Name: IRF7484PBF
Brand: Infineon Technologies
SKU: IRF7484PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7484PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7484PBF.pdf

Description:: MOSFET N-CH 40V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,687

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Product details

Overview

IRF7484PBF from Infineon Technologies is a 40V, 14A N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, featuring 10 mΩ R_DS(on) at V_GS = 7.0 V, 150°C maximum junction temperature, and 230 mJ single-pulse avalanche energy - optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7484PBF datasheet, IRF7484PBF pinout, IRF7484PBF application, or IRF7484PBF equivalent, key selection criteria include its low on-resistance per silicon area, fast switching (t_d(off) = 180 ns), repetitive avalanche capability, and SO-8 thermal performance (R_θJA = 50°C/W).

Technical Context

This MOSFET employs Infineon's Stripe Planar HEXFET process to minimize conduction loss while maintaining robust gate control. Its 1.0–2.0 V gate threshold voltage enables reliable turn-on with standard 3.3 V or 5 V logic drivers, and its 69–100 nC total gate charge supports efficient high-frequency PWM operation up to several hundred kHz.

The integrated body diode exhibits 1.3 V forward voltage at 2.3 A and 59–89 ns reverse recovery time, enabling synchronous rectification in buck converters without external Schottky diodes. Repetitive avalanche operation is validated up to T_Jmax = 150°C under defined inductive load conditions (L = 2.3 mH, I_AS = 14 A, R_G = 25 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Withstands up to 40 V drain-source voltage before breakdown, suitable for 24 V industrial bus and 36 V battery systems.
R_DS(on) max	10 mΩ @ V_GS = 7.0 V, I_D = 14 A - Enables ≤1.96 W conduction loss at full rated current, reducing heatsink requirements.
I_D continuous	14 A @ T_A = 25°C - Supports sustained 14 A load current on standard 1-in² copper PCB without forced air.
E_AS	230 mJ - Absorbs inductive energy during unclamped switching events, enhancing system reliability in motor drives.
Q_g	69–100 nC - Determines gate driver power requirement; compatible with common low-side drivers like IR2104 or UCC27531.
t_r/t_f	5.0 ns / 58 ns - Fast edge rates reduce switching transition losses, critical for >200 kHz SMPS designs.
R_θJA	50°C/W - Junction-to-ambient thermal resistance on FR-4 with 1-in² copper, defining safe operating area at ambient temperatures ≤70°C.

Pinout & Package

IRF7484PBF is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal dissipation. The package complies with JEDEC MS-012AC and RoHS/lead-free standards.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Seven parallel drain terminals connected to internal die and exposed thermal pad - primary current path and heat sink interface.
6	Gate (G)	Control terminal; requires <±8 V rating and ~70 nC charge to fully enhance channel; sensitive to ESD.
S (pins 1–5 bottom layer)	Source (S)	Common return node for load current and gate drive reference; tied to PCB ground plane for low-inductance layout.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	10 mΩ at 7 V gate drive - reduces I²R losses by >30% vs. legacy 40 V MOSFETs in same package.
Repetitive avalanche rated	Validated up to T_J = 150°C - eliminates need for external snubbers in inductive switching applications.
Fast body diode	t_rr = 59–89 ns, Q_rr = 110–170 nC - minimizes reverse recovery loss in synchronous rectifiers and H-bridge freewheeling.
High-temperature operation	Rated for continuous operation at 150°C junction - supports sealed enclosures and high-ambient industrial environments.

Applications

Brushless DC Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 3-phase BLDC motors in HVAC blowers and pump controllers using 6-MOSFET inverter topology.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; handles 14 A peak phase current with <50 ns dead-time margin.

Use Value: 10 mΩ R_DS(on) limits conduction loss to <2 W per device, enabling fan-cooled motor drives up to 500 W.

Use Scenario: Synchronous rectifier in isolated 24 V input → 5 V/12 V output flyback or forward converter.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Body diode V_SD = 1.3 V and fast t_rr cut rectifier loss by 40% vs. 40 V Schottky, improving efficiency from 87% to 91%.

Automotive Body Control Modules

LED Driver Power Stages

Use Scenario: Load switching for solenoids, relays, and window lift actuators in 12 V/24 V vehicle platforms.

IC Role / Device Role / Timing Role: High-current, high-reliability load switch with integrated avalanche protection.

Use Value: 230 mJ E_AS safely clamps inductive kickback from 100 mH solenoids, eliminating external TVS diodes.

Use Scenario: Constant-current switching stage in high-brightness LED streetlight drivers (30–100 W).

IC Role / Device Role / Timing Role: Primary PWM switch controlling LED string current via buck regulator topology.

Use Value: Low Q_g (69–100 nC) and fast t_f (58 ns) enable clean 500 kHz switching, minimizing EMI and inductor size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7478PBF	R_DS(on) = 12 mΩ @ 7 V; lower Q_g (55 nC); same SO-8 package	Slightly higher conduction loss but faster switching; better for >1 MHz resonant converters	Select when gate drive strength is limited and switching frequency exceeds 1 MHz.
Si7852DP-T1-GE3	R_DS(on) = 9.5 mΩ @ 10 V; requires 10 V gate drive; different pinout (drain/source swapped)	Lower on-resistance but non-drop-in due to pin mismatch; needs PCB redesign	Choose only if board revision allows layout change and 10 V gate drive is available.

Compared with IRF7478PBF and Si7852DP-T1-GE3, IRF7484PBF offers the best balance of low R_DS(on), moderate gate charge, and true SO-8 pin compatibility - making it optimal for cost-sensitive, high-volume 24 V motor and power supply designs where layout reuse is critical.

Availability

IRF7484PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRF7484PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line delivers high-efficiency, rugged switching solutions for motor control, power conversion, and load management in harsh industrial and automotive environments.

FAQ

What is the maximum gate-to-source voltage rating for IRF7484PBF?

The absolute maximum V_GS rating is ±8.0 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –5 V to +7.0 V for reliable enhancement and safe turn-off. Gate drive circuits must include clamping (e.g., Zener diodes) when using bootstrap or transformer-isolated drivers with voltage overshoot risk.

Can IRF7484PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig. 4) ensures current sharing stability across multiple devices. For parallel use, match gate resistors (≤1 Ω difference), minimize source inductance imbalance, and ensure symmetrical PCB layout and thermal coupling to avoid thermal runaway at >10 A per device.

Does IRF7484PBF have built-in ESD protection?

No - it lacks integrated ESD protection circuitry. The gate oxide is highly sensitive; handling requires Class 0 ESD precautions. PCB layout must include gate series resistor (10–100 Ω) and optional 12 V Zener clamp to GND to prevent static-induced failure during assembly or field operation.

What is the recommended PCB footprint for thermal performance?

Use the SO-8 footprint per Infineon's AN-1040 guidelines: 12 mm² exposed drain pad with ≥4 thermal vias (0.3 mm diameter, filled) connecting to inner-layer ground planes. Minimum 1-in² (6.45 cm²) 2-oz copper pour beneath the package is required to achieve the specified R_θJA = 50°C/W rating.

IRF7484PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 7V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 14A, 7V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 7 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 3520 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7484PBF FAQ

1.How can I place an order for IRF7484PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7484PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7484PBF reliable?

The price and inventory of IRF7484PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7484PBF is usually 5 days.

3.What payment methods are accepted for IRF7484PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7484PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7484PBF?

IRF7484PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7484PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7484PBF?

For technical support, including IRF7484PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7484PBF requirements.

6.How does Aetrix verify that IRF7484PBF is sourced from the original manufacturer or authorized distributors?

All IRF7484PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7484PBF meets industry standards.

7.What is the process for return or replacement of IRF7484PBF?

All IRF7484PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7484PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7484PBF part is unused and in its original packaging.

Return procedure for IRF7484PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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