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Infineon Technologies IRF7484TRPBF
- Part No.:
- IRF7484TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7484TRPBF.pdf
- Description:
- MOSFET N-CH 40V 14A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,207
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Product details
Overview
IRF7484TRPBF from Infineon Technologies is a 40V, 14A N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, featuring 10 mΩ RDS(on) at VGS = 7.0 V, 150°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF7484TRPBF datasheet, IRF7484TRPBF pinout, IRF7484TRPBF application, or IRF7484TRPBF equivalent, key selection criteria include its ultra-low on-resistance, fast switching (td(off) = 180 ns), body diode recovery performance (trr = 59–89 ns), and SO-8 thermal capability (RθJA = 50 °C/W).
Technical Context
This MOSFET employs Infineon's stripe planar HEXFET process to minimize conduction loss per unit silicon area while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (1.0–2.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, and its 69–100 nC total gate charge supports efficient high-frequency PWM control up to several hundred kHz.
The integrated body diode exhibits 1.3 V forward voltage at 2.3 A and 25°C, with reverse recovery charge (Qrr) of 110–170 nC under di/dt = 100 A/µs - critical for minimizing commutation loss in synchronous buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V industrial bus and 12 V automotive auxiliary circuits. |
| RDS(on) max | 10 mΩ @ VGS = 7.0 V, ID = 14 A - Enables ≤1.96 W conduction loss at full current, reducing heatsink requirements in space-constrained designs. |
| ID continuous | 14 A @ TA = 25°C - Supports high-current load switching without derating when mounted on 1 in² copper PCB. |
| EAS | 230 mJ - Single-pulse avalanche energy rating ensures survivability during inductive turn-off transients in motor drive and solenoid control. |
| trr | 59–89 ns - Fast body diode recovery minimizes shoot-through risk and power loss during synchronous rectification. |
| Qg | 69–100 nC - Gate drive energy requirement determines driver strength needed for <200 ns switching transitions at 500 kHz. |
Pinout & Package
IRF7484TRPBF is housed in a surface-mount SO-8 package with exposed drain pad for enhanced thermal dissipation. The package footprint conforms to JEDEC MS-012AC and supports standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel internal drain connections tied to exposed pad - primary current path and thermal conduction path to PCB copper. |
| 8 | Gate (G) | Control terminal requiring <100 nC charge to fully enhance; sensitive to ESD (±8 V absolute max gate voltage). |
| Source (S) | Source (S) | Terminals 1–3 are internally connected to source; provides return path for load current and reference for gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 10 mΩ at 7 V drive - reduces I²R losses by >30% vs. legacy 20 mΩ SO-8 MOSFETs at same current. |
| Repetitive avalanche rating | Rated for repeated unclamped inductive switching up to TJmax = 150°C - eliminates need for external snubbers in brushed DC motor drives. |
| Fast body diode | trr = 59 ns (typ.), Qrr = 110 nC - enables clean zero-voltage switching in synchronous buck converters operating above 300 kHz. |
| Lead-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - supports standard SMT assembly without baking or special handling. |
Applications
| Industrial Motor Drive | Synchronous Buck Converter |
|---|---|
Use Scenario: Driving 24 V brushed DC motors in factory automation actuators with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling motor current direction and speed via duty-cycle modulation. Use Value: 10 mΩ RDS(on) limits conduction loss to <2 W at 14 A, enabling fanless enclosure design and extending brush life through reduced thermal stress. | Use Scenario: High-efficiency 12 V input to 3.3 V/10 A output DC-DC converter for FPGA core power. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to recover energy during low-side conduction phase. Use Value: Body diode trr < 90 ns and Qrr < 170 nC prevent cross-conduction, improving efficiency by 2.1% at 500 kHz compared to diode-based solution. |
| LED Driver Circuit | Power Supply OR-ing |
Use Scenario: Constant-current dimming of high-brightness LED strings in architectural lighting systems. IC Role / Device Role / Timing Role: PWM-controlled current sink switching LED string to ground at 1–10 kHz. Use Value: 150°C TJmax and 2.5 W PD allow sustained 14 A pulsed operation without thermal shutdown in enclosed fixtures. | Use Scenario: Redundant 12 V power rail combining from dual AC/DC supplies in telecom shelf systems. IC Role / Device Role / Timing Role: Ideal diode controller replacement using MOSFET as low-loss forward conduction path. Use Value: 10 mΩ on-resistance yields <150 mV forward drop at 15 A, cutting power loss by 85% versus 0.4 V Schottky diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 28 mΩ @ 4.5 V; lower VGS(th) (0.7–1.4 V); SO-8 but no exposed drain pad. | Better suited for 3.3 V logic drive; higher conduction loss limits use to ≤6 A continuous loads. | Select when gate drive voltage is constrained to ≤4.5 V and peak current < 8 A. |
| Si7852DP-T1-GE3 | RDS(on) = 8.5 mΩ @ 10 V; higher Qg (110 nC); thermally enhanced PowerPAK® SO-8. | Superior thermal resistance (RθJA = 40 °C/W) but requires 10 V gate drive for full spec compliance. | Select when board layout allows larger thermal pad and gate driver supports ≥10 V swing. |
Compared with IRLML6344TRPBF, IRF7484TRPBF delivers 2.8× lower RDS(on) at 7 V drive and supports repetitive avalanche - critical for motor inductive kickback. Versus Si7852DP-T1-GE3, it trades 1.5 mΩ lower on-resistance for 31% less gate charge, enabling faster switching with weaker drivers.
Availability
IRF7484TRPBF is available at Aetrix Electronics and suitable for industrial motor drive, synchronous buck converter, and LED driver applications requiring stable component supply and long-term manufacturing continuity.
Supply support for IRF7484TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The HEXFET® Power MOSFET product line targets high-efficiency power conversion and robust switching in harsh environments, emphasizing low RDS(on), avalanche ruggedness, and thermal reliability for industrial and transportation systems.
FAQ
Is IRF7484TRPBF suitable for 3.3 V logic-level gate drive?
No - its gate threshold voltage (1.0–2.0 V) allows turn-on at 3.3 V, but RDS(on) is specified only at VGS = 7.0 V. At 3.3 V, RDS(on) rises to ~35 mΩ, increasing conduction loss significantly. A dedicated logic-level MOSFET like IRLML6344TRPBF is recommended for true 3.3 V drive.
What is the maximum allowable case temperature for continuous operation?
The maximum case temperature is not directly specified; instead, thermal limits are defined by junction temperature. With RθJA = 50 °C/W and TJmax = 150°C, the device supports continuous 14 A operation only when ambient temperature remains ≤25°C on a 1 in² Cu board. Derating to 11 A is required at 70°C ambient.
Does IRF7484TRPBF include an integrated ESD protection diode?
No - the device lacks on-chip gate protection diodes. Its absolute maximum gate-to-source voltage is ±8.0 V. External Zener clamping (e.g., 6.8 V TVS) is required in systems exposed to ESD or gate ringing to prevent oxide damage during handling or operation.
Can IRF7484TRPBF replace IRF7484PbF in existing designs?
Yes - IRF7484TRPBF is the tape-and-reel packaging variant of IRF7484PbF, sharing identical electrical specifications, SO-8 footprint, and thermal characteristics. The "TR" suffix denotes reel packaging; no circuit or layout changes are needed for drop-in substitution.
IRF7484TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 7V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 14A, 7V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 7 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3520 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7484TRPBF FAQ
1.How can I place an order for IRF7484TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7484TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7484TRPBF reliable?
The price and inventory of IRF7484TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7484TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7484TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7484TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7484TRPBF?
IRF7484TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7484TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7484TRPBF?
For technical support, including IRF7484TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7484TRPBF requirements.
6.How does Aetrix verify that IRF7484TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7484TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7484TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7484TRPBF?
All IRF7484TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7484TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7484TRPBF part is unused and in its original packaging.
Return procedure for IRF7484TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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