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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7488PBF

Name: IRF7488PBF
Brand: Infineon Technologies
SKU: IRF7488PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7488PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7488PBF.pdf

Description:: MOSFET N-CH 80V 6.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,423

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Product details

Overview

IRF7488PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, rated for 80 V V_DS, 24–29 mΩ R_DS(on) at V_GS = 10 V, 38 nC total gate charge, and optimized for high-frequency DC-DC converters requiring low switching loss and robust avalanche capability.

For engineers reviewing the IRF7488PBF datasheet, IRF7488PBF pinout, IRF7488PBF application, or IRF7488PBF equivalent, key selection criteria include its 80 V breakdown voltage, 6.3 A continuous drain current at 25°C, low C_oss (270 pF at V_DS = 25 V), fully characterized avalanche energy (96 mJ), and SO-8 surface-mount thermal performance with R_θJA = 50 °C/W.

Technical Context

This MOSFET employs a planar silicon process with optimized cell geometry to achieve low R_DS(on) while maintaining fast switching via minimized Q_gd/Q_gs ratio (12 nC / 9.1 nC). Its body diode exhibits 1.3 V forward drop at 3.8 A and 65 ns reverse recovery time, enabling synchronous rectification in buck topologies.

The device features fully characterized effective output capacitance (C_oss,eff = 340 pF) across 0–64 V, supporting accurate snubberless design in hard-switched converters. Avalanche ratings are validated per JEDEC JESD24-11, with single-pulse E_AS = 96 mJ at I_AS = 3.8 A and T_J = 150°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports 48 V input bus designs with 20% margin against transients
R_DS(on)	24–29 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 6.3 A continuous operation
Q_g	38 nC - allows efficient drive with standard gate drivers (e.g., IR2110) at ≤1 MHz switching
C_oss,eff	340 pF - reduces turn-off energy loss and simplifies zero-voltage switching (ZVS) design
E_AS	96 mJ - withstands unclamped inductive switching events without failure in 12 V/48 V systems
R_θJA	50 °C/W - limits junction rise to ≤125°C at 1.6 W dissipation on standard 2-layer PCB

Pinout & Package

IRF7488PBF uses the industry-standard SO-8 (JEDEC MS-012AA) surface-mount package with exposed drain pad for enhanced thermal conduction. Pin 1 is Gate, Pins 2–4 and 6–8 are Drain (internally paralleled), Pin 5 is Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V to fully enhance; max ±20 V rating prevents ESD damage during handling
2–4, 6–8 (D)	Drain	High-side switch node; all pins internally connected to die drain metallization and exposed pad for thermal path
5 (S)	Source	Power return and reference for gate drive; connects to power ground plane to minimize switching loop inductance

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	31.6% (12 nC / 38 nC) - improves Miller immunity and enables stable operation with high dv/dt
Fully characterized C_oss vs. V_DS	270 pF @ 25 V, 170 pF @ 64 V - enables precise resonant timing and soft-switching analysis
Body diode trr & Q_rr	65 ns / 190 nC - supports synchronous rectification in buck converters up to 500 kHz
Avalanche-rated structure	96 mJ E_AS @ 3.8 A - eliminates need for external clamping in flyback or boost inductor designs

Applications

High-Frequency DC-DC Converters

Synchronous Buck Regulators

Use Scenario: 48 V-to-12 V isolated DC-DC module operating at 1 MHz with >92% efficiency.

IC Role / Device Role: Primary-side high-side switch in active-clamp forward topology.

Use Value: Low Q_g and C_oss,eff reduce switching losses by 35% vs. legacy 100 V MOSFETs, enabling smaller heatsinks.

Use Scenario: Point-of-load (POL) regulator on server motherboard delivering 25 A at 1.2 V.

IC Role / Device Role: High-side synchronous rectifier switch paired with low-R_DS(on) low-side FET.

Use Value: Body diode trr < 70 ns ensures clean commutation with minimal shoot-through risk at 600 kHz.

Industrial Motor Drives

LED Constant-Current Drivers

Use Scenario: 24 V BLDC gate driver stage controlling 3-phase inverter for fan/pump control.

IC Role / Device Role: Half-bridge high-side switch with integrated bootstrap gate drive support.

Use Value: 80 V V_DS provides 50% overvoltage margin against motor back-EMF spikes during deceleration.

Use Scenario: 36 V input constant-current LED driver for street lighting with PWM dimming.

IC Role / Device Role: Switching element in buck-boost LED controller IC feedback loop.

Use Value: R_DS(on) stability over temperature (±15% from −55°C to +150°C) maintains current regulation accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	TO-220 package, 55 V V_DS, 8 mΩ R_DS(on), higher Q_g (120 nC)	Requires heatsink; unsuitable for high-density SMT layouts	Select when board space permits discrete heatsinking and lower R_DS(on) outweighs switching loss penalty
SiR872DP	SO-8, 80 V V_DS, 3.2 mΩ R_DS(on), 52 nC Q_g, trench MOSFET	Higher gate charge increases driver stress; superior conduction efficiency at <3 A	Select for ultra-low conduction loss in low-duty-cycle, high-current pulse applications

Compared with STP80NF55-08 and SiR872DP, IRF7488PBF offers optimal balance of switching speed (38 nC), thermal resistance (50 °C/W), and ruggedness (96 mJ E_AS) for compact, high-frequency converter designs where layout density and transient robustness are critical.

Availability

IRF7488PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, synchronous buck regulators, and industrial motor drives requiring stable component supply and lead-free compliance.

Supply support for IRF7488PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7488PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies and motor control applications where low gate charge and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7488PBF supports 5.0 A continuous drain current at T_A = 70°C with V_GS = 10 V, based on its 1.6 W maximum power dissipation rating and 50 °C/W junction-to-ambient thermal resistance. This assumes adequate PCB copper area (≥1 in² 2 oz Cu) for heat spreading.

Does IRF7488PBF have a specified avalanche energy rating?

Yes - the device is rated for 96 mJ single-pulse avalanche energy (E_AS) at I_AS = 3.8 A and starting junction temperature of 25°C, verified per JEDEC JESD24-11 test conditions using unclamped inductive switching circuits.

Can IRF7488PBF be used in synchronous rectification mode?

Yes - its body diode has a forward voltage of 1.3 V at 3.8 A and reverse recovery time of 65 ns, making it suitable for synchronous rectification in buck converters up to 500 kHz, provided gate drive timing avoids cross-conduction.

What is the gate threshold voltage range?

The gate threshold voltage (V_GS(th)) is specified from 2.0 V to 4.0 V at I_D = 250 µA and V_DS = V_GS. This ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers when used with appropriate gate resistors to limit peak current.

IRF7488PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 6.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 29mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7488PBF FAQ

1.How can I place an order for IRF7488PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7488PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7488PBF reliable?

The price and inventory of IRF7488PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7488PBF is usually 5 days.

3.What payment methods are accepted for IRF7488PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7488PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7488PBF?

IRF7488PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7488PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7488PBF?

For technical support, including IRF7488PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7488PBF requirements.

6.How does Aetrix verify that IRF7488PBF is sourced from the original manufacturer or authorized distributors?

All IRF7488PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7488PBF meets industry standards.

7.What is the process for return or replacement of IRF7488PBF?

All IRF7488PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7488PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7488PBF part is unused and in its original packaging.

Return procedure for IRF7488PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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