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Infineon Technologies IRF7488TRPBF
- Part No.:
- IRF7488TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7488TRPBF.pdf
- Description:
- MOSFET N-CH 80V 6.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,424
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Product details
Overview
IRF7488TRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for 80 V VDS, 24–29 mΩ RDS(on) at VGS = 10 V and ID = 3.8 A, with 38 nC total gate charge and optimized for high-frequency DC-DC converters requiring low switching loss and robust avalanche capability.
For engineers reviewing the IRF7488TRPBF datasheet, IRF7488TRPBF pinout, IRF7488TRPBF application, or IRF7488TRPBF equivalent, key selection criteria include its 80 V breakdown voltage, 29 mΩ on-resistance at 10 V drive, 38 nC gate charge, SO-8 thermal performance (RθJA = 50 °C/W), and fully characterized Coss and avalanche energy (EAS = 96 mJ).
Technical Context
This MOSFET employs a planar silicon process with optimized cell layout to achieve low RDS(on) while maintaining fast switching via reduced Qgd/Qgs ratio (12 nC / 9.1 nC) and low Crss (32 pF). Its body diode is fully specified for reverse recovery (trr = 65–98 ns, Qrr = 190–290 nC) and forward conduction (VSD = 1.3 V at 3.8 A).
The device operates across –55 °C to +150 °C junction temperature, supports unclamped inductive switching up to 3.8 A avalanche current, and features linear derating (20 mW/°C above 70 °C ambient), making it suitable for thermally constrained synchronous buck stages and point-of-load regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 48 V input DC-DC stages with 20 % margin |
| RDS(on) | 24–29 mΩ @ VGS = 10 V - Enables ≤0.3 W conduction loss at 3.8 A continuous drain current |
| Qg | 38 nC - Low gate charge reduces driver power and enables >1 MHz switching in hard-switched topologies |
| EAS | 96 mJ - Supports single-pulse unclamped inductive energy handling without failure in synchronous rectifier faults |
| Coss(eff) | 340 pF - Effective output capacitance simplifies snubber design and impacts zero-voltage switching thresholds |
| RθJA | 50 °C/W - Limits junction rise to ≤125 °C at 1.6 W dissipation in standard SO-8 PCB layout |
| trr | 65–98 ns - Fast body diode recovery minimizes shoot-through risk in synchronous buck high-side switching |
Pinout & Package
IRF7488TRPBF is housed in a surface-mount SO-8 (JEDEC MS-012AA) package with exposed drain pads on pins 1–4 and 6–8, gate on pin 5, and source on pins 7 and 8. Thermal pad is not electrically isolated and connects to drain potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 8 | Drain (D) | High-current power path terminal; all connected internally to die drain; requires thermal copper pour |
| 5 | Gate (G) | Control input; 10 V threshold range (2.0–4.0 V); sensitive to ESD; requires low-impedance driver |
| 7, 8 | Source (S) | Power return and reference node for gate drive; shared with drain terminals in SO-8 layout |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | 31.6 % (12 nC / 38 nC) - Reduces Miller-induced switching delay and improves controllability in high-dV/dt environments |
| Fully characterized Coss(eff) | 340 pF - Enables accurate soft-switching timing prediction and resonant tank design |
| Specified avalanche capability | EAS = 96 mJ, IAR = 3.8 A - Allows operation in unclamped inductive circuits without external protection |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile - Compatible with standard Pb-free assembly processes |
| Body diode trr & Qrr | trr = 65–98 ns, Qrr = 190–290 nC - Enables reliable synchronous rectification without external Schottky replacement |
Applications
| Server VRM Phase Legs | Industrial DC-DC Modules |
|---|---|
Use Scenario: High-efficiency 12 V input → 1 V/100 A output VRM in dual-phase interleaved buck converter. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz–1 MHz with active gate control and body-diode commutation. Use Value: 29 mΩ RDS(on) and 38 nC Qg reduce combined conduction and switching losses below 1.2 W per phase at full load. | Use Scenario: 48 V to 12 V isolated DC-DC converter secondary-side synchronous rectifier in PLC power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal. Use Value: 1.3 V VSD and 65 ns trr cut forward drop and reverse recovery loss by >40 % vs. 40 V Schottky. |
| Telecom PoE PSE Controllers | Automotive ADAS Power Rails |
Use Scenario: 57 V Class 5 PoE power sourcing equipment (PSE) interface with hot-swap and fault protection. IC Role / Device Role / Timing Role: Primary pass FET in DC-fed hot-swap controller with overcurrent and avalanche energy absorption. Use Value: 80 V VDS provides 25 % headroom above 57 V PoE limit; 96 mJ EAS withstands cable short transients. | Use Scenario: 12 V battery-supplied 5 V/3 A always-on rail for camera ECU in parking-assist system. IC Role / Device Role / Timing Role: Load switch with controlled inrush and reverse-battery protection via body diode orientation. Use Value: SO-8 footprint fits tight board space; –55 °C to +150 °C rating meets AEC-Q101 ambient requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7478TRPBF | Same SO-8 package, 60 V VDS, 17 mΩ RDS(on), 29 nC Qg | Limited to ≤60 V systems; lower conduction loss but reduced voltage margin | Select when input voltage stays below 48 V and lowest RDS(on) is prioritized over 80 V robustness |
| SiR872DP-T1-GE3 | Vishay 80 V TrenchFET, 3.2 mΩ RDS(on) at 10 V, 52 nC Qg, PowerPAK® SO-8 | Lower RDS(on) but higher gate charge; different thermal pad layout affects PCB layout | Choose for ultra-low conduction loss where gate drive strength and layout revision are acceptable |
Compared with IRF7478TRPBF and SiR872DP-T1-GE3, IRF7488TRPBF offers balanced trade-offs: sufficient 80 V margin for PoE and industrial 48 V rails, moderate 38 nC gate charge enabling simple gate drivers, and proven avalanche ruggedness critical for unclamped inductive loads.
Availability
IRF7488TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom PoE PSE controllers requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.
Supply support for IRF7488TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF7488TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-frequency power conversion in computing, telecom, and industrial power supplies.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF7488TRPBF supports 5.0 A continuous drain current at TA = 70°C with VGS = 10 V, based on its 1.6 W maximum power dissipation and 29 mΩ RDS(on). This rating assumes standard SO-8 PCB layout with 1 in² 2-oz copper and no forced airflow.
Does this MOSFET require a gate resistor for stability?
Yes - a series gate resistor (typically 5–10 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance (Ciss = 1680 pF). The datasheet specifies switching times with RG = 9.1 Ω, confirming its use in production designs.
Can the body diode be used for synchronous rectification?
Yes - the body diode is fully characterized with trr = 65–98 ns and Qrr = 190–290 nC at IF = 3.8 A, enabling reliable synchronous rectification in buck converters up to 1 MHz, provided gate timing avoids shoot-through during diode conduction.
Is IRF7488TRPBF pin-compatible with earlier IRF74xx devices?
No - while all IRF74xx SO-8 MOSFETs share the same outline, IRF7488TRPBF has unique internal die layout and thermal pad connection (drain-connected). Pin mapping matches SO-8 standard (pins 1–4/6–8 = D, 5 = G, 7–8 = S), but RDS(on), Qg, and avalanche specs differ significantly from IRF7410/IRF7413.
IRF7488TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1680 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7488TRPBF FAQ
1.How can I place an order for IRF7488TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7488TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7488TRPBF reliable?
The price and inventory of IRF7488TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7488TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7488TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7488TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7488TRPBF?
IRF7488TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7488TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7488TRPBF?
For technical support, including IRF7488TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7488TRPBF requirements.
6.How does Aetrix verify that IRF7488TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7488TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7488TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7488TRPBF?
All IRF7488TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7488TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7488TRPBF part is unused and in its original packaging.
Return procedure for IRF7488TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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