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Infineon Technologies IRF7490PBF
- Part No.:
- IRF7490PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7490PBF.pdf
- Description:
- MOSFET N-CH 100V 5.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,574
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Product details
Overview
IRF7490PBF from Infineon Technologies is a 100 V, 33 mΩ N-channel HEXFET Power MOSFET in SO-8 package, rated for 5.4 A continuous drain current at 25°C and optimized for high-frequency DC-DC converters. It features 37 nC total gate charge, 250 pF effective output capacitance (Coss), and 91 mJ single-pulse avalanche energy - enabling robust switching in synchronous buck stages with low conduction and switching losses.
For engineers reviewing the IRF7490PBF datasheet, IRF7490PBF pinout, IRF7490PBF application, or IRF7490PBF equivalent, key selection criteria include RDS(on) stability over temperature, gate charge profile for PWM controller compatibility, body diode recovery performance (trr = 67 ns), and SO-8 thermal derating (20 mW/°C above 70°C).
Technical Context
This MOSFET employs planar silicon process technology with fully characterized dynamic parameters including Ciss = 1720 pF, Coss = 220 pF (VDS = 25 V), and Crss = 25 pF - supporting accurate snubberless flyback and resonant LLC design. Its gate threshold voltage (VGS(th)) ranges 2.0–4.0 V, ensuring reliable turn-on with standard 5 V or 10 V logic-level drivers.
The device integrates a co-packaged body diode with VSD = 1.3 V at IS = 3.2 A and Qrr = 220 nC, enabling use in synchronous rectification and freewheeling paths where reverse recovery behavior directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 48 V nominal bus with 2× safety margin for transient spikes in industrial DC-DC systems |
| RDS(on) max | 39 mΩ @ VGS = 10 V - delivers ≤210 mW conduction loss at 5.4 A, critical for thermally constrained SO-8 PCB layouts |
| Qg | 37 nC - enables <100 ns turn-on delay (td(on) = 13 ns) with 9.1 Ω gate resistor, suitable for 500 kHz–1 MHz switching |
| EAS | 91 mJ - withstands unclamped inductive switching events in motor gate drivers or hot-swap circuits without failure |
| Coss,eff | 250 pF - defines hard-switching energy loss (½ × C × V²) and influences ZVS transition feasibility in resonant topologies |
| trr | 67 ns - limits diode reverse recovery ringing and associated voltage overshoot during high-dI/dt freewheeling |
| TJ range | −55°C to +150°C - validated operation across automotive under-hood and industrial ambient conditions |
Pinout & Package
IRF7490PBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal dissipation. The package measures 4.9 mm × 6.0 mm × 1.75 mm and supports reflow soldering up to 300°C for 10 seconds.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, 6–8 (D) | Drain | Parallel-connected high-side switch node; requires copper pour and thermal vias for PD > 1.6 W at TA = 70°C |
| 5 (G) | Gate | High-impedance control input; 37 nC charge demands low-impedance driver to minimize tr/tf |
| 7–8 (S) | Source | Power return path and reference for gate drive; shared with body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low gate-to-drain charge (Qgd) | 10 nC - reduces Miller-induced shoot-through risk and improves controllability in half-bridge configurations |
| Fully characterized Coss vs. VDS | 130–1650 pF range - enables precise calculation of switching loss and snubber sizing across full operating voltage |
| Lead-free (PbF) construction | RoHS-compliant SO-8 package - meets IPC-J-STD-020 moisture sensitivity level 1 for unlimited floor life |
| Enhanced avalanche ruggedness | IAR = 3.2 A, EAS = 91 mJ - eliminates need for external clamping in inductive load switching applications |
Applications
| Server VRM Power Stage | Industrial PLC Output Driver |
|---|---|
Use Scenario: High-efficiency 12 V input → 1.2 V/60 A output buck converter in server CPU voltage regulator modules. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 600 kHz with 10 V gate drive and forced-air cooling. Use Value: 33 mΩ RDS(on) minimizes conduction loss while 37 nC Qg ensures fast transitions compatible with digital multiphase controllers. | Use Scenario: Solid-state relay replacement driving 24 V DC solenoids and indicator lamps in programmable logic controller outputs. IC Role / Device Role / Timing Role: Low-side load switch with integrated body diode handling inductive kickback during de-energization. Use Value: 91 mJ EAS rating absorbs stored inductor energy without external TVS, reducing BOM count and board space. |
| Telecom DC-DC Brick | Automotive Body Control Module |
Use Scenario: Isolated 48 V–12 V intermediate bus converter in telecom power supply bricks with strict EMI limits. IC Role / Device Role / Timing Role: Primary-side MOSFET in active-clamp forward topology, switching at 350 kHz with zero-voltage switching assist. Use Value: 250 pF Coss,eff enables predictable ZVS timing and reduces switching noise compared to higher-Coss alternatives. | Use Scenario: Window lift motor H-bridge half-bridge leg in automotive body control module with reverse-battery protection. IC Role / Device Role / Timing Role: N-channel high-side switch with bootstrap gate drive, managing bidirectional 15 A peak motor current. Use Value: −55°C to +150°C TJ range ensures reliability across cold-cranking and under-hood thermal extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 45 mΩ @ 10 V; Qg = 28 nC; VDS = 100 V | Lower gate charge reduces driver stress but higher on-resistance increases conduction loss at >4 A | Select when prioritizing fast switching over thermal headroom in low-current, high-frequency designs |
| SI7850DP-T1-GE3 | RDS(on) = 28 mΩ @ 10 V; Qg = 45 nC; SO-8 package; VDS = 100 V | Lower RDS(on) improves efficiency at high load, but higher Qg demands stronger gate driver | Select when optimizing for full-load efficiency in thermally limited 5–6 A applications |
Compared with IRF7470PBF and SI7850DP-T1-GE3, IRF7490PBF offers the best balance of RDS(on), Qg, and avalanche capability - making it preferred for mid-power DC-DC converters where both conduction loss and switching loss must be minimized simultaneously.
Availability
IRF7490PBF is available at Aetrix Electronics and suitable for server VRMs, industrial PLC outputs, telecom DC-DC bricks, and automotive body control modules requiring stable component supply and long-term manufacturability.
Supply support for IRF7490PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
The IRF7490PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in mid-power DC-DC conversion and motor control applications.
FAQ
What is the maximum continuous drain current at 100°C ambient temperature?
The IRF7490PBF does not specify continuous drain current at 100°C ambient in its Absolute Maximum Ratings table. Derating must be applied from the 4.3 A rating at 70°C using the 20 mW/°C linear derating factor. At TA = 100°C, maximum allowable power dissipation is 1.0 W, yielding ~4.5 A only if RDS(on) remains at 33 mΩ - but junction temperature must stay ≤150°C, requiring careful thermal design with PCB copper area and airflow.
Does the body diode support synchronous rectification in buck converters?
Yes - the integrated body diode has VSD = 1.3 V at 3.2 A and trr = 67 ns, enabling use as a freewheeling element. However, for true synchronous rectification, an external low-VF Schottky or second MOSFET is recommended due to the body diode's relatively high forward drop and recovery charge (Qrr = 220 nC), which increases switching loss and EMI.
Can IRF7490PBF be used in linear mode (constant-current source) applications?
No - the device is not characterized for safe linear-mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only, with no DC or long-pulse capability beyond 100 µs. For constant-current sources, discrete lateral MOSFETs or dedicated linear regulators with thermal foldback are required to prevent thermal runaway.
Is the SO-8 package lead (pin) finish matte tin or bright tin?
The IRF7490PBF SO-8 package uses matte tin (Sn) plating per Infineon's Pb-free specification, compliant with JEDEC J-STD-020 moisture sensitivity level 1 and RoHS Directive 2011/65/EU. Matte tin prevents whisker growth and provides stable solderability during reflow, with no post-reflow annealing required.
IRF7490PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 39mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1720 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7490PBF FAQ
1.How can I place an order for IRF7490PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7490PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7490PBF reliable?
The price and inventory of IRF7490PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7490PBF is usually 5 days.
3.What payment methods are accepted for IRF7490PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7490PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7490PBF?
IRF7490PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7490PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7490PBF?
For technical support, including IRF7490PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7490PBF requirements.
6.How does Aetrix verify that IRF7490PBF is sourced from the original manufacturer or authorized distributors?
All IRF7490PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7490PBF meets industry standards.
7.What is the process for return or replacement of IRF7490PBF?
All IRF7490PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7490PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7490PBF part is unused and in its original packaging.
Return procedure for IRF7490PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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