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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7492PBF

Name: IRF7492PBF
Brand: Infineon Technologies
SKU: IRF7492PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7492PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7492PBF.pdf

Description:: MOSFET N-CH 200V 3.7A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,523

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Product details

Overview

IRF7492PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 3.7 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 79 mΩ R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and fully characterized C_oss,eff = 150 pF to simplify snubberless flyback and resonant converter design.

For engineers reviewing the IRF7492PBF datasheet, IRF7492PBF pinout, IRF7492PBF application, or IRF7492PBF equivalent, key selection criteria include its low Q_gd/Q_g ratio (15/39 nC), avalanche-rated 130 mJ single-pulse energy, and SO-8 thermal resistance of 20 °C/W junction-to-drain - critical for compact, high-efficiency isolated power stages.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted drift region to achieve balanced conduction and switching loss trade-offs at 100–500 kHz operation. Its low 9.5 V/ns diode recovery dv/dt and 69 ns trr support fast synchronous rectification without excessive ringing in secondary-side switching.

The device integrates a robust body diode with V_SD = 1.3 V at I_S = 2.2 A and is fully specified for unclamped inductive switching (UIS) up to I_AS = 4.4 A, enabling reliable operation in hard-switched topologies where voltage overshoot is uncontrolled.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 160 V bus designs with 25% margin for transient overvoltage in telecom and industrial SMPS
R_DS(on) max	79 mΩ @ V_GS = 10 V - enables ≤1.2 W conduction loss at 3.7 A continuous drain current
Q_g	39 nC - determines gate drive power requirement and switching speed in 200–500 kHz converters
C_oss,eff	150 pF - defines output capacitance energy loss during turn-on; used directly in ZVS timing calculations
E_AS	130 mJ - specifies maximum single-pulse avalanche energy tolerance without failure under inductive fault conditions
R_θJL	20 °C/W - quantifies thermal path efficiency from junction to exposed drain pad; enables direct PCB copper heatsinking
trr / Q_rr	69 ns / 200 nC - sets minimum dead-time requirements and reverse recovery loss in synchronous rectifiers

Pinout & Package

IRF7492PBF uses the standard SO-8 surface-mount package (JEDEC MS-012AA) with exposed drain paddle for enhanced thermal performance. The 8-pin layout places all three drain terminals (pins 1, 2, 3) on one side, source terminals (pins 5, 6, 7, 8) on the opposite side, and gate (pin 4) centrally located for low-inductance routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 - D	Drain connection (parallel)	Three parallel pins reduce package inductance and distribute high-current return path across PCB
4 - G	Gate input	Single-point control node; requires <10 Ω series gate resistor to damp 15 ns turn-on delay and 13 ns rise time
5, 6, 7, 8 - S	Source return path	Four-source-pin configuration lowers source inductance and improves stability in high-di/dt switching

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	38% (15/39 nC) - reduces Miller-induced switching instability and enables cleaner gate drive waveforms
Fully characterized C_oss,eff	150 pF - eliminates iterative capacitor modeling; directly usable in resonant tank and soft-switching timing equations
Avalanche-rated	130 mJ E_AS - allows safe operation in non-clamped topologies like flyback without external snubbers
Lead-free SO-8 package	RoHS-compliant with 300 °C soldering tolerance - compatible with standard reflow profiles and automated assembly
Body diode trr	69 ns - enables use as synchronous rectifier in secondary-side DC-DC stages up to 300 kHz

Applications

Telecom DC-DC Brick

Industrial Isolated PSU

Use Scenario: 48 V input, 12 V/15 A output half-bridge DC-DC converter in 1U telecom shelf.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300 kHz with 50% duty cycle.

Use Value: 79 mΩ R_DS(on) and 39 nC Q_g enable >92% efficiency at full load while maintaining thermal rise <45 °C on 2 oz copper.

Use Scenario: 300 V bus, 24 V/5 A auxiliary supply in PLC backplane with wide ambient range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Active clamp flyback switch handling repetitive 200 V transients.

Use Value: 130 mJ E_AS rating ensures no degradation after 10⁶ cycles of 160 V/3.5 A UIS stress.

LED Driver Secondary Side

Automotive Body Control Module

Use Scenario: Synchronous rectifier in 24 V input, 5 V/3 A LED driver for commercial signage.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in forward converter.

Use Value: 1.3 V V_SD and 69 ns trr reduce conduction loss by 35% vs. 40 V Schottky, improving thermal margin at 85 °C ambient.

Use Scenario: 12 V input, 5 V/2 A isolated buck-boost for CAN transceiver power in BCM ECU.

IC Role / Device Role / Timing Role: High-frequency (400 kHz) primary switch in miniaturized transformer-coupled regulator.

Use Value: SO-8 package with 20 °C/W R_θJL allows direct thermal coupling to chassis ground, eliminating need for heatsink in space-constrained module.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, medium-current power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM20	200 V, 20 A, 0.12 Ω R_DS(on), TO-220 package	Higher current rating but larger footprint and 60 °C/W R_θJA; requires heatsink above 1.5 A	Prefer when board space allows discrete heatsinking and peak current exceeds 4 A
SiHFR120	200 V, 3.5 A, 85 mΩ R_DS(on), SO-8, 42 nC Q_g	Higher Q_g and slightly higher R_DS(on); identical pinout and thermal profile	Drop-in replacement if existing layout must be preserved and 5% efficiency loss is acceptable

Compared with STP20NM20 and SiHFR120, IRF7492PBF delivers superior thermal performance per unit area (20 °C/W vs. 60 °C/W or 25 °C/W), lower switching loss due to 39 nC Q_g, and tighter C_oss,eff characterization - making it optimal for compact, high-frequency, thermally constrained DC-DC modules.

Availability

IRF7492PBF is available at Aetrix Electronics and suitable for telecom DC-DC bricks, industrial isolated PSUs, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for IRF7492PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with vertical manufacturing capability.

The IRF7492PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency isolated power conversion in space-constrained applications such as telecom bricks and industrial PSUs.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7492PBF supports 3.0 A continuous drain current at T_A = 70°C with proper PCB copper area (1 inch² 2 oz Cu). This derating reflects its 2.5 W P_D rating and 50 °C/W R_θJA, not junction temperature limits - actual T_J remains within −55 to +150°C range under these conditions.

Can IRF7492PBF be used in zero-voltage switching (ZVS) topologies?

Yes - its fully characterized C_oss,eff = 150 pF and low Q_gd = 15 nC enable precise ZVS timing design in LLC resonant converters. The fixed effective output capacitance value eliminates iterative simulation, allowing direct calculation of resonant tank dead time and magnetizing inductance requirements.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode has t_rr = 69 ns and Q_rr = 200 nC at I_F = 2.2 A, di/dt = 100 A/µs. These values meet requirements for synchronous rectification in forward and active-clamp flyback converters operating up to 300 kHz, provided gate drive timing accounts for 10 ns recovery margin.

What is the recommended gate resistor value for 300 kHz operation?

A 6.5 Ω gate resistor is validated in the datasheet for 300 kHz switching with 15 ns t_d(on), 13 ns t_r, 27 ns t_d(off), and 14 ns t_f. This value balances switching speed against ringing suppression; reducing below 5 Ω increases EMI risk without meaningful efficiency gain due to Q_g-dominated losses.

IRF7492PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 79mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7492PBF FAQ

1.How can I place an order for IRF7492PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7492PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7492PBF reliable?

The price and inventory of IRF7492PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7492PBF is usually 5 days.

3.What payment methods are accepted for IRF7492PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7492PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7492PBF?

IRF7492PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7492PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7492PBF?

For technical support, including IRF7492PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7492PBF requirements.

6.How does Aetrix verify that IRF7492PBF is sourced from the original manufacturer or authorized distributors?

All IRF7492PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7492PBF meets industry standards.

7.What is the process for return or replacement of IRF7492PBF?

All IRF7492PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7492PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7492PBF part is unused and in its original packaging.

Return procedure for IRF7492PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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