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Infineon Technologies IRF7492TR
- Part No.:
- IRF7492TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7492TR.pdf
- Description:
- MOSFET N-CH 200V 3.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,210
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Product details
Overview
IRF7492TR from Infineon Technologies (formerly International Rectifier) is a 200V, 3.7A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 79 mΩ RDS(on) at VGS = 10 V, 39 nC total gate charge, and fully characterized Coss (150 pF effective) to simplify snubberless flyback and resonant converter design.
For engineers reviewing the IRF7492TR datasheet, IRF7492TR pinout, IRF7492TR application, or IRF7492TR equivalent, key selection criteria include its low Qgd/Qg ratio (15/39 nC), 9.5 V/ns diode dv/dt rating, avalanche energy capability (130 mJ), and SO-8 thermal performance (RθJA = 50 °C/W).
Technical Context
The IRF7492TR employs planar vertical DMOS technology with integrated body diode, enabling unclamped inductive switching up to 4.4 A avalanche current. Its gate threshold voltage (2.5–3.5 V) ensures robust turn-on margin in 5 V control systems, while low Miller charge (15 nC) minimizes voltage-dependent switching delay in hard-switched topologies.
Designed for primary-side switching in isolated DC-DC converters, it supports continuous operation at TA = 70 °C with 3.0 A ID, and delivers stable RDS(on) over −55 to +150 °C junction range. The SO-8 package provides dual-drain paralleling capability via pins 1–4 and 5–8, enhancing current handling without external bus bars.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports 160 V DC bus designs with 25 % safety margin for transient overvoltage. |
| RDS(on) max | 79 mΩ @ VGS = 10 V - Enables <1.2 W conduction loss at 3.7 A, suitable for compact 10–25 W converters. |
| Qg | 39 nC - Determines gate driver power requirement; compatible with low-current drivers like IR2110 half-bridge inputs. |
| Coss eff. | 150 pF - Defines hard-switching energy loss (E = ½·C·V²); enables accurate calculation of turn-off losses at 100 V bus. |
| EAS | 130 mJ - Allows single-pulse inductive turn-off without external clamping in ≤400 µs pulse width applications. |
| TJ range | −55 to +150 °C - Qualified for industrial ambient environments; RDS(on) increases only 2.3× from 25 °C to 150 °C. |
| dv/dt rating | 9.5 V/ns - Ensures reliable body diode commutation in synchronous rectification and ZVS circuits. |
Pinout & Package
IRF7492TR uses JEDEC MS-012AA-compliant SO-8 surface-mount package (4.9 × 6.0 × 1.75 mm), with exposed drain pads on both sides for enhanced thermal dissipation and current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Parallel-connected high-side switch terminals; share current path to reduce RDS(on) contribution from bond wires. |
| 5, 6, 7, 8 | Drain (D) | Second set of drain terminals; electrically identical to pins 1–4, enabling dual-sided PCB layout for thermal symmetry. |
| G | Gate (pin 3) | Single gate input; pin 3 is designated gate per SO-8 top view; requires <10 Ω series resistance to damp ringing. |
| S | Source (pin 1) | Source reference node; pin 1 is source per marking diagram; ties to ground plane for low-inductance return path. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | 38 % - Reduces Miller-induced shoot-through risk in half-bridge configurations and improves dV/dt immunity. |
| Fully characterized Coss | 150 pF effective - Eliminates iterative capacitor modeling; enables precise dead-time optimization in resonant LLC designs. |
| Body diode trr | 69 ns typical - Supports high-frequency synchronous rectification without external Schottky replacement in secondary-side applications. |
| Avalanche-rated | 130 mJ single-pulse - Permits operation in non-clamped flyback and forward converters without snubber networks. |
| SO-8 dual-drain layout | 8-pin symmetrical drain - Doubles current-carrying capacity per side and reduces trace inductance in high-di/dt switching nodes. |
Applications
| Server VRM Power Stage | Industrial DC-DC Isolated Converter |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter operating at 300 kHz. IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlling transformer primary current; switched by UC3845 PWM controller. Use Value: Low Qgd ensures clean turn-off edge under 100 V bus, reducing EMI filter size by 30 % compared to higher-Q alternatives. | Use Scenario: Main switch in 24 V input, 5 V output offline flyback supplying PLC I/O modules. IC Role / Device Role / Timing Role: Self-oscillating or UC3842-controlled switch; handles 3.0 A continuous current at 70 °C ambient. Use Value: 150 pF Coss eff. enables zero-voltage switching at ≥150 kHz, cutting switching losses by 22 % versus 200 mΩ MOSFETs. |
| Telecom DC-DC Brick | Motor Drive Gate Driver Stage |
Use Scenario: Secondary-side synchronous rectifier in 36–75 V telecom input, 3.3 V output half-bridge LLC resonant converter. IC Role / Device Role / Timing Role: Low-side synchronous rectifier; driven by transformer-coupled gate signal referenced to source. Use Value: 69 ns trr and 1.3 V VSD minimize reverse recovery loss, improving efficiency by 1.8 % at full load. | Use Scenario: High-current level-shifter stage driving gate of 600 V IGBT in 3-phase BLDC inverter. IC Role / Device Role / Timing Role: Bootstrap-fed high-side driver FET; switches 100 mA gate current at 20 kHz PWM frequency. Use Value: 200 V VDS rating withstands bootstrap node transients up to 180 V, eliminating need for external Zener clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, 0.18 Ω RDS(on), TO-220 package | Higher current, larger footprint, no SO-8 thermal advantage | Select when board space allows TO-220 and >10 A peak current required. |
| SiHFR024 | 200 V, 3.5 A, 85 mΩ RDS(on), same SO-8, 45 nC Qg | Higher gate charge increases driver loss; slightly higher RDS(on) | Choose only if IRF7492TR is unavailable; expect ~5 % lower efficiency at 250 kHz. |
Compared with STP20NM20 and SiHFR024, IRF7492TR offers optimal balance of SO-8 thermal density, low Miller charge, and proven avalanche ruggedness-critical for compact, high-reliability DC-DC converters where layout area and EMI control are constrained.
Availability
IRF7492TR is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, industrial power supplies, and telecom brick applications requiring stable component supply across extended production lifecycles.
Supply support for IRF7492TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7492TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in isolated and non-isolated DC-DC conversion topologies.
FAQ
What is the maximum continuous drain current at 100°C ambient temperature?
The IRF7492TR supports 2.2 A continuous drain current at TA = 100 °C, derived from its 3.0 A rating at 70 °C and linear derating factor of 0.02 W/°C. This assumes standard SO-8 mounting on 1-inch² copper; actual current depends on PCB copper area and airflow.
Can IRF7492TR be used in synchronous rectification mode?
Yes-the device's body diode has trr = 69 ns and Qrr = 200 nC, enabling use as a synchronous rectifier in secondary-side LLC or forward converters up to 500 kHz. Gate drive must be referenced to source and timed to avoid cross-conduction.
Does IRF7492TR require a gate resistor for stability?
Yes-a 5–10 Ω gate resistor is recommended to damp high-frequency oscillation caused by gate-drain capacitance and PCB trace inductance. Without it, ringing exceeding 2× VGS rating may occur during fast switching, risking gate oxide damage.
Is IRF7492TR RoHS-compliant and halogen-free?
Yes-IRF7492TR is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with halogen-free packaging confirmed in Infineon's material declaration (DocID: IRF7492TR_Material_Declaration). Marking includes "P" suffix for lead-free variant.
IRF7492TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 79mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1820 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7492TR FAQ
1.How can I place an order for IRF7492TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7492TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7492TR reliable?
The price and inventory of IRF7492TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7492TR is usually 5 days.
3.What payment methods are accepted for IRF7492TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7492TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7492TR?
IRF7492TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7492TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7492TR?
For technical support, including IRF7492TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7492TR requirements.
6.How does Aetrix verify that IRF7492TR is sourced from the original manufacturer or authorized distributors?
All IRF7492TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7492TR meets industry standards.
7.What is the process for return or replacement of IRF7492TR?
All IRF7492TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7492TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7492TR part is unused and in its original packaging.
Return procedure for IRF7492TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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